ATE230810T1 - Ionenergiedämpfung - Google Patents

Ionenergiedämpfung

Info

Publication number
ATE230810T1
ATE230810T1 AT99928567T AT99928567T ATE230810T1 AT E230810 T1 ATE230810 T1 AT E230810T1 AT 99928567 T AT99928567 T AT 99928567T AT 99928567 T AT99928567 T AT 99928567T AT E230810 T1 ATE230810 T1 AT E230810T1
Authority
AT
Austria
Prior art keywords
ion energy
energy damping
location
combine
accomplished
Prior art date
Application number
AT99928567T
Other languages
German (de)
English (en)
Inventor
Steve Ellinger
Joseph Fernandez
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE230810T1 publication Critical patent/ATE230810T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
AT99928567T 1998-06-10 1999-06-10 Ionenergiedämpfung ATE230810T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/095,167 US6013984A (en) 1998-06-10 1998-06-10 Ion energy attenuation method by determining the required number of ion collisions
PCT/US1999/013168 WO1999064644A1 (en) 1998-06-10 1999-06-10 Ion energy attenuation

Publications (1)

Publication Number Publication Date
ATE230810T1 true ATE230810T1 (de) 2003-01-15

Family

ID=22250357

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99928567T ATE230810T1 (de) 1998-06-10 1999-06-10 Ionenergiedämpfung

Country Status (7)

Country Link
US (1) US6013984A (enExample)
EP (1) EP1097253B1 (enExample)
JP (1) JP4933692B2 (enExample)
KR (1) KR100626905B1 (enExample)
AT (1) ATE230810T1 (enExample)
DE (1) DE69904826T2 (enExample)
WO (1) WO1999064644A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
US7252738B2 (en) * 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US20080289766A1 (en) * 2007-05-22 2008-11-27 Samsung Austin Semiconductor Lp Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup
WO2010062345A2 (en) * 2008-10-31 2010-06-03 Lam Research Corporation Lower electrode assembly of plasma processing chamber
KR20120116923A (ko) * 2009-11-30 2012-10-23 램 리써치 코포레이션 각진 측벽을 가진 정전 척
DE202010015933U1 (de) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
US9997381B2 (en) 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
US10804081B2 (en) 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
JP2016134572A (ja) * 2015-01-21 2016-07-25 ルネサスエレクトロニクス株式会社 半導体製造装置およびその管理方法、並びに半導体装置の製造方法
KR20250002784A (ko) * 2017-12-15 2025-01-07 램 리써치 코포레이션 플라즈마 챔버에서 사용하기 위한 링 구조체들 및 시스템들
JP2020140983A (ja) 2019-02-26 2020-09-03 キオクシア株式会社 半導体製造装置
GB202012560D0 (en) * 2020-08-12 2020-09-23 Spts Technologies Ltd Apparatus and method
KR102327270B1 (ko) 2020-12-03 2021-11-17 피에스케이 주식회사 지지 유닛, 기판 처리 장치, 그리고 기판 처리 방법
JP2024514105A (ja) * 2021-04-07 2024-03-28 ラム リサーチ コーポレーション プラズマシース特性を制御するためのシステムおよび方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132623A (ja) * 1983-01-20 1984-07-30 Ulvac Corp ドライエツチング用電極
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5298720A (en) * 1990-04-25 1994-03-29 International Business Machines Corporation Method and apparatus for contamination control in processing apparatus containing voltage driven electrode
US5620525A (en) * 1990-07-16 1997-04-15 Novellus Systems, Inc. Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
JPH06188108A (ja) * 1992-12-21 1994-07-08 Canon Inc 薄膜抵抗器の製造方法、成膜装置用防着板及び成膜装置
GB9317170D0 (en) * 1993-08-18 1993-10-06 Applied Vision Ltd Improvements in physical vapour deposition apparatus
US5606485A (en) * 1994-07-18 1997-02-25 Applied Materials, Inc. Electrostatic chuck having improved erosion resistance
US5572398A (en) * 1994-11-14 1996-11-05 Hewlett-Packard Co. Tri-polar electrostatic chuck
US5740009A (en) * 1996-11-29 1998-04-14 Applied Materials, Inc. Apparatus for improving wafer and chuck edge protection

Also Published As

Publication number Publication date
KR20010052640A (ko) 2001-06-25
EP1097253B1 (en) 2003-01-08
US6013984A (en) 2000-01-11
EP1097253A1 (en) 2001-05-09
JP2002517913A (ja) 2002-06-18
DE69904826D1 (de) 2003-02-13
JP4933692B2 (ja) 2012-05-16
DE69904826T2 (de) 2003-11-06
KR100626905B1 (ko) 2006-09-20
WO1999064644A1 (en) 1999-12-16

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Legal Events

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