JP2019106290A - アンテナ及びプラズマ成膜装置 - Google Patents
アンテナ及びプラズマ成膜装置 Download PDFInfo
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/26—Supports; Mounting means by structural association with other equipment or articles with electric discharge tube
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Abstract
Description
まず、本発明の一実施形態に係るプラズマ成膜装置100の一例について、図1を参照して説明する。図1は、本発明の一実施形態に係るプラズマ成膜装置100の一例を示す概略断面図である。プラズマ成膜装置100は、処理容器1と、載置台2と、ガスシャワーヘッド3と、アンテナ4と、制御部5とを有している。
アンテナ4の構成について、図1及び図2を参照しながら詳述する。図2に示すように、第1給電部6の先端部47cはリング状に形成されている。そして、図1に示すように、第2給電部7の同軸導波管43は、第1給電部6の先端部47cを貫通する。
次に、本実施形態の変形例1に係るプラズマ成膜装置100の一例について、図3を参照しながら説明する。図3は、本実施形態の変形例1に係るプラズマ成膜装置100の一例を示す概略断面図である。
次に、本実施形態の変形例2に係るプラズマ成膜装置100の一例について、図4を参照しながら説明する。図4は、実施形態の変形例2に係るプラズマ成膜装置100の一例を示す概略断面図である。
1 処理容器
2 載置台
3 ガスシャワーヘッド
4 アンテナ
5 制御部
6 第1給電部
7 第2給電部
12 シャワープレート
15 環状部材
16 カバー部材
17 金属部材
8 排気部
30 VHF供給部
32、34 高周波電源
35 ガス供給部
37 ガス供給路
41、42、49 金属反射板
43 同軸導波管
43a 内側導体
43b 外側導体
47 給電棒
U 処理空間
Claims (11)
- VHFの高周波電力を給電する第1給電部と、
前記第1給電部を介して前記VHFの高周波電力を給電する第2給電部と、
を有し、
前記第2給電部は、
側方にて前記第1給電部の先端部に接続され、
前記第1給電部の先端部の上方及び下方にて、λg/4+λg×n/2(λg:VHFの電磁波の管内波長、n:0以上の整数)の間隔で一対の金属反射板を有する、
アンテナ。 - 前記第2給電部は、前記一対の金属反射板の間でVHFの電磁波を共鳴させる、
請求項1に記載のアンテナ。 - 前記第1給電部の先端部及び前記一対の金属反射板は、リング状に形成され、
前記第2給電部に設けられた同軸導波管は、前記第1給電部の先端部及び前記一対の金属反射板を貫通する、
請求項1又は2に記載のアンテナ。 - 前記一対の金属反射板の間には、誘電体及び空間の少なくともいずれかが形成される、
請求項1〜3のいずれか一項に記載のアンテナ。 - 前記一対の金属反射板のうちの下方の金属反射板の側方に形成された空間の径方向の幅は、該下方の金属反射板の上方に形成された空間の径方向の幅よりも狭い、
請求項4に記載のアンテナ。 - 前記第2給電部は、内側導体と外側導体が同心円状に形成された同軸導波管を有し、
前記外側導体に前記第1給電部を介してVHFの電磁波を伝搬させ、
前記内側導体にLF及びHFの少なくともいずれかの高周波を伝搬させる、
請求項1〜5のいずれか一項に記載のアンテナ。 - 前記第2給電部は、円筒状の導体が形成された同軸導波管を有し、
前記導体に前記第1給電部を介してVHFの電磁波を伝搬させ、
前記導体の内部にガスを通す、
請求項1〜5のいずれか一項に記載のアンテナ。 - 前記第2給電部は、内側導体と外側導体が同心円状に形成された同軸導波管を有し、
前記外側導体に前記第1給電部を介してVHFの電磁波を伝搬させ、
前記内側導体に前記VHFの電磁波を出力するVHF供給部とは別のVHF供給部が出力するVHFの電磁波を伝搬させる、
請求項1〜5のいずれか一項に記載のアンテナ。 - 前記内側導体の内部にガスを通す、
請求項6又は8に記載のアンテナ。 - VHFの高周波電力を給電するアンテナと、前記アンテナから給電したVHFの高周波電力を用いてガスからプラズマを生成し、成膜処理を施す処理容器と、を有するプラズマ成膜装置であって、
前記アンテナは、
VHFの高周波電力を給電する第1給電部と、
前記第1給電部を介して前記VHFの高周波電力を給電する第2給電部と、
を有し、
前記第2給電部は、
側方にて前記第1給電部の先端部に接続され、
前記第1給電部の先端部の上方及び下方にて、λg/4+λg×n/2(λg:VHFの電磁波の管内波長、n:0以上の整数)の間隔で一対の金属反射板を有する、
プラズマ成膜装置。 - 前記処理容器の天井部にガスシャワーヘッドを有し、
前記第2給電部は、前記ガスシャワーヘッドに接続されている、
請求項10に記載のプラズマ成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2017237917A JP7026498B2 (ja) | 2017-12-12 | 2017-12-12 | アンテナ及びプラズマ成膜装置 |
US16/213,042 US10991549B2 (en) | 2017-12-12 | 2018-12-07 | Antenna and plasma deposition apparatus |
KR1020180156503A KR102124710B1 (ko) | 2017-12-12 | 2018-12-07 | 안테나 및 플라즈마 성막 장치 |
CN201811516404.0A CN110021514B (zh) | 2017-12-12 | 2018-12-12 | 天线和等离子体成膜装置 |
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JP2017237917A JP7026498B2 (ja) | 2017-12-12 | 2017-12-12 | アンテナ及びプラズマ成膜装置 |
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JP2019106290A true JP2019106290A (ja) | 2019-06-27 |
JP7026498B2 JP7026498B2 (ja) | 2022-02-28 |
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US (1) | US10991549B2 (ja) |
