KR100501707B1 - 유기전계발광표시장치 - Google Patents
유기전계발광표시장치 Download PDFInfo
- Publication number
- KR100501707B1 KR100501707B1 KR10-2003-0008868A KR20030008868A KR100501707B1 KR 100501707 B1 KR100501707 B1 KR 100501707B1 KR 20030008868 A KR20030008868 A KR 20030008868A KR 100501707 B1 KR100501707 B1 KR 100501707B1
- Authority
- KR
- South Korea
- Prior art keywords
- organic
- film
- display device
- tft
- light emitting
- Prior art date
Links
- 239000010408 film Substances 0.000 claims abstract description 132
- 239000013039 cover film Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 abstract description 10
- 238000005452 bending Methods 0.000 abstract description 3
- 238000005401 electroluminescence Methods 0.000 description 83
- 229910052782 aluminium Inorganic materials 0.000 description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 24
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- 239000002585 base Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
경사각(도) | 불량품 수 | 양품율 |
90 | 20 | 0% |
70 | 20 | 0% |
50 | 10 | 50% |
30 | 2 | 90% |
20 | 1 | 95% |
Claims (6)
- 투명기판; 및 투명기판상에 놓이며, 각각이 TFT영역 및 발광영역을 구비하는 복수의 화소들을 포함하고, 상기 TFT영역은 TFT를 수용하고 상기 TFT를 덮는 에지커버막을 구비하고, 상기 발광영역은 유기EL소자와 상기 유기EL소자를 노출시키기 위해 상기 에지커버막에 형성된 창을 가지고, 상기 창에 인접한 상기 에지커버막의 가장자리는 30도 이하의 경사각을 가지는 유기전계발광(EL)표시장치.
- 제1항에 있어서, 상기 발광영역은 상기 유기EL소자 아래에 놓인 단차완화막을 포함하는 유기EL표시장치.
- 제1항에 있어서, 상기 단차완화막은 상기 투명기판상에 형성된 절연막 위에 형성되는 유기EL표시장치.
- 제1항에 있어서, 상기 투명기판은 상기 TFT영역 및 상기 발광영역 사이에서 실질적으로 단차를 가지지 않는 유기EL표시장치.
- 제1항에 있어서, 상기 경사각은 20도 이하인 유기EL표시장치.
- 제1항에 있어서, 상기 경사각은 후굽기처리를 사용하는 테이퍼처리에 의해 얻어지는 유기EL표시장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00034180 | 2002-02-12 | ||
JP2002034180A JP4094863B2 (ja) | 2002-02-12 | 2002-02-12 | 有機el表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030068455A KR20030068455A (ko) | 2003-08-21 |
KR100501707B1 true KR100501707B1 (ko) | 2005-07-18 |
Family
ID=27654910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2003-0008868A KR100501707B1 (ko) | 2002-02-12 | 2003-02-12 | 유기전계발광표시장치 |
Country Status (3)
Country | Link |
---|---|
US (2) | US6836069B2 (ko) |
JP (1) | JP4094863B2 (ko) |
KR (1) | KR100501707B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8940564B1 (en) | 2013-07-09 | 2015-01-27 | Samsung Display Co., Ltd. | Method of manufacturing organic light-emitting diode (OLED) display |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4094863B2 (ja) * | 2002-02-12 | 2008-06-04 | 三星エスディアイ株式会社 | 有機el表示装置 |
JP4425531B2 (ja) * | 2002-08-21 | 2010-03-03 | 富士通株式会社 | 有機el装置及びその製造方法 |
JP4232415B2 (ja) * | 2002-08-30 | 2009-03-04 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法、電子機器 |
US20040124421A1 (en) * | 2002-09-20 | 2004-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
KR100611159B1 (ko) | 2003-11-29 | 2006-08-09 | 삼성에스디아이 주식회사 | 유기전계 발광표시장치 |
JP4278499B2 (ja) * | 2003-12-01 | 2009-06-17 | 三菱電機株式会社 | 表示装置 |
JP2006054111A (ja) * | 2004-08-12 | 2006-02-23 | Sony Corp | 表示装置 |
TWI467531B (zh) | 2004-09-16 | 2015-01-01 | Semiconductor Energy Lab | 顯示裝置和其驅動方法 |
US8350466B2 (en) | 2004-09-17 | 2013-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
US8772783B2 (en) * | 2004-10-14 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR100686345B1 (ko) * | 2004-10-27 | 2007-02-22 | 삼성에스디아이 주식회사 | 평판표시소자 및 그 제조방법 |
