JP3862362B2 - 集積回路およびその製造方法 - Google Patents

集積回路およびその製造方法 Download PDF

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Publication number
JP3862362B2
JP3862362B2 JP14268497A JP14268497A JP3862362B2 JP 3862362 B2 JP3862362 B2 JP 3862362B2 JP 14268497 A JP14268497 A JP 14268497A JP 14268497 A JP14268497 A JP 14268497A JP 3862362 B2 JP3862362 B2 JP 3862362B2
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Japan
Prior art keywords
copper
integrated circuit
top level
layer
interconnect
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Expired - Fee Related
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JP14268497A
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English (en)
Japanese (ja)
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JPH1056031A (ja
JPH1056031A5 (https=
Inventor
アール．エフランド テイラー
ジェイ．スケルトン デイル
ズアン マイ クァング
イー．ウィリアムズ チャールズ
Original Assignee
テキサス インスツルメンツ インコーポレイテツド
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Publication of JPH1056031A publication Critical patent/JPH1056031A/ja
Publication of JPH1056031A5 publication Critical patent/JPH1056031A5/ja
Application granted granted Critical
Publication of JP3862362B2 publication Critical patent/JP3862362B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Chemically Coating (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP14268497A 1996-05-31 1997-05-30 集積回路およびその製造方法 Expired - Fee Related JP3862362B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1876096P 1996-05-31 1996-05-31
US018760 1996-05-31

Publications (3)

Publication Number Publication Date
JPH1056031A JPH1056031A (ja) 1998-02-24
JPH1056031A5 JPH1056031A5 (https=) 2005-04-07
JP3862362B2 true JP3862362B2 (ja) 2006-12-27

Family

ID=21789647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14268497A Expired - Fee Related JP3862362B2 (ja) 1996-05-31 1997-05-30 集積回路およびその製造方法

Country Status (4)

Country Link
US (1) US6140702A (https=)
JP (1) JP3862362B2 (https=)
KR (1) KR100521820B1 (https=)
TW (1) TW349250B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646347B2 (en) * 2001-11-30 2003-11-11 Motorola, Inc. Semiconductor power device and method of formation
EP1403926A2 (en) * 2002-09-27 2004-03-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device
DE102004047522B3 (de) * 2004-09-28 2006-04-06 Infineon Technologies Ag Halbleiterchip mit einer Metallbeschichtungsstruktur und Verfahren zur Herstellung desselben
DE102006018765A1 (de) * 2006-04-20 2007-10-25 Infineon Technologies Ag Leistungshalbleiterbauelement, Leistungshalbleiterbauteil sowie Verfahren zu deren Herstellung
US8030733B1 (en) 2007-05-22 2011-10-04 National Semiconductor Corporation Copper-compatible fuse target
US7964934B1 (en) 2007-05-22 2011-06-21 National Semiconductor Corporation Fuse target and method of forming the fuse target in a copper process flow
US7709956B2 (en) * 2008-09-15 2010-05-04 National Semiconductor Corporation Copper-topped interconnect structure that has thin and thick copper traces and method of forming the copper-topped interconnect structure
US8282846B2 (en) * 2010-02-27 2012-10-09 National Semiconductor Corporation Metal interconnect structure with a side wall spacer that protects an ARC layer and a bond pad from corrosion and method of forming the metal interconnect structure
US9437589B2 (en) * 2014-03-25 2016-09-06 Infineon Technologies Ag Protection devices
US9559036B1 (en) 2014-08-01 2017-01-31 Altera Corporation Integrated circuit package with plated heat spreader
US9922949B2 (en) 2015-07-15 2018-03-20 Chip Solutions, LLC Semiconductor device and method
US10586746B2 (en) 2016-01-14 2020-03-10 Chip Solutions, LLC Semiconductor device and method
US9847244B2 (en) 2015-07-15 2017-12-19 Chip Solutions, LLC Semiconductor device and method
WO2017123870A1 (en) * 2016-01-14 2017-07-20 Chip Solutions, LLC Releasable carrier and method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR96113E (fr) * 1967-12-06 1972-05-19 Ibm Dispositif semi-conducteur.
JPS5282183A (en) * 1975-12-29 1977-07-09 Nec Corp Connecting wires for semiconductor devices
JPS594050A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
US4843453A (en) * 1985-05-10 1989-06-27 Texas Instruments Incorporated Metal contacts and interconnections for VLSI devices
JPS63148646A (ja) * 1986-12-12 1988-06-21 Toshiba Corp 半導体装置
US4835120A (en) * 1987-01-12 1989-05-30 Debendra Mallik Method of making a multilayer molded plastic IC package
FR2616966B1 (fr) * 1987-06-22 1989-10-27 Thomson Semiconducteurs Structure de transistors mos de puissance
JP2659714B2 (ja) * 1987-07-21 1997-09-30 株式会社日立製作所 半導体集積回路装置
US4931323A (en) * 1987-12-10 1990-06-05 Texas Instruments Incorporated Thick film copper conductor patterning by laser
US5191405A (en) * 1988-12-23 1993-03-02 Matsushita Electric Industrial Co., Ltd. Three-dimensional stacked lsi
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
US5272098A (en) * 1990-11-21 1993-12-21 Texas Instruments Incorporated Vertical and lateral insulated-gate, field-effect transistors, systems and methods
US5441684A (en) * 1993-09-24 1995-08-15 Vlsi Technology, Inc. Method of forming molded plastic packages with integrated heat sinks
US5637922A (en) * 1994-02-07 1997-06-10 General Electric Company Wireless radio frequency power semiconductor devices using high density interconnect
US6150722A (en) * 1994-11-02 2000-11-21 Texas Instruments Incorporated Ldmos transistor with thick copper interconnect
US5495667A (en) * 1994-11-07 1996-03-05 Micron Technology, Inc. Method for forming contact pins for semiconductor dice and interconnects
TW373308B (en) * 1995-02-24 1999-11-01 Agere Systems Inc Thin packaging of multi-chip modules with enhanced thermal/power management

Also Published As

Publication number Publication date
US6140702A (en) 2000-10-31
KR970077573A (ko) 1997-12-12
TW349250B (en) 1999-01-01
KR100521820B1 (ko) 2006-01-27
JPH1056031A (ja) 1998-02-24

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