KR100503188B1 - 일렉트로 루미네센스 표시 장치의 제조 방법 - Google Patents
일렉트로 루미네센스 표시 장치의 제조 방법 Download PDFInfo
- Publication number
- KR100503188B1 KR100503188B1 KR10-2001-0014243A KR20010014243A KR100503188B1 KR 100503188 B1 KR100503188 B1 KR 100503188B1 KR 20010014243 A KR20010014243 A KR 20010014243A KR 100503188 B1 KR100503188 B1 KR 100503188B1
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting layer
- display device
- mask
- organic
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000005401 electroluminescence Methods 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 28
- 230000008021 deposition Effects 0.000 abstract description 23
- 239000000463 material Substances 0.000 abstract description 23
- 239000000758 substrate Substances 0.000 abstract description 14
- 238000003892 spreading Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 51
- 238000007740 vapor deposition Methods 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- FBARBMWUOUNTMI-UHFFFAOYSA-N 4-[4-(3-methylanilino)phenyl]-n-(3-methylphenyl)-2,3-diphenylaniline Chemical compound CC1=CC=CC(NC=2C=CC(=CC=2)C=2C(=C(C=3C=CC=CC=3)C(NC=3C=C(C)C=CC=3)=CC=2)C=2C=CC=CC=2)=C1 FBARBMWUOUNTMI-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
Description
Claims (3)
- 표시 화소를 이루는 양극과 음극과의 사이에 적층된 각 색을 발광하는 발광층을 구비한 일렉트로 루미네센스 표시 장치의 제조 방법에 있어서,상기 양극상에, 두께 h와, 인접하는 표시 화소 사이의 개구 폭 d와의 관계가, h>n·d(n은 1보다 크고 2.5 이하인 수)인 마스크를 배치하여 상기 각 색의 발광층을 형성함과 함께, 상기 마스크와 상기 발광층의 간격은 0 ㎛ 보다 크고 20 ㎛ 이하인 것을 특징으로 하는 일렉트로 루미네센스 표시 장치의 제조 방법.
- 삭제
- 제1항에 있어서, 상기 마스크는 금속 또는 반도체로 이루어지는 것을 특징으로 하는 일렉트로 루미네센스 표시 장치의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-096094 | 2000-03-31 | ||
JP2000096094A JP2001284046A (ja) | 2000-03-31 | 2000-03-31 | エレクトロルミネッセンス表示装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010094984A KR20010094984A (ko) | 2001-11-03 |
KR100503188B1 true KR100503188B1 (ko) | 2005-07-25 |
Family
ID=18610905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0014243A KR100503188B1 (ko) | 2000-03-31 | 2001-03-20 | 일렉트로 루미네센스 표시 장치의 제조 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6686215B2 (ko) |
JP (1) | JP2001284046A (ko) |
KR (1) | KR100503188B1 (ko) |
TW (1) | TW578440B (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020197393A1 (en) * | 2001-06-08 | 2002-12-26 | Hideaki Kuwabara | Process of manufacturing luminescent device |
JP4078813B2 (ja) * | 2001-06-12 | 2008-04-23 | ソニー株式会社 | 成膜装置および成膜方法 |
KR20030002947A (ko) * | 2001-07-03 | 2003-01-09 | 엘지전자 주식회사 | 풀칼라 유기 el 표시소자 및 제조방법 |
JP4047626B2 (ja) * | 2002-05-16 | 2008-02-13 | 株式会社 日立ディスプレイズ | 画像表示装置 |
KR101193185B1 (ko) * | 2009-12-29 | 2012-10-19 | 삼성디스플레이 주식회사 | 패턴 형성 방법 및 유기 발광 소자의 제조방법 |
CN107369784B (zh) * | 2017-08-31 | 2019-11-26 | 深圳市华星光电半导体显示技术有限公司 | Oled-tft基板及其制造方法、显示面板 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10241860A (ja) * | 1997-02-21 | 1998-09-11 | Idemitsu Kosan Co Ltd | 多色発光装置 |
KR19980078049A (ko) * | 1997-04-24 | 1998-11-16 | 구자홍 | 다색 전계 발광 디스플레이 어레이 패널 및 그 제조방법 |
KR20000064839A (ko) * | 1997-02-04 | 2000-11-06 | 도미나가 가즈토 | 유기 전압 발광 표시 장치 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1050478A (ja) * | 1996-04-19 | 1998-02-20 | Toray Ind Inc | 有機電界発光素子およびその製造方法 |
JP2815004B2 (ja) * | 1996-10-30 | 1998-10-27 | 日本電気株式会社 | 表示装置およびその製造方法 |
JPH10298738A (ja) * | 1997-04-21 | 1998-11-10 | Mitsubishi Chem Corp | シャドウマスク及び蒸着方法 |
JPH10319870A (ja) * | 1997-05-15 | 1998-12-04 | Nec Corp | シャドウマスク及びこれを用いたカラー薄膜el表示装置の製造方法 |
US5937272A (en) | 1997-06-06 | 1999-08-10 | Eastman Kodak Company | Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate |
JPH1145781A (ja) * | 1997-07-28 | 1999-02-16 | Casio Comput Co Ltd | 配線の形成方法 |
JP3539229B2 (ja) * | 1997-10-15 | 2004-07-07 | 東レ株式会社 | 有機電界発光装置の製造方法 |
JP2000068053A (ja) * | 1998-08-17 | 2000-03-03 | Matsushita Electric Ind Co Ltd | 有機発光デバイスの製造方法 |
-
2000
- 2000-03-31 JP JP2000096094A patent/JP2001284046A/ja active Pending
-
2001
- 2001-03-20 KR KR10-2001-0014243A patent/KR100503188B1/ko active IP Right Grant
- 2001-03-28 TW TW090107326A patent/TW578440B/zh not_active IP Right Cessation
- 2001-03-28 US US09/820,139 patent/US6686215B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000064839A (ko) * | 1997-02-04 | 2000-11-06 | 도미나가 가즈토 | 유기 전압 발광 표시 장치 |
JPH10241860A (ja) * | 1997-02-21 | 1998-09-11 | Idemitsu Kosan Co Ltd | 多色発光装置 |
KR19980078049A (ko) * | 1997-04-24 | 1998-11-16 | 구자홍 | 다색 전계 발광 디스플레이 어레이 패널 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
TW578440B (en) | 2004-03-01 |
US6686215B2 (en) | 2004-02-03 |
JP2001284046A (ja) | 2001-10-12 |
KR20010094984A (ko) | 2001-11-03 |
US20010055844A1 (en) | 2001-12-27 |
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