KR100521820B1 - 도금된구리상부표면레벨상호접속을갖는집적회로를위한플라스틱캡슐화 - Google Patents

도금된구리상부표면레벨상호접속을갖는집적회로를위한플라스틱캡슐화 Download PDF

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Publication number
KR100521820B1
KR100521820B1 KR1019970022513A KR19970022513A KR100521820B1 KR 100521820 B1 KR100521820 B1 KR 100521820B1 KR 1019970022513 A KR1019970022513 A KR 1019970022513A KR 19970022513 A KR19970022513 A KR 19970022513A KR 100521820 B1 KR100521820 B1 KR 100521820B1
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South Korea
Prior art keywords
copper
surface level
plastic package
top surface
interconnect material
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019970022513A
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English (en)
Korean (ko)
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KR970077573A (ko
Inventor
테일러 알. 에플랜드
데일 제이. 스켈톤
쾅 쥬안 마이
챨스 이. 윌리엄
Original Assignee
텍사스 인스트루먼츠 인코포레이티드
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Publication of KR970077573A publication Critical patent/KR970077573A/ko
Application granted granted Critical
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425Barrier, adhesion or liner layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Chemically Coating (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
KR1019970022513A 1996-05-31 1997-05-31 도금된구리상부표면레벨상호접속을갖는집적회로를위한플라스틱캡슐화 Expired - Lifetime KR100521820B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1876096P 1996-05-31 1996-05-31
US60/018,760 1996-05-31

Publications (2)

Publication Number Publication Date
KR970077573A KR970077573A (ko) 1997-12-12
KR100521820B1 true KR100521820B1 (ko) 2006-01-27

Family

ID=21789647

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970022513A Expired - Lifetime KR100521820B1 (ko) 1996-05-31 1997-05-31 도금된구리상부표면레벨상호접속을갖는집적회로를위한플라스틱캡슐화

Country Status (4)

Country Link
US (1) US6140702A (https=)
JP (1) JP3862362B2 (https=)
KR (1) KR100521820B1 (https=)
TW (1) TW349250B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646347B2 (en) * 2001-11-30 2003-11-11 Motorola, Inc. Semiconductor power device and method of formation
EP1403926A2 (en) * 2002-09-27 2004-03-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device
DE102004047522B3 (de) * 2004-09-28 2006-04-06 Infineon Technologies Ag Halbleiterchip mit einer Metallbeschichtungsstruktur und Verfahren zur Herstellung desselben
DE102006018765A1 (de) * 2006-04-20 2007-10-25 Infineon Technologies Ag Leistungshalbleiterbauelement, Leistungshalbleiterbauteil sowie Verfahren zu deren Herstellung
US8030733B1 (en) 2007-05-22 2011-10-04 National Semiconductor Corporation Copper-compatible fuse target
US7964934B1 (en) 2007-05-22 2011-06-21 National Semiconductor Corporation Fuse target and method of forming the fuse target in a copper process flow
US7709956B2 (en) * 2008-09-15 2010-05-04 National Semiconductor Corporation Copper-topped interconnect structure that has thin and thick copper traces and method of forming the copper-topped interconnect structure
US8282846B2 (en) * 2010-02-27 2012-10-09 National Semiconductor Corporation Metal interconnect structure with a side wall spacer that protects an ARC layer and a bond pad from corrosion and method of forming the metal interconnect structure
US9437589B2 (en) * 2014-03-25 2016-09-06 Infineon Technologies Ag Protection devices
US9559036B1 (en) 2014-08-01 2017-01-31 Altera Corporation Integrated circuit package with plated heat spreader
US9922949B2 (en) 2015-07-15 2018-03-20 Chip Solutions, LLC Semiconductor device and method
US10586746B2 (en) 2016-01-14 2020-03-10 Chip Solutions, LLC Semiconductor device and method
US9847244B2 (en) 2015-07-15 2017-12-19 Chip Solutions, LLC Semiconductor device and method
WO2017123870A1 (en) * 2016-01-14 2017-07-20 Chip Solutions, LLC Releasable carrier and method

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Publication number Priority date Publication date Assignee Title
FR96113E (fr) * 1967-12-06 1972-05-19 Ibm Dispositif semi-conducteur.
JPS5282183A (en) * 1975-12-29 1977-07-09 Nec Corp Connecting wires for semiconductor devices
JPS594050A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
US4843453A (en) * 1985-05-10 1989-06-27 Texas Instruments Incorporated Metal contacts and interconnections for VLSI devices
JPS63148646A (ja) * 1986-12-12 1988-06-21 Toshiba Corp 半導体装置
US4835120A (en) * 1987-01-12 1989-05-30 Debendra Mallik Method of making a multilayer molded plastic IC package
FR2616966B1 (fr) * 1987-06-22 1989-10-27 Thomson Semiconducteurs Structure de transistors mos de puissance
JP2659714B2 (ja) * 1987-07-21 1997-09-30 株式会社日立製作所 半導体集積回路装置
US4931323A (en) * 1987-12-10 1990-06-05 Texas Instruments Incorporated Thick film copper conductor patterning by laser
US5191405A (en) * 1988-12-23 1993-03-02 Matsushita Electric Industrial Co., Ltd. Three-dimensional stacked lsi
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
US5272098A (en) * 1990-11-21 1993-12-21 Texas Instruments Incorporated Vertical and lateral insulated-gate, field-effect transistors, systems and methods
US5441684A (en) * 1993-09-24 1995-08-15 Vlsi Technology, Inc. Method of forming molded plastic packages with integrated heat sinks
US5637922A (en) * 1994-02-07 1997-06-10 General Electric Company Wireless radio frequency power semiconductor devices using high density interconnect
US6150722A (en) * 1994-11-02 2000-11-21 Texas Instruments Incorporated Ldmos transistor with thick copper interconnect
US5495667A (en) * 1994-11-07 1996-03-05 Micron Technology, Inc. Method for forming contact pins for semiconductor dice and interconnects
TW373308B (en) * 1995-02-24 1999-11-01 Agere Systems Inc Thin packaging of multi-chip modules with enhanced thermal/power management

Also Published As

Publication number Publication date
JP3862362B2 (ja) 2006-12-27
US6140702A (en) 2000-10-31
KR970077573A (ko) 1997-12-12
TW349250B (en) 1999-01-01
JPH1056031A (ja) 1998-02-24

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