KR100712111B1 (ko) * | 2004-12-14 | 2007-04-27 | 삼성에스디아이 주식회사 | 보조 전극 라인을 구비하는 유기전계발광소자 및 그의제조 방법 |
KR100683791B1 (ko) * | 2005-07-30 | 2007-02-20 | 삼성에스디아이 주식회사 | 박막 트랜지스터 기판 및 이를 구비한 평판 디스플레이장치 |
KR100659765B1 (ko) | 2005-09-08 | 2006-12-19 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
KR100805154B1 (ko) * | 2006-09-15 | 2008-02-21 | 삼성에스디아이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR100900444B1 (ko) * | 2007-06-27 | 2009-06-02 | 엘지전자 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
KR100875102B1 (ko) | 2007-09-03 | 2008-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 |
US7977678B2 (en) * | 2007-12-21 | 2011-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
JP2010062120A (ja) * | 2008-08-06 | 2010-03-18 | Mitsubishi Chemicals Corp | 有機電界発光素子の隔壁用感光性組成物および有機電界発光表示装置 |
JP5251358B2 (ja) * | 2008-08-25 | 2013-07-31 | ソニー株式会社 | 表示装置 |
TWI607670B (zh) | 2009-01-08 | 2017-12-01 | 半導體能源研究所股份有限公司 | 發光裝置及電子裝置 |
CN105609509A (zh) * | 2009-12-04 | 2016-05-25 | 株式会社半导体能源研究所 | 显示装置 |
TWI615952B (zh) * | 2015-08-07 | 2018-02-21 | Japan Display Inc | 顯示裝置及其製造方法 |
KR102566630B1 (ko) * | 2015-12-30 | 2023-08-16 | 엘지디스플레이 주식회사 | 유기발광표시장치 |
US10998296B2 (en) * | 2017-12-07 | 2021-05-04 | Zkw Group Gmbh | In-vehicle display device using semiconductor light-emitting device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000172198A (ja) * | 1998-12-01 | 2000-06-23 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
JP2000260571A (ja) * | 1999-03-11 | 2000-09-22 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
US6246179B1 (en) * | 1998-12-01 | 2001-06-12 | Sanyo Electric Co., Ltd. | Emissive element and display device using such element |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5684365A (en) * | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
JPH1154268A (ja) * | 1997-08-08 | 1999-02-26 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンスディスプレイ装置 |
JP3230669B2 (ja) * | 1998-11-26 | 2001-11-19 | 日本電気株式会社 | 液晶表示装置用薄膜トランジスタ基板およびその製造方法 |
EP1157421A1 (en) * | 1999-02-05 | 2001-11-28 | Alien Technology Corporation | Apparatuses and methods for forming assemblies |
JP2001043981A (ja) | 1999-05-24 | 2001-02-16 | Toray Ind Inc | 表示装置およびその製造方法 |
JP2000340359A (ja) | 1999-05-28 | 2000-12-08 | Tdk Corp | 有機el素子の駆動装置および有機el表示装置 |
JP4627822B2 (ja) * | 1999-06-23 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
TW540251B (en) * | 1999-09-24 | 2003-07-01 | Semiconductor Energy Lab | EL display device and method for driving the same |
TW531901B (en) * | 2000-04-27 | 2003-05-11 | Semiconductor Energy Lab | Light emitting device |
JP2002025781A (ja) | 2000-07-07 | 2002-01-25 | Nec Corp | 有機el素子およびその製造方法 |
JP3695308B2 (ja) * | 2000-10-27 | 2005-09-14 | 日本電気株式会社 | アクティブマトリクス有機el表示装置及びその製造方法 |
US6590346B1 (en) * | 2001-07-16 | 2003-07-08 | Alien Technology Corporation | Double-metal background driven displays |
TWI258317B (en) * | 2002-01-25 | 2006-07-11 | Semiconductor Energy Lab | A display device and method for manufacturing thereof |
JP4094863B2 (ja) * | 2002-02-12 | 2008-06-04 | 三星エスディアイ株式会社 | 有機el表示装置 |
-
2002
- 2002-02-12 JP JP2002034180A patent/JP4094863B2/ja not_active Expired - Lifetime
-
2003
