KR100427852B1 - 유도및다중정전결합된플라즈마반응기 - Google Patents

유도및다중정전결합된플라즈마반응기 Download PDF

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Publication number
KR100427852B1
KR100427852B1 KR1019960014361A KR19960014361A KR100427852B1 KR 100427852 B1 KR100427852 B1 KR 100427852B1 KR 1019960014361 A KR1019960014361 A KR 1019960014361A KR 19960014361 A KR19960014361 A KR 19960014361A KR 100427852 B1 KR100427852 B1 KR 100427852B1
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KR
South Korea
Prior art keywords
electrodes
chamber
power
induction coil
capacitive
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Expired - Fee Related
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KR1019960014361A
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English (en)
Korean (ko)
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KR960043009A (ko
Inventor
이 얀
하나와 히로이
시아오빙 마 다이아나
제이아오 인 제랄드
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR960043009A publication Critical patent/KR960043009A/ko
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Publication of KR100427852B1 publication Critical patent/KR100427852B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019960014361A 1995-05-08 1996-05-03 유도및다중정전결합된플라즈마반응기 Expired - Fee Related KR100427852B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/436,513 1995-05-08
US08/436,513 US5710486A (en) 1995-05-08 1995-05-08 Inductively and multi-capacitively coupled plasma reactor

Publications (2)

Publication Number Publication Date
KR960043009A KR960043009A (ko) 1996-12-21
KR100427852B1 true KR100427852B1 (ko) 2004-09-01

Family

ID=23732717

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960014361A Expired - Fee Related KR100427852B1 (ko) 1995-05-08 1996-05-03 유도및다중정전결합된플라즈마반응기

Country Status (5)

Country Link
US (2) US5710486A (enExample)
EP (1) EP0742577A3 (enExample)
JP (1) JP3814012B2 (enExample)
KR (1) KR100427852B1 (enExample)
TW (1) TW302592B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101007822B1 (ko) 2003-07-14 2011-01-13 주성엔지니어링(주) 혼합형 플라즈마 발생 장치
KR20170028145A (ko) * 2015-09-03 2017-03-13 에이피시스템 주식회사 기판 처리 장치

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JP3814012B2 (ja) 2006-08-23
US5710486A (en) 1998-01-20
US6020686A (en) 2000-02-01
EP0742577A3 (en) 1999-01-13
JPH0974089A (ja) 1997-03-18
KR960043009A (ko) 1996-12-21
TW302592B (enExample) 1997-04-11

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