KR100594768B1 - 포지티브 감광성 조성물 - Google Patents
포지티브 감광성 조성물 Download PDFInfo
- Publication number
- KR100594768B1 KR100594768B1 KR1019990008113A KR19990008113A KR100594768B1 KR 100594768 B1 KR100594768 B1 KR 100594768B1 KR 1019990008113 A KR1019990008113 A KR 1019990008113A KR 19990008113 A KR19990008113 A KR 19990008113A KR 100594768 B1 KR100594768 B1 KR 100594768B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- acid
- optionally substituted
- same
- different
- Prior art date
Links
- 0 CC(*1*(C*)=C1)C(CC1)CCC1(C)OC(C(C)C(C)(C)C)=O Chemical compound CC(*1*(C*)=C1)C(CC1)CCC1(C)OC(C(C)C(C)(C)C)=O 0.000 description 9
- DDSBWPQOCOCDBJ-UHFFFAOYSA-N CC(C(C)(C)C)C(OC(CCC1)CC1O)=O Chemical compound CC(C(C)(C)C)C(OC(CCC1)CC1O)=O DDSBWPQOCOCDBJ-UHFFFAOYSA-N 0.000 description 1
- DJOJZNDROFWSDA-UHFFFAOYSA-N CC(C(C)(C)C)C(OC(CCO1)C1=O)=O Chemical compound CC(C(C)(C)C)C(OC(CCO1)C1=O)=O DJOJZNDROFWSDA-UHFFFAOYSA-N 0.000 description 1
- WJBSVITUEDHQRI-UHFFFAOYSA-N CC(C(O)OC(CCC1)OC1OC)C(C)(C)C Chemical compound CC(C(O)OC(CCC1)OC1OC)C(C)(C)C WJBSVITUEDHQRI-UHFFFAOYSA-N 0.000 description 1
- KRRKIMNDBVYGDI-UHFFFAOYSA-N CCCC(C)(C)C(OCC(CC)(CCC1)C2C1(C)C(CCC(C(C)C)=C1)C1=CC2)=O Chemical compound CCCC(C)(C)C(OCC(CC)(CCC1)C2C1(C)C(CCC(C(C)C)=C1)C1=CC2)=O KRRKIMNDBVYGDI-UHFFFAOYSA-N 0.000 description 1
- HQMRWOZBOMJBEG-QXZMAIOYSA-N CCCCCCC(C)C(CC1)C(C)(CC2)C1C1C2C(C)(CC[C@H](C2)OC(C(C)(C)C(C)(C)C)=O)C2=CC1 Chemical compound CCCCCCC(C)C(CC1)C(C)(CC2)C1C1C2C(C)(CC[C@H](C2)OC(C(C)(C)C(C)(C)C)=O)C2=CC1 HQMRWOZBOMJBEG-QXZMAIOYSA-N 0.000 description 1
- CAIKFDIEZXBBTK-YEAQQTIZSA-N CCCCCCC(CC)C(CC1)C(C)(CC2)C1C(CC1)C2C(C)(CC2)C1C[C@@H]2OC(C(C)(C)C)=O Chemical compound CCCCCCC(CC)C(CC1)C(C)(CC2)C1C(CC1)C2C(C)(CC2)C1C[C@@H]2OC(C(C)(C)C)=O CAIKFDIEZXBBTK-YEAQQTIZSA-N 0.000 description 1
- JNLQEBBTWBKTSQ-ROLXFIACSA-N CCNC1N[C@H]1C Chemical compound CCNC1N[C@H]1C JNLQEBBTWBKTSQ-ROLXFIACSA-N 0.000 description 1
- HOTNUWFOVICMBB-UHFFFAOYSA-N [O-][N+]1(CC1)C1=CC=CCC1 Chemical compound [O-][N+]1(CC1)C1=CC=CCC1 HOTNUWFOVICMBB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C229/00—Compounds containing amino and carboxyl groups bound to the same carbon skeleton
- C07C229/02—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton
- C07C229/04—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated
- C07C229/06—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton
- C07C229/18—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton the nitrogen atom of the amino group being further bound to carbon atoms of six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D213/00—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
- C07D213/02—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
- C07D213/04—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D213/60—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D213/62—Oxygen or sulfur atoms
- C07D213/63—One oxygen atom
- C07D213/64—One oxygen atom attached in position 2 or 6
- C07D213/643—2-Phenoxypyridines; Derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D409/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
- C07D409/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings
- C07D409/12—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a chain containing hetero atoms as chain links
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
- C07D471/08—Bridged systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D498/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms
- C07D498/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D498/04—Ortho-condensed systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/118—Initiator containing with inhibitor or stabilizer
