KR100523405B1 - 자장 인가식 실리콘 단결정 인상 방법 - Google Patents

자장 인가식 실리콘 단결정 인상 방법 Download PDF

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Publication number
KR100523405B1
KR100523405B1 KR10-2003-0060390A KR20030060390A KR100523405B1 KR 100523405 B1 KR100523405 B1 KR 100523405B1 KR 20030060390 A KR20030060390 A KR 20030060390A KR 100523405 B1 KR100523405 B1 KR 100523405B1
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KR
South Korea
Prior art keywords
single crystal
silicon single
crystal rod
silicon
magnetic field
Prior art date
Application number
KR10-2003-0060390A
Other languages
English (en)
Korean (ko)
Other versions
KR20040020813A (ko
Inventor
모리타히로시
Original Assignee
스미토모 미츠비시 실리콘 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 스미토모 미츠비시 실리콘 코포레이션 filed Critical 스미토모 미츠비시 실리콘 코포레이션
Publication of KR20040020813A publication Critical patent/KR20040020813A/ko
Application granted granted Critical
Publication of KR100523405B1 publication Critical patent/KR100523405B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR10-2003-0060390A 2002-08-30 2003-08-29 자장 인가식 실리콘 단결정 인상 방법 KR100523405B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00252592 2002-08-30
JP2002252592A JP4345276B2 (ja) 2002-08-30 2002-08-30 磁場印加式シリコン単結晶の引上げ方法

Publications (2)

Publication Number Publication Date
KR20040020813A KR20040020813A (ko) 2004-03-09
KR100523405B1 true KR100523405B1 (ko) 2005-10-24

Family

ID=32058826

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-0060390A KR100523405B1 (ko) 2002-08-30 2003-08-29 자장 인가식 실리콘 단결정 인상 방법

Country Status (2)

Country Link
JP (1) JP4345276B2 (ja)
KR (1) KR100523405B1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006069841A (ja) * 2004-09-02 2006-03-16 Sumco Corp 磁場印加式シリコン単結晶の引上げ方法
KR100788018B1 (ko) * 2004-11-29 2007-12-21 주식회사 실트론 실리콘 단결정 잉곳 및 그로부터 제조된 실리콘 웨이퍼
KR100840751B1 (ko) * 2005-07-26 2008-06-24 주식회사 실트론 고품질 실리콘 단결정 잉곳 제조 방법, 성장 장치 및그로부터 제조된 잉곳 , 웨이퍼
JP4757129B2 (ja) * 2006-07-20 2011-08-24 三菱電機株式会社 超電導電磁石
KR100793371B1 (ko) * 2006-08-28 2008-01-11 주식회사 실트론 실리콘 단결정 성장 방법 및 성장 장치
JP5889509B2 (ja) * 2008-05-26 2016-03-22 株式会社東芝 単結晶引上げ装置用超電導マグネット装置
JP5056603B2 (ja) * 2008-06-11 2012-10-24 株式会社Ｓｕｍｃｏ シリコン単結晶の引上げ方法及び該方法により引上げられたインゴットから得られたシリコン単結晶ウェーハ
JP5454625B2 (ja) * 2012-06-20 2014-03-26 株式会社Ｓｕｍｃｏ シリコン単結晶の引上げ方法により引上げられたインゴットから得られたシリコン単結晶ウェーハ

Also Published As

Publication number Publication date
JP4345276B2 (ja) 2009-10-14
JP2004091240A (ja) 2004-03-25
KR20040020813A (ko) 2004-03-09

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