KR100476849B1 - 전계 형성 영역을 포함한 반도체 스위칭 소자 - Google Patents

전계 형성 영역을 포함한 반도체 스위칭 소자 Download PDF

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Publication number
KR100476849B1
KR100476849B1 KR10-2001-7003683A KR20017003683A KR100476849B1 KR 100476849 B1 KR100476849 B1 KR 100476849B1 KR 20017003683 A KR20017003683 A KR 20017003683A KR 100476849 B1 KR100476849 B1 KR 100476849B1
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KR
South Korea
Prior art keywords
semiconductor
region
semiconductor body
switching element
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-7003683A
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English (en)
Korean (ko)
Other versions
KR20010075296A (ko
Inventor
하인리히 브루너
예뇌 티하니
프란츠 아우어바흐
Original Assignee
인피니언 테크놀로지스 아게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 인피니언 테크놀로지스 아게 filed Critical 인피니언 테크놀로지스 아게
Publication of KR20010075296A publication Critical patent/KR20010075296A/ko
Application granted granted Critical
Publication of KR100476849B1 publication Critical patent/KR100476849B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies

Landscapes

  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR10-2001-7003683A 1998-09-23 1999-09-01 전계 형성 영역을 포함한 반도체 스위칭 소자 Expired - Fee Related KR100476849B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19843659A DE19843659A1 (de) 1998-09-23 1998-09-23 Halbleiterbauelement mit strukturiertem Halbleiterkörper
DE19843659.9 1998-09-23

Publications (2)

Publication Number Publication Date
KR20010075296A KR20010075296A (ko) 2001-08-09
KR100476849B1 true KR100476849B1 (ko) 2005-03-18

Family

ID=7881992

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-7003683A Expired - Fee Related KR100476849B1 (ko) 1998-09-23 1999-09-01 전계 형성 영역을 포함한 반도체 스위칭 소자

Country Status (6)

Country Link
US (1) US6891204B2 (enExample)
EP (1) EP1116276B1 (enExample)
JP (1) JP3853595B2 (enExample)
KR (1) KR100476849B1 (enExample)
DE (2) DE19843659A1 (enExample)
WO (1) WO2000017931A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6642558B1 (en) * 2000-03-20 2003-11-04 Koninklijke Philips Electronics N.V. Method and apparatus of terminating a high voltage solid state device
US6677641B2 (en) * 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US7126186B2 (en) * 2002-12-20 2006-10-24 Infineon Technolgies Ag Compensation component and process for producing the component
DE10361136B4 (de) * 2003-12-23 2005-10-27 Infineon Technologies Ag Halbleiterdiode und IGBT
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
JP2008187125A (ja) * 2007-01-31 2008-08-14 Toshiba Corp 半導体装置
JP5487658B2 (ja) * 2009-03-17 2014-05-07 富士電機株式会社 半導体装置およびその製造方法
JP6111673B2 (ja) * 2012-07-25 2017-04-12 住友電気工業株式会社 炭化珪素半導体装置
JP6064614B2 (ja) * 2013-01-21 2017-01-25 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6075120B2 (ja) * 2013-03-01 2017-02-08 住友電気工業株式会社 炭化珪素半導体装置
JP6092760B2 (ja) * 2013-12-05 2017-03-08 株式会社豊田中央研究所 縦型半導体装置
US9385181B2 (en) 2014-01-23 2016-07-05 Infineon Technologies Ag Semiconductor diode and method of manufacturing a semiconductor diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175598A (en) * 1978-01-06 1992-12-29 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
US4980742A (en) * 1988-05-31 1990-12-25 Siemens Aktiengesellschaft Turn-off thyristor
DE58907758D1 (de) * 1988-09-20 1994-07-07 Siemens Ag Planarer pn-Übergang hoher Spannungsfestigkeit.
GB9207860D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor component
US5945701A (en) * 1997-12-19 1999-08-31 Northrop Grumman Corporation Static induction transistor

Also Published As

Publication number Publication date
DE19843659A1 (de) 2000-04-06
KR20010075296A (ko) 2001-08-09
US20010045567A1 (en) 2001-11-29
DE59914610D1 (enExample) 2008-03-06
WO2000017931A1 (de) 2000-03-30
JP2002525872A (ja) 2002-08-13
EP1116276A1 (de) 2001-07-18
US6891204B2 (en) 2005-05-10
JP3853595B2 (ja) 2006-12-06
EP1116276B1 (de) 2008-01-16

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