KR100444756B1 - 저질량서스셉터 - Google Patents
저질량서스셉터 Download PDFInfo
- Publication number
- KR100444756B1 KR100444756B1 KR10-1998-0701287A KR19980701287A KR100444756B1 KR 100444756 B1 KR100444756 B1 KR 100444756B1 KR 19980701287 A KR19980701287 A KR 19980701287A KR 100444756 B1 KR100444756 B1 KR 100444756B1
- Authority
- KR
- South Korea
- Prior art keywords
- susceptor
- wafer
- thermal mass
- mass
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US263295P | 1995-08-22 | 1995-08-22 | |
| US60/002,632 | 1995-08-22 | ||
| US08/621,627 US6086680A (en) | 1995-08-22 | 1996-03-26 | Low-mass susceptor |
| US08/621,627 | 1996-03-26 | ||
| US8/621,627 | 1996-03-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990044054A KR19990044054A (ko) | 1999-06-25 |
| KR100444756B1 true KR100444756B1 (ko) | 2004-11-11 |
Family
ID=26670648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-1998-0701287A Expired - Lifetime KR100444756B1 (ko) | 1995-08-22 | 1996-08-22 | 저질량서스셉터 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6086680A (https=) |
| EP (1) | EP0846335A1 (https=) |
| JP (1) | JPH11512232A (https=) |
| KR (1) | KR100444756B1 (https=) |
| WO (1) | WO1997008743A1 (https=) |
Families Citing this family (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT411304B (de) * | 1997-06-18 | 2003-11-25 | Sez Ag | Träger für scheibenförmige gegenstände, insbesondere silizium-wafer |
| EP1036407A1 (en) * | 1997-11-03 | 2000-09-20 | ASM America, Inc. | Method of processing wafers with low mass support |
| DE69813014T2 (de) | 1997-11-03 | 2004-02-12 | Asm America Inc., Phoenix | Verbesserte kleinmassige waferhaleeinrichtung |
| EP1308989A3 (en) * | 1997-11-03 | 2007-12-26 | ASM America, Inc. | Improved low mass wafer support system |
| JP4475804B2 (ja) * | 1997-11-03 | 2010-06-09 | エーエスエム アメリカ インコーポレイテッド | 長寿命高温プロセスチャンバ |
| US7244677B2 (en) | 1998-02-04 | 2007-07-17 | Semitool. Inc. | Method for filling recessed micro-structures with metallization in the production of a microelectronic device |
| US6565729B2 (en) | 1998-03-20 | 2003-05-20 | Semitool, Inc. | Method for electrochemically depositing metal on a semiconductor workpiece |
| US6497801B1 (en) | 1998-07-10 | 2002-12-24 | Semitool Inc | Electroplating apparatus with segmented anode array |
| JP2000058470A (ja) * | 1998-08-07 | 2000-02-25 | Ushio Inc | 光照射式加熱装置のガードリング |
| JP3076791B2 (ja) * | 1998-10-19 | 2000-08-14 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置 |
| US7189318B2 (en) | 1999-04-13 | 2007-03-13 | Semitool, Inc. | Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
| US7438788B2 (en) | 1999-04-13 | 2008-10-21 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
| US7351314B2 (en) | 2003-12-05 | 2008-04-01 | Semitool, Inc. | Chambers, systems, and methods for electrochemically processing microfeature workpieces |
| US7264698B2 (en) | 1999-04-13 | 2007-09-04 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
| EP1194613A4 (en) | 1999-04-13 | 2006-08-23 | Semitool Inc | PROCESSOR OF PARTS HAVING IMPROVED TREATMENT FLUID FLOW PROCESSING CHAMBER |
| US6916412B2 (en) | 1999-04-13 | 2005-07-12 | Semitool, Inc. | Adaptable electrochemical processing chamber |
| US7351315B2 (en) | 2003-12-05 | 2008-04-01 | Semitool, Inc. | Chambers, systems, and methods for electrochemically processing microfeature workpieces |
| US7585398B2 (en) | 1999-04-13 | 2009-09-08 | Semitool, Inc. | Chambers, systems, and methods for electrochemically processing microfeature workpieces |
