KR100580749B1 - 이온 주입기 빔라인 구성 부품용 석영 절연체 - Google Patents

이온 주입기 빔라인 구성 부품용 석영 절연체 Download PDF

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Publication number
KR100580749B1
KR100580749B1 KR1020000077679A KR20000077679A KR100580749B1 KR 100580749 B1 KR100580749 B1 KR 100580749B1 KR 1020000077679 A KR1020000077679 A KR 1020000077679A KR 20000077679 A KR20000077679 A KR 20000077679A KR 100580749 B1 KR100580749 B1 KR 100580749B1
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KR
South Korea
Prior art keywords
electrodes
pair
housing
electrode
ion implanter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020000077679A
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English (en)
Korean (ko)
Other versions
KR20010067400A (ko
Inventor
사다트맨드쿠어로쉬
스웬선데이비드리챠드
디버질리오윌리암프랭크
퀸스티븐마이클
완지민
벤베니스트빅터모리아크
Original Assignee
액셀리스 테크놀로지스, 인크.
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Publication date
Application filed by 액셀리스 테크놀로지스, 인크. filed Critical 액셀리스 테크놀로지스, 인크.
Publication of KR20010067400A publication Critical patent/KR20010067400A/ko
Application granted granted Critical
Publication of KR100580749B1 publication Critical patent/KR100580749B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/038—Insulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H01J2237/04735—Changing particle velocity accelerating with electrostatic means
    • H01J2237/04737—Changing particle velocity accelerating with electrostatic means radio-frequency quadrupole [RFQ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020000077679A 1999-12-21 2000-12-18 이온 주입기 빔라인 구성 부품용 석영 절연체 Expired - Fee Related KR100580749B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/469,068 US6291828B1 (en) 1999-12-21 1999-12-21 Glass-like insulator for electrically isolating electrodes from ion implanter housing
US09469068 1999-12-21

Publications (2)

Publication Number Publication Date
KR20010067400A KR20010067400A (ko) 2001-07-12
KR100580749B1 true KR100580749B1 (ko) 2006-05-15

Family

ID=23862290

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000077679A Expired - Fee Related KR100580749B1 (ko) 1999-12-21 2000-12-18 이온 주입기 빔라인 구성 부품용 석영 절연체

Country Status (6)

Country Link
US (1) US6291828B1 (enExample)
EP (1) EP1111652A1 (enExample)
JP (1) JP2001222970A (enExample)
KR (1) KR100580749B1 (enExample)
SG (1) SG88808A1 (enExample)
TW (1) TW525203B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6630677B1 (en) * 2001-08-29 2003-10-07 Advanced Micro Devices, Inc. Electrostatic lens having glassy graphite electrodes
US6949895B2 (en) * 2003-09-03 2005-09-27 Axcelis Technologies, Inc. Unipolar electrostatic quadrupole lens and switching methods for charged beam transport
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
JP6831245B2 (ja) * 2017-01-06 2021-02-17 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
CN109256314B (zh) * 2018-10-11 2020-08-28 中国电子科技集团公司第四十八研究所 一种基片的定点离子注入装置及注入方法
CN109767969A (zh) * 2019-03-08 2019-05-17 无锡诚承电子科技有限公司 离子注入机高压绝缘件及制造方法
US11476087B2 (en) * 2020-08-03 2022-10-18 Applied Materials, Inc. Ion implantation system and linear accelerator having novel accelerator stage configuration
US11388810B2 (en) * 2020-09-17 2022-07-12 Applied Materials, Inc. System, apparatus and method for multi-frequency resonator operation in linear accelerator
US11596051B2 (en) * 2020-12-01 2023-02-28 Applied Materials, Inc. Resonator, linear accelerator configuration and ion implantation system having toroidal resonator
US11665810B2 (en) * 2020-12-04 2023-05-30 Applied Materials, Inc. Modular linear accelerator assembly
JP7557397B2 (ja) * 2021-03-02 2024-09-27 住友重機械イオンテクノロジー株式会社 イオン注入装置および静電四重極レンズ装置
US11825590B2 (en) * 2021-09-13 2023-11-21 Applied Materials, Inc. Drift tube, apparatus and ion implanter having variable focus electrode in linear accelerator

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5894745A (ja) * 1981-11-30 1983-06-06 Agency Of Ind Science & Technol 多重極レンズ
EP0163745B1 (en) * 1983-11-28 1989-03-29 Hitachi, Ltd. Quadrupole particle accelerator
EP0217616A3 (en) * 1985-09-23 1989-01-25 Vg Instruments Group Limited Substrate processing apparatus
DE3688962T2 (de) * 1985-10-04 1993-12-09 Fujitsu Ltd Kühlsystem für eine elektronische Schaltungsanordnung.
US4885500A (en) * 1986-11-19 1989-12-05 Hewlett-Packard Company Quartz quadrupole for mass filter
IL81145A (en) * 1987-01-02 1990-08-31 Univ Ramot Device for transfer of micro-organism sample to culture medium
US4831270A (en) 1987-05-21 1989-05-16 Ion Implant Services Ion implantation apparatus
US4818326A (en) * 1987-07-16 1989-04-04 Texas Instruments Incorporated Processing apparatus
US5796219A (en) 1988-07-15 1998-08-18 Shimadzu Corp Method and apparatus for controlling the acceleration energy of a radio-frequency multipole linear accelerator
JPH061678B2 (ja) 1988-11-24 1994-01-05 工業技術院長 外部共振回路型ｒｆｑ加速器
GB9110207D0 (en) * 1991-05-10 1991-07-03 Fisons Plc Process for the manufacture of a multipolar elongate-electrode lens or mass filter
JP2863962B2 (ja) * 1992-04-10 1999-03-03 株式会社日立製作所 イオン打ち込み装置
JPH05334979A (ja) * 1992-06-01 1993-12-17 Agency Of Ind Science & Technol 荷電ビーム用レンズ構体
JPH06196296A (ja) * 1992-12-24 1994-07-15 Tokyo Seimitsu Co Ltd 加速管
JPH0773041B2 (ja) * 1993-03-02 1995-08-02 株式会社日立製作所 イオン注入装置
US5693939A (en) 1996-07-03 1997-12-02 Purser; Kenneth H. MeV neutral beam ion implanter
DE69735411T2 (de) * 1996-10-09 2006-09-07 Symyx Technologies, Inc., Santa Clara Infrarot-spektroskopie und abbildung von bibliotheken
JP3402998B2 (ja) * 1997-03-18 2003-05-06 株式会社東芝 荷電ビーム描画装置用静電偏向電極の製造方法
US5780863A (en) * 1997-04-29 1998-07-14 Eaton Corporation Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter
US6023060A (en) * 1998-03-03 2000-02-08 Etec Systems, Inc. T-shaped electron-beam microcolumn as a general purpose scanning electron microscope
US6506287B1 (en) * 1998-03-16 2003-01-14 Applied Materials, Inc. Overlap design of one-turn coil
JPH11288800A (ja) * 1998-04-01 1999-10-19 Nissin High Voltage Co Ltd 加速管

Also Published As

Publication number Publication date
KR20010067400A (ko) 2001-07-12
TW525203B (en) 2003-03-21
SG88808A1 (en) 2002-05-21
US6291828B1 (en) 2001-09-18
JP2001222970A (ja) 2001-08-17
EP1111652A1 (en) 2001-06-27

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