- 2003-02-11 US US10/361,616 patent/US6836069B2/en not_active Expired - Lifetime
- 2003-02-12 KR KR10-2003-0008868A patent/KR100501707B1/ko active IP Right Grant
-
2004
- 2004-12-03 US US11/002,662 patent/US7301275B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000172198A (ja) * | 1998-12-01 | 2000-06-23 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
US6246179B1 (en) * | 1998-12-01 | 2001-06-12 | Sanyo Electric Co., Ltd. | Emissive element and display device using such element |
JP2000260571A (ja) * | 1999-03-11 | 2000-09-22 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8940564B1 (en) | 2013-07-09 | 2015-01-27 | Samsung Display Co., Ltd. | Method of manufacturing organic light-emitting diode (OLED) display |
Also Published As
Publication number | Publication date |
---|---|
JP2003233332A (ja) | 2003-08-22 |
KR20030068455A (ko) | 2003-08-21 |
US20050099117A1 (en) | 2005-05-12 |
JP4094863B2 (ja) | 2008-06-04 |
US6836069B2 (en) | 2004-12-28 |
US7301275B2 (en) | 2007-11-27 |
US20030151358A1 (en) | 2003-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100501707B1 (ko) | 유기전계발광표시장치 | |
JP4674197B2 (ja) | 有機電界発光表示装置及びその製造方法 | |
JP4113197B2 (ja) | 有機電界発光表示装置 | |
US6492778B1 (en) | Electroluminescence display device | |
US7598111B2 (en) | Thin film transistor and method of manufacturing the same | |
US8076844B2 (en) | Organic EL display device and manufacturing method of the same | |
US8063550B2 (en) | Flat panel display with taper reducing layer | |
US7615922B2 (en) | Electro-luminescent display device and method for fabricating the same | |
KR100903101B1 (ko) | 유기전계 발광표시장치 및 그의 제조방법 | |
KR100600848B1 (ko) | 평판표시장치 및 그 제조방법 | |
US20050116231A1 (en) | Thin film transistor and method of manufacturing the same | |
US6850000B1 (en) | Thin film transistor organic light emitting diode structure | |
US20200335554A1 (en) | Optical sensor device, method for fabricating the same, display device | |
KR100728129B1 (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
US20080048191A1 (en) | Organic light emitting display device and method of fabricating the same | |
US6646308B2 (en) | Flat panel display device | |
US12004380B2 (en) | Organic light-emitting diode display device and manufacturing method thereof | |
KR20050099027A (ko) | 보조 전극을 사용하여 상부 전극 전압 강하를 방지하는전면 발광 유기 전계 발광 표시 장치 및 그의 제조 방법 | |
JP4617749B2 (ja) | 表示装置の製造方法 | |
US7705532B2 (en) | Dual plate type organic electroluminescent device and method of fabricating the same | |
US20030160562A1 (en) | Electroluminescent display device | |
KR100595210B1 (ko) | 탑-이미션 방식의 유기 el 소자 및 그 제조 방법 | |
KR100728790B1 (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
KR100739579B1 (ko) | 유기 발광 표시 장치 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
N231 | Notification of change of applicant | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130628 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20140701 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20150701 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20160629 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20170704 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20180702 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20190701 Year of fee payment: 15 |