KR100521820B1 - 도금된구리상부표면레벨상호접속을갖는집적회로를위한플라스틱캡슐화 - Google Patents
도금된구리상부표면레벨상호접속을갖는집적회로를위한플라스틱캡슐화 Download PDFInfo
- Publication number
- KR100521820B1 KR100521820B1 KR1019970022513A KR19970022513A KR100521820B1 KR 100521820 B1 KR100521820 B1 KR 100521820B1 KR 1019970022513 A KR1019970022513 A KR 1019970022513A KR 19970022513 A KR19970022513 A KR 19970022513A KR 100521820 B1 KR100521820 B1 KR 100521820B1
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- surface level
- plastic package
- top surface
- interconnect material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/425—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Chemically Coating (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1876096P | 1996-05-31 | 1996-05-31 | |
| US60/018,760 | 1996-05-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970077573A KR970077573A (ko) | 1997-12-12 |
| KR100521820B1 true KR100521820B1 (ko) | 2006-01-27 |
Family
ID=21789647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970022513A Expired - Lifetime KR100521820B1 (ko) | 1996-05-31 | 1997-05-31 | 도금된구리상부표면레벨상호접속을갖는집적회로를위한플라스틱캡슐화 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6140702A (https=) |
| JP (1) | JP3862362B2 (https=) |
| KR (1) | KR100521820B1 (https=) |
| TW (1) | TW349250B (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6646347B2 (en) * | 2001-11-30 | 2003-11-11 | Motorola, Inc. | Semiconductor power device and method of formation |
| EP1403926A2 (en) * | 2002-09-27 | 2004-03-31 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
| DE102004047522B3 (de) * | 2004-09-28 | 2006-04-06 | Infineon Technologies Ag | Halbleiterchip mit einer Metallbeschichtungsstruktur und Verfahren zur Herstellung desselben |
| DE102006018765A1 (de) * | 2006-04-20 | 2007-10-25 | Infineon Technologies Ag | Leistungshalbleiterbauelement, Leistungshalbleiterbauteil sowie Verfahren zu deren Herstellung |
| US8030733B1 (en) | 2007-05-22 | 2011-10-04 | National Semiconductor Corporation | Copper-compatible fuse target |
| US7964934B1 (en) | 2007-05-22 | 2011-06-21 | National Semiconductor Corporation | Fuse target and method of forming the fuse target in a copper process flow |
| US7709956B2 (en) * | 2008-09-15 | 2010-05-04 | National Semiconductor Corporation | Copper-topped interconnect structure that has thin and thick copper traces and method of forming the copper-topped interconnect structure |
| US8282846B2 (en) * | 2010-02-27 | 2012-10-09 | National Semiconductor Corporation | Metal interconnect structure with a side wall spacer that protects an ARC layer and a bond pad from corrosion and method of forming the metal interconnect structure |
| US9437589B2 (en) * | 2014-03-25 | 2016-09-06 | Infineon Technologies Ag | Protection devices |
| US9559036B1 (en) | 2014-08-01 | 2017-01-31 | Altera Corporation | Integrated circuit package with plated heat spreader |
| US9922949B2 (en) | 2015-07-15 | 2018-03-20 | Chip Solutions, LLC | Semiconductor device and method |
| US10586746B2 (en) | 2016-01-14 | 2020-03-10 | Chip Solutions, LLC | Semiconductor device and method |
| US9847244B2 (en) | 2015-07-15 | 2017-12-19 | Chip Solutions, LLC | Semiconductor device and method |
| WO2017123870A1 (en) * | 2016-01-14 | 2017-07-20 | Chip Solutions, LLC | Releasable carrier and method |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR96113E (fr) * | 1967-12-06 | 1972-05-19 | Ibm | Dispositif semi-conducteur. |
| JPS5282183A (en) * | 1975-12-29 | 1977-07-09 | Nec Corp | Connecting wires for semiconductor devices |
| JPS594050A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体装置 |
| US4845543A (en) * | 1983-09-28 | 1989-07-04 | Hitachi, Ltd. | Semiconductor device and method of manufacturing the same |
| US4843453A (en) * | 1985-05-10 | 1989-06-27 | Texas Instruments Incorporated | Metal contacts and interconnections for VLSI devices |
| JPS63148646A (ja) * | 1986-12-12 | 1988-06-21 | Toshiba Corp | 半導体装置 |
| US4835120A (en) * | 1987-01-12 | 1989-05-30 | Debendra Mallik | Method of making a multilayer molded plastic IC package |
| FR2616966B1 (fr) * | 1987-06-22 | 1989-10-27 | Thomson Semiconducteurs | Structure de transistors mos de puissance |
| JP2659714B2 (ja) * | 1987-07-21 | 1997-09-30 | 株式会社日立製作所 | 半導体集積回路装置 |
| US4931323A (en) * | 1987-12-10 | 1990-06-05 | Texas Instruments Incorporated | Thick film copper conductor patterning by laser |
| US5191405A (en) * | 1988-12-23 | 1993-03-02 | Matsushita Electric Industrial Co., Ltd. | Three-dimensional stacked lsi |
| US5229646A (en) * | 1989-01-13 | 1993-07-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with a copper wires ball bonded to aluminum electrodes |