| US7020537B2 (en) | 1999-04-13 | 2006-03-28 | Semitool, Inc. | Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
| US20020062792A1 (en) * | 1999-07-14 | 2002-05-30 | Seh America, Inc. | Wafer support device and reactor system for epitaxial layer growth |
| US6454852B2 (en) | 1999-07-14 | 2002-09-24 | Seh America, Inc. | High efficiency silicon wafer optimized for advanced semiconductor devices |
| US6632277B2 (en) | 1999-07-14 | 2003-10-14 | Seh America, Inc. | Optimized silicon wafer gettering for advanced semiconductor devices |
| US6375749B1 (en) | 1999-07-14 | 2002-04-23 | Seh America, Inc. | Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth |
| US6395085B2 (en) | 1999-07-14 | 2002-05-28 | Seh America, Inc. | Purity silicon wafer for use in advanced semiconductor devices |
| US6471913B1 (en) | 2000-02-09 | 2002-10-29 | Semitool, Inc. | Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature |
| US6780374B2 (en) | 2000-12-08 | 2004-08-24 | Semitool, Inc. | Method and apparatus for processing a microelectronic workpiece at an elevated temperature |
| US6339016B1 (en) * | 2000-06-30 | 2002-01-15 | Memc Electronic Materials, Inc. | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
| AU2001282879A1 (en) | 2000-07-08 | 2002-01-21 | Semitool, Inc. | Methods and apparatus for processing microelectronic workpieces using metrology |
| JP2002231649A (ja) * | 2001-01-30 | 2002-08-16 | Tokyo Electron Ltd | 加熱処理装置とウェーハ支持リング |
| US6506252B2 (en) | 2001-02-07 | 2003-01-14 | Emcore Corporation | Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
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| US7090751B2 (en) | 2001-08-31 | 2006-08-15 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
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| US20050081788A1 (en) * | 2002-03-15 | 2005-04-21 | Holger Jurgensen | Device for depositing thin layers on a substrate |
| US7022192B2 (en) * | 2002-09-04 | 2006-04-04 | Tokyo Electron Limited | Semiconductor wafer susceptor |
| JP4348542B2 (ja) * | 2004-08-24 | 2009-10-21 | 信越半導体株式会社 | 石英治具及び半導体製造装置 |
| JP2008546203A (ja) * | 2005-06-01 | 2008-12-18 | マットソン テクノロジー インコーポレイテッド | パルス化された加熱処理の間に熱収支を最適化する方法 |
| TWI327761B (en) * | 2005-10-07 | 2010-07-21 | Rohm & Haas Elect Mat | Method for making semiconductor wafer and wafer holding article |
| EP1793021A3 (en) * | 2005-12-02 | 2009-01-14 | Rohm and Haas Electronic Materials LLC | Method for semiconductor processing using silicon carbide article |
| US20080314319A1 (en) * | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
| US8034410B2 (en) * | 2007-07-17 | 2011-10-11 | Asm International N.V. | Protective inserts to line holes in parts for semiconductor process equipment |
| US20110114022A1 (en) * | 2007-12-12 | 2011-05-19 | Veeco Instruments Inc. | Wafer carrier with hub |
| US8021487B2 (en) | 2007-12-12 | 2011-09-20 | Veeco Instruments Inc. | Wafer carrier with hub |
| US8404049B2 (en) * | 2007-12-27 | 2013-03-26 | Memc Electronic Materials, Inc. | Epitaxial barrel susceptor having improved thickness uniformity |
| US20090165721A1 (en) * | 2007-12-27 | 2009-07-02 | Memc Electronic Materials, Inc. | Susceptor with Support Bosses |
| JP2009267017A (ja) * | 2008-04-24 | 2009-11-12 | Sumitomo Electric Ind Ltd | 気相成長装置および半導体基板の製造方法 |
| US20100098519A1 (en) * | 2008-10-17 | 2010-04-22 | Memc Electronic Materials, Inc. | Support for a semiconductor wafer in a high temperature environment |
| US8801857B2 (en) | 2008-10-31 | 2014-08-12 | Asm America, Inc. | Self-centering susceptor ring assembly |
