KR100542992B1 - 다결정 실리콘 박막 트랜지스터를 포함하는 평판 표시 소자 - Google Patents
다결정 실리콘 박막 트랜지스터를 포함하는 평판 표시 소자 Download PDFInfo
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- KR100542992B1 KR100542992B1 KR1020030051681A KR20030051681A KR100542992B1 KR 100542992 B1 KR100542992 B1 KR 100542992B1 KR 1020030051681 A KR1020030051681 A KR 1020030051681A KR 20030051681 A KR20030051681 A KR 20030051681A KR 100542992 B1 KR100542992 B1 KR 100542992B1
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- 239000010409 thin film Substances 0.000 title claims abstract description 86
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 9
- 238000005224 laser annealing Methods 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 12
- 239000011856 silicon-based particle Substances 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 231100000518 lethal Toxicity 0.000 description 2
- 230000001665 lethal effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002498 deadly effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Geometry (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (11)
- 게이트 라인과 데이터 라인으로 구분되고 상기 게이트 라인과 데이터 라인에 의해 인가되는 신호에 의해 구동하는 박막트랜지스터를 구비하는 화소부; 및상기 게이트 라인과 데이터 라인에 각각 연결되어 상기 화소부에 신호를 인가하는 1 이상의 박막트랜지스터를 구비하는 구동 회로부를 포함하고 있으며,상기 구동 회로부에 구비된 박막트랜지스터의 액티브 채널 영역에 형성되며 전류의 방향선과 만나는 다결정 실리콘의 결정립 경계의 평균 개수가 액티브 채널의 단위 면적에 대하여 상기 회로부에 구비된 박막 트랜지스터의 액티브 채널 영역에 형성되며 전류의 방향선과 만나는 다결정 실리콘의 결정립 경계의 평균 개수보다 적어도 1 이상 적으며, 상기 화소부에 구비된 박막 트랜지스터의 액티브 채널 길이가 상기 구동 회로부에 구비된 박막 트랜지스터의 액티브 채널 길이보다 긴 것을 특징으로 하는 다결정 실리콘 박막트랜지스터를 구비하는 평판 표시 소자.
- 제 1항에 있어서,상기 다결정 실리콘의 결정립 모양은 이방성인 다결정 실리콘 박막트랜지스터이며, 상기 결정립 경계는 프라이머리 결정립 경계인 평판 표시 소자.
- 제 2항에 있어서,상기 구동 회로부에 구비된 박막트랜지스터의 액티브 채널 영역에 형성된 상기 결정립 경계는 전류의 방향선과 -45°이상 45°이하가 되도록 배치되며, 상기 화소부에 구비된 박막트랜지스터의 액티브 채널 영역에 형성된 상기 결정립 경계는 전류의 방향선과 -45°이상 45°이하가 되도록 배치된 것인 다결정 실리콘 박막트랜지스터를 구비하는 평판 표시 소자.
- 제 2항에 있어서,상기 구동 회로부에 구비된 박막트랜지스터의 액티브 채널 영역에 형성된 상기 결정립 경계는 전류의 방향선과 45°이상 135°이하가 되도록 배치되며, 상기 화소부에 구비된 박막트랜지스터의 액티브 채널 영역에 형성된 상기 결정립 경계는 전류의 방향선과 -45°이상 45° 이하의 각을 이루도록 배치된 것인 다결정 실리콘 박막트랜지스터를 구비하는 평판 표시 소자.
- 삭제
- 제 2항에 있어서,상기 다결정 실리콘은 연속 측면 결정화법(Sequential Lateral Solidification; SLS)법에 의하여 제조되는 것인 다결정 실리콘 박막트랜지스터를 구비하는 평판 표시 소자.
- 제 1항에 있어서,상기 다결정 실리콘의 결정립 모양은 등방성인 다결정 실리콘 박막트랜지스터를 구비하는 평판 표시 소자.
- 삭제
- 제 7항에 있어서,상기 다결정 실리콘은 엑시머 레이저 어닐링법(Eximer Laser Annealing)에 의하여 형성되는 것인 다결정 실리콘 박막트랜지스터를 구비하는 평판 표시 소자.
- 삭제
- 제 1항에 있어서,상기 평판 표시 소자는 유기 전계 발광 소자 또는 액정 표시 소자인 다결정 실리콘 박막 트랜지스터를 포함하는 평판 표시 소자.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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KR1020030051681A KR100542992B1 (ko) | 2003-07-25 | 2003-07-25 | 다결정 실리콘 박막 트랜지스터를 포함하는 평판 표시 소자 |
CNB2004100050257A CN1324540C (zh) | 2003-06-05 | 2004-02-12 | 具有多晶硅薄膜晶体管的平板显示装置 |
US10/779,781 US7297980B2 (en) | 2003-06-05 | 2004-02-18 | Flat panel display device with polycrystalline silicon thin film transistor |
US11/942,460 US8049220B2 (en) | 2003-06-05 | 2007-11-19 | Flat panel display device with polycrystalline silicon thin film transistor |
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KR1020030051681A KR100542992B1 (ko) | 2003-07-25 | 2003-07-25 | 다결정 실리콘 박막 트랜지스터를 포함하는 평판 표시 소자 |
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KR20050012977A KR20050012977A (ko) | 2005-02-02 |
KR100542992B1 true KR100542992B1 (ko) | 2006-01-20 |
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