KR100534576B1 - 다중 게이트를 갖는 박막 트랜지스터 - Google Patents
다중 게이트를 갖는 박막 트랜지스터 Download PDFInfo
- Publication number
- KR100534576B1 KR100534576B1 KR10-2002-0066564A KR20020066564A KR100534576B1 KR 100534576 B1 KR100534576 B1 KR 100534576B1 KR 20020066564 A KR20020066564 A KR 20020066564A KR 100534576 B1 KR100534576 B1 KR 100534576B1
- Authority
- KR
- South Korea
- Prior art keywords
- tft
- active channel
- gate
- grain boundary
- substrate
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000011159 matrix material Substances 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 231100000518 lethal Toxicity 0.000 description 2
- 230000001665 lethal effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002498 deadly effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Abstract
Description
Claims (4)
- 기판, 상기 기판 상에 형성되는 폴리 실리콘으로 이루어진 소스/드레인 영역 및 채널 영역을 구비하는 반도체층, 상기 반도체층 상부에 형성되는 게이트 절연막 및 상기 게이트 절연막 상부에 상기 채널 영역에 대응하도록 형성되는 게이트 전극을 포함하는 박막트랜지스터에 있어서, 액티브 채널 방향이 서로 수직인 2개 이상의 채널로 구성되고 상기 채널 중 하나 이상의 채널들은 폴리 실리콘 기판의 프라이머리 결정립 경계와 평행하고 나머지 채널들은 상기 프라이머리 결정립 경계와 수직한 다중 게이트를 갖는 박막 트랜지스터.
- 삭제
- 제 1항에 있어서,상기 채널 영역 내에 포함되는 프라이머리 결정립 경계의 수가 일정한 다중 게이트를 갖는 박막 트랜지스터.
- 제 1항의 박막 트랜지스터를 사용하여 구동 회로부에서는 액티브 채널 방향과 프라이머리 결정립 경계가 서로 평행하도록 배치하고, 화소 영역에서는 액티브 채널 방향과 프라이머리 결정립 경계가 서로 수직이 되도록 배치된 것을 특징으로 하는 디스플레이 디바이스.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0066564A KR100534576B1 (ko) | 2002-10-30 | 2002-10-30 | 다중 게이트를 갖는 박막 트랜지스터 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0066564A KR100534576B1 (ko) | 2002-10-30 | 2002-10-30 | 다중 게이트를 갖는 박막 트랜지스터 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040037886A KR20040037886A (ko) | 2004-05-08 |
KR100534576B1 true KR100534576B1 (ko) | 2005-12-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0066564A KR100534576B1 (ko) | 2002-10-30 | 2002-10-30 | 다중 게이트를 갖는 박막 트랜지스터 |
Country Status (1)
Country | Link |
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KR (1) | KR100534576B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101483629B1 (ko) | 2008-11-17 | 2015-01-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조방법 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101209041B1 (ko) | 2005-11-25 | 2012-12-06 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000243963A (ja) * | 1999-02-17 | 2000-09-08 | Sanyo Electric Co Ltd | 薄膜トランジスタ及び表示装置 |
JP2001117115A (ja) * | 1999-10-21 | 2001-04-27 | Sanyo Electric Co Ltd | アクティブマトリクス型表示装置 |
JP2001119032A (ja) * | 1999-10-20 | 2001-04-27 | Sanyo Electric Co Ltd | アクティブマトリクス型表示装置 |
-
2002
- 2002-10-30 KR KR10-2002-0066564A patent/KR100534576B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000243963A (ja) * | 1999-02-17 | 2000-09-08 | Sanyo Electric Co Ltd | 薄膜トランジスタ及び表示装置 |
JP2001119032A (ja) * | 1999-10-20 | 2001-04-27 | Sanyo Electric Co Ltd | アクティブマトリクス型表示装置 |
JP2001117115A (ja) * | 1999-10-21 | 2001-04-27 | Sanyo Electric Co Ltd | アクティブマトリクス型表示装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101483629B1 (ko) | 2008-11-17 | 2015-01-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조방법 |
Also Published As
Publication number | Publication date |
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KR20040037886A (ko) | 2004-05-08 |
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