KR100516950B1 - 포토다이오드 - Google Patents

포토다이오드 Download PDF

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Publication number
KR100516950B1
KR100516950B1 KR10-1998-0009586A KR19980009586A KR100516950B1 KR 100516950 B1 KR100516950 B1 KR 100516950B1 KR 19980009586 A KR19980009586 A KR 19980009586A KR 100516950 B1 KR100516950 B1 KR 100516950B1
Authority
KR
South Korea
Prior art keywords
type layer
photodiode
type
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR10-1998-0009586A
Other languages
English (en)
Korean (ko)
Other versions
KR19980080485A (ko
Inventor
신지 야노
Original Assignee
로무 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 로무 가부시키가이샤 filed Critical 로무 가부시키가이샤
Publication of KR19980080485A publication Critical patent/KR19980080485A/ko
Application granted granted Critical
Publication of KR100516950B1 publication Critical patent/KR100516950B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes

Landscapes

  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
KR10-1998-0009586A 1997-03-28 1998-03-20 포토다이오드 Expired - Lifetime KR100516950B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9077480A JPH10270742A (ja) 1997-03-28 1997-03-28 フォトダイオード
JP77480 1997-03-28
JP97-77480 1997-03-28

Publications (2)

Publication Number Publication Date
KR19980080485A KR19980080485A (ko) 1998-11-25
KR100516950B1 true KR100516950B1 (ko) 2005-11-08

Family

ID=13635154

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0009586A Expired - Lifetime KR100516950B1 (ko) 1997-03-28 1998-03-20 포토다이오드

Country Status (3)

Country Link
US (1) US6118165A (enExample)
JP (1) JPH10270742A (enExample)
KR (1) KR100516950B1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7187048B2 (en) * 2000-03-22 2007-03-06 Kabushiki Kaisha Toshiba Semiconductor light-receiving device
DE10024473B4 (de) * 2000-05-18 2007-04-19 Vishay Semiconductor Gmbh Optischer Empfänger
KR100702909B1 (ko) * 2000-11-02 2007-04-03 가부시키가이샤 야스카와덴키 웨이퍼 프리얼라인먼트 장치와 그 웨이퍼 유무 판정방법,웨이퍼 에지 위치 검출방법과 그 방법을 실행시키는프로그램을 기록한 컴퓨터 판독 가능한 기록매체, 웨이퍼의에지 위치 검출장치 및 프리얼라인먼트 센서
JP3807954B2 (ja) * 2001-06-25 2006-08-09 シャープ株式会社 フォトダイオード
DE102014211829A1 (de) * 2014-06-20 2015-12-24 Robert Bosch Gmbh Thermodiodenelement für einen Fotosensor zur Infrarot-Strahlungsmessung, Fotosensor und Verfahren zum Herstellen eines Thermodiodenelements

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4241358A (en) * 1979-03-26 1980-12-23 Trw Inc. Radiation sensitive device with lateral current
US5130531A (en) * 1989-06-09 1992-07-14 Omron Corporation Reflective photosensor and semiconductor light emitting apparatus each using micro Fresnel lens
JPH0394478A (ja) * 1989-09-06 1991-04-19 Matsushita Electron Corp 半導体装置
US5128729A (en) * 1990-11-13 1992-07-07 Motorola, Inc. Complex opto-isolator with improved stand-off voltage stability
US5291038A (en) * 1990-12-19 1994-03-01 Sharp Kabushiki Kaisha Reflective type photointerrupter
JPH04280674A (ja) * 1991-03-08 1992-10-06 Sharp Corp 回路内蔵受光素子
JPH04280685A (ja) * 1991-03-08 1992-10-06 Sony Corp 受光装置
US5592124A (en) * 1995-06-26 1997-01-07 Burr-Brown Corporation Integrated photodiode/transimpedance amplifier
US5903021A (en) * 1997-01-17 1999-05-11 Eastman Kodak Company Partially pinned photodiode for solid state image sensors

Also Published As

Publication number Publication date
KR19980080485A (ko) 1998-11-25
JPH10270742A (ja) 1998-10-09
US6118165A (en) 2000-09-12

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