JP (1) | JP7026498B2 (ja) |
KR (1) | KR102124710B1 (ja) |
CN (1) | CN110021514B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022138130A1 (ja) * | 2020-12-21 | 2022-06-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
WO2023145546A1 (ja) * | 2022-01-25 | 2023-08-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP7450475B2 (ja) | 2020-06-30 | 2024-03-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2021158450A1 (en) * | 2020-02-04 | 2021-08-12 | Lam Research Corporation | Optimization of radiofrequency signal ground return in plasma processing system |
US11817630B2 (en) | 2021-09-17 | 2023-11-14 | City University Of Hong Kong | Substrate integrated waveguide-fed Fabry-Perot cavity filtering wideband millimeter wave antenna |
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JP2001351900A (ja) * | 2000-06-07 | 2001-12-21 | Sharp Corp | プラズマ処理装置 |
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JP2012216525A (ja) | 2011-03-31 | 2012-11-08 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ発生用アンテナ |
KR20140102757A (ko) * | 2012-02-17 | 2014-08-22 | 도호쿠 다이가쿠 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
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- 2017-12-12 JP JP2017237917A patent/JP7026498B2/ja active Active
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2018
- 2018-12-07 KR KR1020180156503A patent/KR102124710B1/ko active IP Right Grant
- 2018-12-07 US US16/213,042 patent/US10991549B2/en active Active
- 2018-12-12 CN CN201811516404.0A patent/CN110021514B/zh active Active
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JPH03287774A (ja) * | 1990-04-02 | 1991-12-18 | Fuji Electric Co Ltd | プラズマ処理方法 |
JP2001351900A (ja) * | 2000-06-07 | 2001-12-21 | Sharp Corp | プラズマ処理装置 |
JP2005051102A (ja) * | 2003-07-30 | 2005-02-24 | Masayoshi Murata | 高周波プラズマ発生用電極と、該電極により構成されたプラズマ表面処理装置およびプラズマ表面処理方法 |
JP2006210929A (ja) * | 2005-01-28 | 2006-08-10 | Applied Materials Inc | 低アーク放電性、円筒形ガスアウトレット及び成形表面を有するプラズマリアクタ・オーバーヘッド・ソースパワー電極 |
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WO2013124906A1 (ja) * | 2012-02-24 | 2013-08-29 | 国立大学法人東北大学 | プラズマ処理装置およびプラズマ処理方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7450475B2 (ja) | 2020-06-30 | 2024-03-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
WO2022138130A1 (ja) * | 2020-12-21 | 2022-06-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
WO2023145546A1 (ja) * | 2022-01-25 | 2023-08-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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Publication number | Publication date |
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CN110021514B (zh) | 2021-06-01 |
US20190180984A1 (en) | 2019-06-13 |
KR102124710B1 (ko) | 2020-06-18 |
JP7026498B2 (ja) | 2022-02-28 |
US10991549B2 (en) | 2021-04-27 |
CN110021514A (zh) | 2019-07-16 |
KR20190070283A (ko) | 2019-06-20 |
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