| DE102011007682A1 (de) * | 2011-04-19 | 2012-10-25 | Siltronic Ag | Suszeptor zum Abstützen einer Halbleiterscheibe und Verfahren zum Abscheiden einer Schicht auf einer Vorderseite einer Halbleiterscheibe |
| NL2008751A (en) | 2011-06-06 | 2012-12-10 | Asml Netherlands Bv | Temperature sensing probe, burl plate, lithographic apparatus and method. |
| US11085112B2 (en) * | 2011-10-28 | 2021-08-10 | Asm Ip Holding B.V. | Susceptor with ring to limit backside deposition |
| TW201437421A (zh) * | 2013-02-20 | 2014-10-01 | Applied Materials Inc | 用於旋轉料架原子層沉積之裝置以及方法 |
| US10068791B2 (en) | 2013-03-08 | 2018-09-04 | Semiconductor Components Industries, Llc | Wafer susceptor for forming a semiconductor device and method therefor |
| WO2015112969A1 (en) | 2014-01-27 | 2015-07-30 | Veeco Instruments. Inc. | Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems |
| EP3275008B1 (en) * | 2015-03-25 | 2022-02-23 | Applied Materials, Inc. | Chamber components for epitaxial growth apparatus |
| US10204790B2 (en) | 2015-07-28 | 2019-02-12 | Asm Ip Holding B.V. | Methods for thin film deposition |
| US20170029948A1 (en) * | 2015-07-28 | 2017-02-02 | Asm Ip Holding B.V. | Methods and apparatuses for temperature-indexed thin film deposition |
| US11421321B2 (en) | 2015-07-28 | 2022-08-23 | Asm Ip Holding B.V. | Apparatuses for thin film deposition |
| JP2020080365A (ja) * | 2018-11-13 | 2020-05-28 | 三星電子株式会社Samsung Electronics Co.,Ltd. | ウェハーステージ、半導体製造装置、ウェハーステージの製造方法 |
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| USD914620S1 (en) | 2019-01-17 | 2021-03-30 | Asm Ip Holding B.V. | Vented susceptor |
| USD920936S1 (en) | 2019-01-17 | 2021-06-01 | Asm Ip Holding B.V. | Higher temperature vented susceptor |
| TWI845682B (zh) | 2019-05-22 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 工件基座主體 |
| US11764101B2 (en) | 2019-10-24 | 2023-09-19 | ASM IP Holding, B.V. | Susceptor for semiconductor substrate processing |
| US11600470B2 (en) * | 2019-12-27 | 2023-03-07 | Applied Materials, Inc. | Targeted heat control systems |
| TWI861334B (zh) | 2020-01-21 | 2024-11-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於均勻沉積之具有側壁隆起的基座及處理結晶基材之方法 |
| TWI888578B (zh) | 2020-06-23 | 2025-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 基座及反應腔室 |
| TWI889919B (zh) | 2020-10-21 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於可流動間隙填充之方法及裝置 |
| USD1031676S1 (en) | 2020-12-04 | 2024-06-18 | Asm Ip Holding B.V. | Combined susceptor, support, and lift system |
| TW202247334A (zh) | 2021-01-29 | 2022-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在反應室內定位製程套組組件的固定裝置、半導體處理系統及方法 |
| JP7734211B2 (ja) * | 2021-05-12 | 2025-09-04 | アプライド マテリアルズ インコーポレイテッド | 低質量基板支持体 |
| US12497697B2 (en) * | 2021-10-08 | 2025-12-16 | Applied Materials, Inc. | Layer with discrete islands formed on a substrate support |
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-
1996
- 1996-03-26 US US08/621,627 patent/US6086680A/en not_active Expired - Lifetime
- 1996-08-22 EP EP96930571A patent/EP0846335A1/en not_active Withdrawn
- 1996-08-22 WO PCT/US1996/013575 patent/WO1997008743A1/en not_active Ceased
- 1996-08-22 KR KR10-1998-0701287A patent/KR100444756B1/ko not_active Expired - Lifetime
- 1996-08-22 JP JP9510427A patent/JPH11512232A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990044054A (ko) | 1999-06-25 |
| JPH11512232A (ja) | 1999-10-19 |
| WO1997008743A1 (en) | 1997-03-06 |
| EP0846335A1 (en) | 1998-06-10 |
| US6086680A (en) | 2000-07-11 |
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