KR100615477B1 - 일렉트로루미네선스 장치 및 전자 기기 - Google Patents
일렉트로루미네선스 장치 및 전자 기기 Download PDFInfo
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- KR100615477B1 KR100615477B1 KR1020030059743A KR20030059743A KR100615477B1 KR 100615477 B1 KR100615477 B1 KR 100615477B1 KR 1020030059743 A KR1020030059743 A KR 1020030059743A KR 20030059743 A KR20030059743 A KR 20030059743A KR 100615477 B1 KR100615477 B1 KR 100615477B1
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- 238000005401 electroluminescence Methods 0.000 title claims 6
- 230000004888 barrier function Effects 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 19
- 229910052809 inorganic oxide Inorganic materials 0.000 claims abstract description 15
- 150000002484 inorganic compounds Chemical class 0.000 claims abstract description 12
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- 239000010410 layer Substances 0.000 claims description 153
- 239000000758 substrate Substances 0.000 claims description 24
- 239000011241 protective layer Substances 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 150000003377 silicon compounds Chemical class 0.000 claims description 12
- 239000012790 adhesive layer Substances 0.000 claims description 10
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- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
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- 239000000463 material Substances 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
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- 238000004544 sputter deposition Methods 0.000 description 3
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- 238000007789 sealing Methods 0.000 description 2
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- 238000007740 vapor deposition Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
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- -1 Polyethylene terephthalate Polymers 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80521—Cathodes characterised by their shape
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (21)
- 기판 위에 설치된 실리콘 화합물로 이루어지는 절연층과,상기 절연층 위에 형성된 복수의 제1 전극과,복수의 일렉트로루미네선스층과,상기 복수의 일렉트로루미네선스층 사이를 절연하는 절연체와,상기 복수의 일렉트로루미네선스층 및 상기 절연체를 덮도록 설치된 제2 전극과,상기 제2 전극에 직접 접촉하여 설치된 실리콘 화합물로 이루어지는 배리어층을 갖고,상기 복수의 일렉트로루미네선스층의 각각은 상기 복수의 제1 전극의 각각의 위에 설치되어 있고,상기 제2 전극은 상기 일렉트로루미네선스층 및 상기 절연체의 상방을 덮는 상면부와, 이 상면부로부터 상기 절연층에 도달하는 측면부와, 상기 절연층에 접하고 있고 이 측면부로부터 기판 외주 방향으로 연장하는 플랜지부를 갖고,상기 배리어층은 상기 제2 전극의 상면부에 접촉하는 상면 배리어부와, 상기 제2 전극의 측면부에 접촉하는 측면 배리어부와, 상기 제2 전극의 플랜지부에 접촉하는 플랜지 배리어부를 갖고,상기 복수의 일렉트로루미네선스층 및 상기 절연체가 형성되어 있지 않은 주위 영역에서, 상기 제2 전극은 상기 절연층에 접하고 있고,상기 제2 전극의 상기 배리어층측의 면은 무기 산화물로 형성되어 이루어지고,상기 배리어층의 상기 제2 전극측의 면은 무기 화합물로 형성되어 이루어지는 일렉트로루미네선스 장치.
- 제 1 항에 있어서,상기 제 2 전극은 인듐 주석 산화물 또는 인듐 아연 산화물로 형성되어 이루어지는 일렉트로루미네선스 장치.
- 삭제
- 제 1 항 또는 제 2 항에 있어서,상기 배리어층은 실리콘 화합물로 형성된 적어도 1층으로 이루어지는 일렉트로루미네선스 장치.
- 제 4 항에 있어서,상기 배리어층은 상기 제 2 전극에 접촉하는 실리콘 산화물로 이루어지는 층을 갖는 일렉트로루미네선스 장치.
- 제 4 항에 있어서,상기 배리어층은 상기 제 2 전극에 접촉하는 실리콘 질화물로 이루어지는 층을 갖는 일렉트로루미네선스 장치.
- 제 4 항에 있어서,상기 배리어층은 상기 제 2 전극에 접촉하는 실리콘 질산화물로 이루어지는 층을 갖는 일렉트로루미네선스 장치.
- 삭제
- 제 1 항 또는 제 2 항에 있어서,상기 배리어층을 덮는 보호층을 더 갖는 일렉트로루미네선스 장치.
- 제 9 항에 있어서,상기 배리어층과 상기 보호층 사이에 배치된 접착층을 더 갖는 일렉트로루미네선스 장치.
- 제 10 항에 있어서,상기 접착층은 상기 보호층보다도 유연한 재료로 형성되어 이루어지는 일렉트로루미네선스 장치.
- 제 1 항 또는 제 2 항에 기재된 일렉트로루미네선스 장치를 갖는 전자 기기.
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00250774 | 2002-08-29 | ||
JP2002250774A JP3729262B2 (ja) | 2002-08-29 | 2002-08-29 | エレクトロルミネセンス装置及び電子機器 |
Publications (2)
Publication Number | Publication Date |
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KR20040019969A KR20040019969A (ko) | 2004-03-06 |
KR100615477B1 true KR100615477B1 (ko) | 2006-08-25 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020030059743A KR100615477B1 (ko) | 2002-08-29 | 2003-08-28 | 일렉트로루미네선스 장치 및 전자 기기 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7508128B2 (ko) |
JP (1) | JP3729262B2 (ko) |
KR (1) | KR100615477B1 (ko) |
CN (1) | CN100416890C (ko) |
TW (1) | TWI288576B (ko) |
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JP4561201B2 (ja) | 2003-09-04 | 2010-10-13 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、及び電子機器 |
US7492090B2 (en) * | 2003-09-19 | 2009-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
JP4479381B2 (ja) | 2003-09-24 | 2010-06-09 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、及び電子機器 |
US7205716B2 (en) * | 2003-10-20 | 2007-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
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JP4600254B2 (ja) * | 2005-11-22 | 2010-12-15 | セイコーエプソン株式会社 | 発光装置および電子機器 |
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KR101274801B1 (ko) * | 2006-06-27 | 2013-06-13 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
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JP4543336B2 (ja) * | 2007-05-01 | 2010-09-15 | ソニー株式会社 | 表示装置の製造方法 |
WO2013111218A1 (ja) * | 2012-01-23 | 2013-08-01 | 株式会社アルバック | 素子構造体及び素子構造体の製造方法 |
FR2999018B1 (fr) * | 2012-11-30 | 2016-01-22 | Commissariat Energie Atomique | Ecran d'affichage a diodes electroluminescentes organiques |
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2002
- 2002-08-29 JP JP2002250774A patent/JP3729262B2/ja not_active Expired - Lifetime
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2003
- 2003-08-20 US US10/644,573 patent/US7508128B2/en not_active Expired - Lifetime
- 2003-08-22 TW TW092123221A patent/TWI288576B/zh not_active IP Right Cessation
- 2003-08-27 CN CNB031553435A patent/CN100416890C/zh not_active Expired - Lifetime
- 2003-08-28 KR KR1020030059743A patent/KR100615477B1/ko active IP Right Grant
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Also Published As
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TW200405757A (en) | 2004-04-01 |
CN1489424A (zh) | 2004-04-14 |
KR20040019969A (ko) | 2004-03-06 |
US20090179564A1 (en) | 2009-07-16 |
US7508128B2 (en) | 2009-03-24 |
US20040066137A1 (en) | 2004-04-08 |
US8648528B2 (en) | 2014-02-11 |
JP2004095199A (ja) | 2004-03-25 |
JP3729262B2 (ja) | 2005-12-21 |
TWI288576B (en) | 2007-10-11 |
CN100416890C (zh) | 2008-09-03 |
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