| US5272098A (en) * | 1990-11-21 | 1993-12-21 | Texas Instruments Incorporated | Vertical and lateral insulated-gate, field-effect transistors, systems and methods |
| US5441684A (en) * | 1993-09-24 | 1995-08-15 | Vlsi Technology, Inc. | Method of forming molded plastic packages with integrated heat sinks |
| US5637922A (en) * | 1994-02-07 | 1997-06-10 | General Electric Company | Wireless radio frequency power semiconductor devices using high density interconnect |
| US6150722A (en) * | 1994-11-02 | 2000-11-21 | Texas Instruments Incorporated | Ldmos transistor with thick copper interconnect |
| US5495667A (en) * | 1994-11-07 | 1996-03-05 | Micron Technology, Inc. | Method for forming contact pins for semiconductor dice and interconnects |
| TW373308B (en) * | 1995-02-24 | 1999-11-01 | Agere Systems Inc | Thin packaging of multi-chip modules with enhanced thermal/power management |
-
1997
- 1997-05-28 US US08/864,386 patent/US6140702A/en not_active Expired - Lifetime
- 1997-05-30 JP JP14268497A patent/JP3862362B2/ja not_active Expired - Fee Related
- 1997-05-31 KR KR1019970022513A patent/KR100521820B1/ko not_active Expired - Lifetime
- 1997-07-02 TW TW086107667A patent/TW349250B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP3862362B2 (ja) | 2006-12-27 |
| US6140702A (en) | 2000-10-31 |
| KR970077573A (ko) | 1997-12-12 |
| TW349250B (en) | 1999-01-01 |
| JPH1056031A (ja) | 1998-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6693349B2 (en) | Semiconductor chip package having a leadframe with a footprint of about the same size as the chip | |
| US6423623B1 (en) | Low Resistance package for semiconductor devices | |
| US5570272A (en) | Apparatus for encapsulating an integrated circuit package | |
| US6307755B1 (en) | Surface mount semiconductor package, die-leadframe combination and leadframe therefor and method of mounting leadframes to surfaces of semiconductor die | |
| EP1020903B1 (en) | A semiconductor device using a lead frame and its manufacturing method | |
| KR100521820B1 (ko) | 도금된구리상부표면레벨상호접속을갖는집적회로를위한플라스틱캡슐화 | |
| CN101548377B (zh) | 具有增强散热功能的封装集成电路 | |
| JP2002164437A (ja) | ボンディングおよび電流配分を分散したパワー集積回路および方法 | |
| KR930004246B1 (ko) | 수지밀봉형 반도체장치 | |
| KR101266335B1 (ko) | 플립 칩 장치를 제조하기 위한 구조 및 방법 | |
| US20010048148A1 (en) | Semiconductor device and a method of manufacturing the same | |
| JP4094075B2 (ja) | ワイヤボンドなしモジュールパッケージおよび製造方法 | |
| JPH04293259A (ja) | 半導体装置およびその製造方法 | |
| US6140150A (en) | Plastic encapsulation for integrated circuits having plated copper top surface level interconnect | |
| US6710448B2 (en) | Bonding pad structure | |
| US20030020177A1 (en) | Method of manufacturing a semiconductor device having a die pad without a downset | |
| US5382546A (en) | Semiconductor device and method of fabricating same, as well as lead frame used therein and method of fabricating same | |
| US20100052137A1 (en) | Enhanced wire bond stability on reactive metal surfaces of a semiconductor device by encapsulation of the bond structure | |
| EP0415106B1 (en) | Lead frames for semiconductor device | |
| US20190259874A1 (en) | Wafer based beol process for chip embedding | |
| CN212485275U (zh) | 半导体器件 | |
| US7956446B2 (en) | Semiconductor device and method | |
| US20260123545A1 (en) | Method for manufacturing a system in package (sip) using an integrated packlet on leadframe | |
| KR100374300B1 (ko) | 반도체용 구리 배선 제조 방법 | |
| KR100335759B1 (ko) | 볼 그리드 어레이 반도체 패키지 및 그 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| D13-X000 | Search requested |
St.27 status event code: A-1-2-D10-D13-srh-X000 |
|
| D14-X000 | Search report completed |
St.27 status event code: A-1-2-D10-D14-srh-X000 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20120927 Year of fee payment: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| FPAY | Annual fee payment |
Payment date: 20130927 Year of fee payment: 9 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |
|
| FPAY | Annual fee payment |
Payment date: 20140929 Year of fee payment: 10 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10 |
|
| FPAY | Annual fee payment |
Payment date: 20150930 Year of fee payment: 11 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 11 |
|
| FPAY | Annual fee payment |
Payment date: 20160929 Year of fee payment: 12 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 12 |
|
| PC1801 | Expiration of term |
St.27 status event code: N-4-6-H10-H14-oth-PC1801 Not in force date: 20170601 Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |