KR100508744B1 - 진공 막형성장치 - Google Patents
진공 막형성장치 Download PDFInfo
- Publication number
- KR100508744B1 KR100508744B1 KR10-1999-0043798A KR19990043798A KR100508744B1 KR 100508744 B1 KR100508744 B1 KR 100508744B1 KR 19990043798 A KR19990043798 A KR 19990043798A KR 100508744 B1 KR100508744 B1 KR 100508744B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- mounting
- chamber
- film forming
- cooling means
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (4)
- 기판에 막형성처리를 실시하는 진공처리실과, 진공 배기 가능한 수단을 구비하고 상기 기판을 대기압의 외부로부터 상기 진공처리실내로 반출입하기 위한 장착/취출실을 구비한 진공 막형성장치에 있어서,상기 장착/취출실에 기판냉각수단과 기판가열수단 양측을 설치한 것을 특징으로 하는 진공 막형성장치.
- 제 1 항에 있어서, 상기 장착/취출실의 내부의 일측에서 냉각된 플레이트로 이루어지는 상기 기판냉각수단을 설치함과 동시에 상기 내부의 다른 측에서 상기 기판냉각수단과 간격을 두고 대향하는 히터 플레이트를 구비한 상기 기판가열수단을 설치하고,상기 간격으로 반입된 상기 기판을 상기 플레이트에 접근 및 접촉한 위치 중 어느 한 측으로 이동시키는 승강장치를 설치한 것을 특징으로 하는 진공 막형성장치.
- 제 1 항에 있어서, 상기 장착/취출실의 내부를 2 실로 구획하고, 그 일측의 구획내에 냉각된 플레이트로 이루어지는 기판냉각수단을 설치하고,또 다른 일측의 구획내에 기판가열수단을 설치한 것을 특징으로 하는 진공 막형성장치.
- 제 1 항에 있어서, 상기 기판냉각수단은 그 내부에 유체통로를 구비한 플레이트로 구성하고, 상기 유체통로에 흐르는 저온유체의 온도를 제어하여 기판냉각수단으로 하는 동시에, 상기 유체통로에 가열유체를 유통시켜 기판가열수단으로 하는 것을 특징으로 하는 진공 막형성장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28962498A JP3844608B2 (ja) | 1998-10-12 | 1998-10-12 | 真空成膜装置 |
JP98-289624 | 1998-10-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000028980A KR20000028980A (ko) | 2000-05-25 |
KR100508744B1 true KR100508744B1 (ko) | 2005-08-17 |
Family
ID=17745653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-1999-0043798A KR100508744B1 (ko) | 1998-10-12 | 1999-10-11 | 진공 막형성장치 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3844608B2 (ko) |
KR (1) | KR100508744B1 (ko) |
TW (1) | TW439100B (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5021112B2 (ja) | 2000-08-11 | 2012-09-05 | キヤノンアネルバ株式会社 | 真空処理装置 |
JP6024372B2 (ja) | 2012-10-12 | 2016-11-16 | Tdk株式会社 | 基板処理装置および基板処理チャンバモジュール |
CN110323161B (zh) * | 2018-03-30 | 2023-06-06 | 芝浦机械电子株式会社 | 有机膜形成装置以及有机膜制造方法 |
CN110616406A (zh) * | 2018-11-29 | 2019-12-27 | 爱发科豪威光电薄膜科技(深圳)有限公司 | 磁控溅射镀膜机 |
-
1998
- 1998-10-12 JP JP28962498A patent/JP3844608B2/ja not_active Expired - Fee Related
-
1999
- 1999-10-11 KR KR10-1999-0043798A patent/KR100508744B1/ko active IP Right Grant
- 1999-10-12 TW TW088117608A patent/TW439100B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20000028980A (ko) | 2000-05-25 |
JP3844608B2 (ja) | 2006-11-15 |
JP2000119848A (ja) | 2000-04-25 |
TW439100B (en) | 2001-06-07 |
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