KR100626192B1 - 전자계 공급 장치 및 플라즈마 처리 장치 - Google Patents

전자계 공급 장치 및 플라즈마 처리 장치 Download PDF

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Publication number
KR100626192B1
KR100626192B1 KR1020047004256A KR20047004256A KR100626192B1 KR 100626192 B1 KR100626192 B1 KR 100626192B1 KR 1020047004256 A KR1020047004256 A KR 1020047004256A KR 20047004256 A KR20047004256 A KR 20047004256A KR 100626192 B1 KR100626192 B1 KR 100626192B1
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KR
South Korea
Prior art keywords
conductor plate
waveguide
bump
opening
electromagnetic field
Prior art date
Application number
KR1020047004256A
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English (en)
Korean (ko)
Other versions
KR20040047850A (ko
Inventor
야스요시 야사카
마코토 안도
이시이노부오
시노하라기바츠
Original Assignee
동경 엘렉트론 주식회사
마코토 안도
야스요시 야사카
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001297801A external-priority patent/JP4499323B2/ja
Priority claimed from JP2001300416A external-priority patent/JP4481538B2/ja
Application filed by 동경 엘렉트론 주식회사, 마코토 안도, 야스요시 야사카 filed Critical 동경 엘렉트론 주식회사
Publication of KR20040047850A publication Critical patent/KR20040047850A/ko
Application granted granted Critical
Publication of KR100626192B1 publication Critical patent/KR100626192B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/02—Coupling devices of the waveguide type with invariable factor of coupling

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020047004256A 2001-09-27 2002-09-04 전자계 공급 장치 및 플라즈마 처리 장치 KR100626192B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001297801A JP4499323B2 (ja) 2001-09-27 2001-09-27 電磁界供給装置およびプラズマ処理装置
JPJP-P-2001-00297801 2001-09-27
JP2001300416A JP4481538B2 (ja) 2001-09-28 2001-09-28 電磁界供給装置およびプラズマ処理装置
JPJP-P-2001-00300416 2001-09-28
PCT/JP2002/008978 WO2003030236A1 (fr) 2001-09-27 2002-09-04 Dispositif d'alimentation de champ electromagnetique et dispositif de traitement au plasma

Publications (2)

Publication Number Publication Date
KR20040047850A KR20040047850A (ko) 2004-06-05
KR100626192B1 true KR100626192B1 (ko) 2006-09-21

Family

ID=26623128

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047004256A KR100626192B1 (ko) 2001-09-27 2002-09-04 전자계 공급 장치 및 플라즈마 처리 장치

Country Status (5)

Country Link
US (1) US20040244693A1 (zh)
KR (1) KR100626192B1 (zh)
CN (1) CN100573827C (zh)
TW (1) TWI300315B (zh)
WO (1) WO2003030236A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8136479B2 (en) * 2004-03-19 2012-03-20 Sharp Kabushiki Kaisha Plasma treatment apparatus and plasma treatment method
JP4852997B2 (ja) * 2005-11-25 2012-01-11 東京エレクトロン株式会社 マイクロ波導入装置及びプラズマ処理装置
TW200913799A (en) * 2007-06-11 2009-03-16 Tokyo Electron Ltd Plasma processing system, power supply system, and use of plasma processing system
JP5376816B2 (ja) * 2008-03-14 2013-12-25 東京エレクトロン株式会社 マイクロ波導入機構、マイクロ波プラズマ源およびマイクロ波プラズマ処理装置
SG183056A1 (en) * 2008-03-26 2012-08-30 Kyosan Electric Mfg Abnormal discharge suppressing device for vacuum apparatus
JP2010050046A (ja) * 2008-08-25 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置
KR101029557B1 (ko) * 2008-11-05 2011-04-15 주식회사 아토 플라즈마 발생 장치 및 플라즈마 처리 장치
KR101069384B1 (ko) * 2008-11-14 2011-09-30 세메스 주식회사 플라즈마 안테나 및 이를 포함하는 플라즈마 처리 장치
DE102009044496B4 (de) * 2009-11-11 2023-11-02 Muegge Gmbh Vorrichtung zur Erzeugung von Plasma mittels Mikrowellen
KR101037683B1 (ko) * 2010-11-30 2011-05-27 한정수 하수도 악취 누출 방지 장치
JP2015018687A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
JP2015018686A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
JP5850581B2 (ja) * 2013-11-29 2016-02-03 株式会社京三製作所 プラズマ未着火状態判別装置およびプラズマ未着火判別方法
FR3049393B1 (fr) * 2016-03-24 2020-05-08 Centre National D'etudes Spatiales C N E S Procede d'alimentation d'un guide d'onde radial et dispositif a guide d'onde radial
WO2021220329A1 (ja) * 2020-04-27 2021-11-04 株式会社日立ハイテク プラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5024716A (en) * 1988-01-20 1991-06-18 Canon Kabushiki Kaisha Plasma processing apparatus for etching, ashing and film-formation
US5173641A (en) * 1990-09-14 1992-12-22 Tokyo Electron Limited Plasma generating apparatus
JP3224105B2 (ja) * 1992-03-13 2001-10-29 株式会社日立製作所 プラズマプロセス装置
JPH11260594A (ja) * 1998-03-12 1999-09-24 Hitachi Ltd プラズマ処理装置
JP2000299198A (ja) * 1999-02-10 2000-10-24 Tokyo Electron Ltd プラズマ処理装置
TW492040B (en) * 2000-02-14 2002-06-21 Tokyo Electron Ltd Device and method for coupling two circuit components which have different impedances
EP1276356B1 (en) * 2000-03-30 2007-08-15 Tokyo Electron Limited Apparatus for plasma processing

Also Published As

Publication number Publication date
CN100573827C (zh) 2009-12-23
TWI300315B (zh) 2008-08-21
WO2003030236A1 (fr) 2003-04-10
KR20040047850A (ko) 2004-06-05
CN1550035A (zh) 2004-11-24
US20040244693A1 (en) 2004-12-09

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