JP3814012B2 - 誘導的かつ多容量的に結合されたプラズマリアクタ - Google Patents

誘導的かつ多容量的に結合されたプラズマリアクタ Download PDF

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Publication number
JP3814012B2
JP3814012B2 JP11378296A JP11378296A JP3814012B2 JP 3814012 B2 JP3814012 B2 JP 3814012B2 JP 11378296 A JP11378296 A JP 11378296A JP 11378296 A JP11378296 A JP 11378296A JP 3814012 B2 JP3814012 B2 JP 3814012B2
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Japan
Prior art keywords
high frequency
plasma reactor
induction coil
pair
vacuum chamber
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Expired - Fee Related
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JP11378296A
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English (en)
Japanese (ja)
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JPH0974089A (ja
Inventor
ヤー ヤン
ハナワ ヒロジ
シャオビン マ ダイアナ
ジャーヤオ イエン ジェラルド
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP11378296A 1995-05-08 1996-05-08 誘導的かつ多容量的に結合されたプラズマリアクタ Expired - Fee Related JP3814012B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/436513 1995-05-08
US08/436,513 US5710486A (en) 1995-05-08 1995-05-08 Inductively and multi-capacitively coupled plasma reactor

Publications (2)

Publication Number Publication Date
JPH0974089A JPH0974089A (ja) 1997-03-18
JP3814012B2 true JP3814012B2 (ja) 2006-08-23

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JP11378296A Expired - Fee Related JP3814012B2 (ja) 1995-05-08 1996-05-08 誘導的かつ多容量的に結合されたプラズマリアクタ

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Country Link
US (2) US5710486A (enExample)
EP (1) EP0742577A3 (enExample)
JP (1) JP3814012B2 (enExample)
KR (1) KR100427852B1 (enExample)
TW (1) TW302592B (enExample)

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Also Published As

Publication number Publication date
TW302592B (enExample) 1997-04-11
EP0742577A2 (en) 1996-11-13
US6020686A (en) 2000-02-01
KR100427852B1 (ko) 2004-09-01
JPH0974089A (ja) 1997-03-18
EP0742577A3 (en) 1999-01-13
US5710486A (en) 1998-01-20
KR960043009A (ko) 1996-12-21

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