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10061449A JPH11258782A (ja) | 1998-03-12 | 1998-03-12 | ポジ型感光性組成物 |
JP6147898 | 1998-03-12 | ||
JP98-61478 | 1998-03-12 | ||
JP98-61449 | 1999-03-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990077787A KR19990077787A (ko) | 1999-10-25 |
KR100594768B1 true KR100594768B1 (ko) | 2006-07-03 |
Family
ID=26402475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990008113A KR100594768B1 (ko) | 1998-03-12 | 1999-03-11 | 포지티브 감광성 조성물 |
Country Status (2)
Country | Link |
---|---|
US (1) | US6238842B1 (US06238842-20010529-C00048.png) |
KR (1) | KR100594768B1 (US06238842-20010529-C00048.png) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3955148B2 (ja) * | 1998-04-13 | 2007-08-08 | 富士通株式会社 | レジスト組成物およびパターン形成方法 |
JP3642228B2 (ja) * | 1999-05-19 | 2005-04-27 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP4105354B2 (ja) * | 2000-01-17 | 2008-06-25 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
JP2002049157A (ja) * | 2000-08-03 | 2002-02-15 | Nec Corp | ポジ型化学増幅レジスト及びそのパターン形成方法 |
US7105267B2 (en) * | 2001-08-24 | 2006-09-12 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
GR1004163B (el) * | 2001-11-01 | 2003-02-21 | Πολυκυκλικα παραγωγα τροποποιησης των οπτικων ιδιοτητων και των ιδιοτητων αντοχης στο πλασμα των πολυμερων λιθογραφιας | |
US7083892B2 (en) * | 2002-06-28 | 2006-08-01 | Fuji Photo Film Co., Ltd. | Resist composition |
US7127648B2 (en) * | 2002-08-07 | 2006-10-24 | Broadcom Corporation | System and method for performing on-chip self-testing |
KR101038621B1 (ko) * | 2002-11-15 | 2011-06-03 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 전자 소자 제조에 보호층을 사용하는 방법 |
US20040170925A1 (en) * | 2002-12-06 | 2004-09-02 | Roach David Herbert | Positive imageable thick film compositions |
US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
US7402373B2 (en) * | 2004-02-05 | 2008-07-22 | E.I. Du Pont De Nemours And Company | UV radiation blocking protective layers compatible with thick film pastes |
WO2005116761A2 (en) * | 2004-05-27 | 2005-12-08 | E.I. Dupont De Nemours And Company | Uv radiation blocking protective layers compatible with thick film pastes |
US7183036B2 (en) * | 2004-11-12 | 2007-02-27 | International Business Machines Corporation | Low activation energy positive resist |
JP5850607B2 (ja) * | 2010-09-28 | 2016-02-03 | 富士フイルム株式会社 | パターン形成方法、化学増幅型レジスト組成物及びレジスト膜 |
CN114524857B (zh) * | 2022-02-22 | 2023-06-30 | 中国科学院微生物研究所 | 胆酸衍生物及其应用 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04199152A (ja) * | 1990-11-29 | 1992-07-20 | Toshiba Corp | 感光性組成物 |
US5580694A (en) * | 1994-06-27 | 1996-12-03 | International Business Machines Corporation | Photoresist composition with androstane and process for its use |
US5863699A (en) * | 1995-10-12 | 1999-01-26 | Kabushiki Kaisha Toshiba | Photo-sensitive composition |
US5879857A (en) * | 1997-02-21 | 1999-03-09 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
JP3890357B2 (ja) * | 1997-02-07 | 2007-03-07 | 富士フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物 |
JPH10239848A (ja) * | 1997-03-03 | 1998-09-11 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
KR100538968B1 (ko) * | 1997-02-18 | 2006-07-11 | 후지 샤신 필름 가부시기가이샤 | 포지티브감광성조성물 |
-
1999
- 1999-03-11 US US09/266,597 patent/US6238842B1/en not_active Expired - Fee Related
- 1999-03-11 KR KR1019990008113A patent/KR100594768B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR19990077787A (ko) | 1999-10-25 |
US6238842B1 (en) | 2001-05-29 |
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