KR100626905B1 - 이온 에너지 감쇄 - Google Patents

이온 에너지 감쇄 Download PDF

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Publication number
KR100626905B1
KR100626905B1 KR1020007013869A KR20007013869A KR100626905B1 KR 100626905 B1 KR100626905 B1 KR 100626905B1 KR 1020007013869 A KR1020007013869 A KR 1020007013869A KR 20007013869 A KR20007013869 A KR 20007013869A KR 100626905 B1 KR100626905 B1 KR 100626905B1
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KR
South Korea
Prior art keywords
ring
ions
substrate
plasma
focus ring
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KR1020007013869A
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English (en)
Korean (ko)
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KR20010052640A (ko
Inventor
스티브 엘링거
조셉 페르난데스
Original Assignee
램 리서치 코포레이션
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Application granted granted Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
KR1020007013869A 1998-06-10 1999-06-10 이온 에너지 감쇄 Expired - Lifetime KR100626905B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/095,167 1998-06-10
US09/095,167 US6013984A (en) 1998-06-10 1998-06-10 Ion energy attenuation method by determining the required number of ion collisions

Publications (2)

Publication Number Publication Date
KR20010052640A KR20010052640A (ko) 2001-06-25
KR100626905B1 true KR100626905B1 (ko) 2006-09-20

Family

ID=22250357

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007013869A Expired - Lifetime KR100626905B1 (ko) 1998-06-10 1999-06-10 이온 에너지 감쇄

Country Status (7)

Country Link
US (1) US6013984A (enExample)
EP (1) EP1097253B1 (enExample)
JP (1) JP4933692B2 (enExample)
KR (1) KR100626905B1 (enExample)
AT (1) ATE230810T1 (enExample)
DE (1) DE69904826T2 (enExample)
WO (1) WO1999064644A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12387911B2 (en) 2020-12-03 2025-08-12 Psk Inc. Support unit, apparatus for treating substrate, and method for treating substrate

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
US7252738B2 (en) * 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US20080289766A1 (en) * 2007-05-22 2008-11-27 Samsung Austin Semiconductor Lp Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup
WO2010062345A2 (en) * 2008-10-31 2010-06-03 Lam Research Corporation Lower electrode assembly of plasma processing chamber
KR20120116923A (ko) * 2009-11-30 2012-10-23 램 리써치 코포레이션 각진 측벽을 가진 정전 척
DE202010015933U1 (de) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
US9997381B2 (en) 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
US10804081B2 (en) 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
JP2016134572A (ja) * 2015-01-21 2016-07-25 ルネサスエレクトロニクス株式会社 半導体製造装置およびその管理方法、並びに半導体装置の製造方法
KR20250002784A (ko) * 2017-12-15 2025-01-07 램 리써치 코포레이션 플라즈마 챔버에서 사용하기 위한 링 구조체들 및 시스템들
JP2020140983A (ja) 2019-02-26 2020-09-03 キオクシア株式会社 半導体製造装置
GB202012560D0 (en) * 2020-08-12 2020-09-23 Spts Technologies Ltd Apparatus and method
JP2024514105A (ja) * 2021-04-07 2024-03-28 ラム リサーチ コーポレーション プラズマシース特性を制御するためのシステムおよび方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132623A (ja) * 1983-01-20 1984-07-30 Ulvac Corp ドライエツチング用電極
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5298720A (en) * 1990-04-25 1994-03-29 International Business Machines Corporation Method and apparatus for contamination control in processing apparatus containing voltage driven electrode
US5620525A (en) * 1990-07-16 1997-04-15 Novellus Systems, Inc. Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
JPH06188108A (ja) * 1992-12-21 1994-07-08 Canon Inc 薄膜抵抗器の製造方法、成膜装置用防着板及び成膜装置
GB9317170D0 (en) * 1993-08-18 1993-10-06 Applied Vision Ltd Improvements in physical vapour deposition apparatus
US5606485A (en) * 1994-07-18 1997-02-25 Applied Materials, Inc. Electrostatic chuck having improved erosion resistance
US5572398A (en) * 1994-11-14 1996-11-05 Hewlett-Packard Co. Tri-polar electrostatic chuck
US5740009A (en) * 1996-11-29 1998-04-14 Applied Materials, Inc. Apparatus for improving wafer and chuck edge protection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12387911B2 (en) 2020-12-03 2025-08-12 Psk Inc. Support unit, apparatus for treating substrate, and method for treating substrate

Also Published As

Publication number Publication date
KR20010052640A (ko) 2001-06-25
ATE230810T1 (de) 2003-01-15
EP1097253B1 (en) 2003-01-08
US6013984A (en) 2000-01-11
EP1097253A1 (en) 2001-05-09
JP2002517913A (ja) 2002-06-18
DE69904826D1 (de) 2003-02-13
JP4933692B2 (ja) 2012-05-16
DE69904826T2 (de) 2003-11-06
WO1999064644A1 (en) 1999-12-16

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