KR100400968B1 - 스퍼터 장치 및 성막 방법 - Google Patents

스퍼터 장치 및 성막 방법 Download PDF

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Publication number
KR100400968B1
KR100400968B1 KR10-2000-0063763A KR20000063763A KR100400968B1 KR 100400968 B1 KR100400968 B1 KR 100400968B1 KR 20000063763 A KR20000063763 A KR 20000063763A KR 100400968 B1 KR100400968 B1 KR 100400968B1
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KR
South Korea
Prior art keywords
target
substrate
film
ion
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2000-0063763A
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English (en)
Korean (ko)
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KR20010051319A (ko
Inventor
와다준이찌
마쯔야마히데또
가따따도미따
사까따아쯔꼬
와따나베고이찌
Original Assignee
가부시끼가이샤 도시바
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Publication of KR20010051319A publication Critical patent/KR20010051319A/ko
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Publication of KR100400968B1 publication Critical patent/KR100400968B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3457—Sputtering using other particles than noble gas ions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR10-2000-0063763A 1999-10-29 2000-10-28 스퍼터 장치 및 성막 방법 Expired - Fee Related KR100400968B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP31029899 1999-10-29
JP1999-310298 1999-10-29
JP2000166059A JP4021601B2 (ja) 1999-10-29 2000-06-02 スパッタ装置および成膜方法
JP2000-166059 2000-06-02

Publications (2)

Publication Number Publication Date
KR20010051319A KR20010051319A (ko) 2001-06-25
KR100400968B1 true KR100400968B1 (ko) 2003-10-10

Family

ID=26566260

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0063763A Expired - Fee Related KR100400968B1 (ko) 1999-10-29 2000-10-28 스퍼터 장치 및 성막 방법

Country Status (4)

Country Link
US (1) US6423192B1 (https=)
JP (1) JP4021601B2 (https=)
KR (1) KR100400968B1 (https=)
TW (1) TW503470B (https=)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6355183B1 (en) * 1998-09-04 2002-03-12 Matsushita Electric Industrial Co., Ltd. Apparatus and method for plasma etching
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
WO2003042424A1 (en) * 2000-10-10 2003-05-22 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8696875B2 (en) 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US20030116427A1 (en) * 2001-08-30 2003-06-26 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6610184B2 (en) 2001-11-14 2003-08-26 Applied Materials, Inc. Magnet array in conjunction with rotating magnetron for plasma sputtering
US6627050B2 (en) * 2000-07-28 2003-09-30 Applied Materials, Inc. Method and apparatus for depositing a tantalum-containing layer on a substrate
JP4703828B2 (ja) * 2000-09-07 2011-06-15 株式会社アルバック スパッタリング装置及び薄膜製造方法
JP4503194B2 (ja) * 2001-02-16 2010-07-14 アプライド マテリアルズ インコーポレイテッド 気相堆積装置及び方法
WO2002097937A1 (en) * 2001-03-23 2002-12-05 Tokyo Electron Limited Inductively coupled high-density plasma source
US6537928B1 (en) * 2002-02-19 2003-03-25 Asm Japan K.K. Apparatus and method for forming low dielectric constant film
US7041201B2 (en) * 2001-11-14 2006-05-09 Applied Materials, Inc. Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith
US7122844B2 (en) * 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US6846396B2 (en) * 2002-08-08 2005-01-25 Applied Materials, Inc. Active magnetic shielding
GB2406582A (en) * 2002-08-13 2005-04-06 Trikon Technologies Ltd Acoustic resonators
US8366830B2 (en) * 2003-03-04 2013-02-05 Cree, Inc. Susceptor apparatus for inverted type MOCVD reactor
KR100784381B1 (ko) * 2004-07-23 2007-12-11 삼성전자주식회사 증착 장치 및 방법
US7294574B2 (en) * 2004-08-09 2007-11-13 Applied Materials, Inc. Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement
US7351656B2 (en) * 2005-01-21 2008-04-01 Kabushiki Kaihsa Toshiba Semiconductor device having oxidized metal film and manufacture method of the same
JP4762187B2 (ja) 2007-03-28 2011-08-31 株式会社東芝 マグネトロンスパッタリング装置および半導体装置の製造方法
KR100882906B1 (ko) * 2007-04-17 2009-02-10 삼성모바일디스플레이주식회사 스퍼터링 장치
JP2009182140A (ja) * 2008-01-30 2009-08-13 Tokyo Electron Ltd 薄膜の形成方法、プラズマ成膜装置及び記憶媒体
JP5118532B2 (ja) * 2008-03-28 2013-01-16 新明和工業株式会社 スパッタリング装置およびスパッタリング方法
JP2009256747A (ja) * 2008-04-18 2009-11-05 Canon Anelva Corp マグネトロンスパッタリング装置及び薄膜の製造法
KR20100032644A (ko) * 2008-09-18 2010-03-26 삼성전자주식회사 선택적 플라즈마 처리를 이용한 반도체 소자의 금속배선 형성방법
US20100096253A1 (en) * 2008-10-22 2010-04-22 Applied Materials, Inc Pvd cu seed overhang re-sputtering with enhanced cu ionization
SG171398A1 (en) * 2008-12-15 2011-07-28 Ulvac Inc Sputtering apparatus and sputtering method
GB0901157D0 (en) * 2009-01-26 2009-03-11 Aviza Technology Ltd A method of plasma vapour deposition
JP5347868B2 (ja) * 2009-09-24 2013-11-20 東京エレクトロン株式会社 載置台構造及びプラズマ成膜装置
JP2011179068A (ja) * 2010-03-01 2011-09-15 Ulvac Japan Ltd 金属薄膜の形成方法
WO2011130092A1 (en) * 2010-04-14 2011-10-20 The Regents Of The University Of California Method and apparatus for sputtering with a plasma lens
JP5654939B2 (ja) * 2011-04-20 2015-01-14 株式会社アルバック 成膜装置
US9279179B2 (en) * 2012-02-06 2016-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Multi coil target design
US9640359B2 (en) 2012-08-09 2017-05-02 Vactronix Scientific, Inc. Inverted cylindrical magnetron (ICM) system and methods of use
TW201502302A (zh) * 2013-07-15 2015-01-16 Metal Ind Res & Dev Ct 可微調整製程參數之濺鍍製程控制系統及其方法
KR20160003871U (ko) 2015-04-30 2016-11-09 에스엘 주식회사 차량용 램프
CN109473331B (zh) * 2017-09-08 2022-11-25 北京北方华创微电子装备有限公司 腔室屏蔽装置和半导体处理腔
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
JP6998239B2 (ja) * 2018-03-01 2022-01-18 株式会社アルバック 成膜装置
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
WO2020090164A1 (ja) * 2018-10-30 2020-05-07 株式会社アルバック 真空処理装置
US11476145B2 (en) * 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
CN115679271B (zh) * 2021-07-22 2024-09-20 北京北方华创微电子装备有限公司 半导体工艺腔室
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
TW202603193A (zh) * 2024-03-11 2026-01-16 日商東京威力科創股份有限公司 Pvd成膜方法及pvd成膜裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149338A (en) 1978-05-15 1979-11-22 Anelva Corp Thin film forming method by sputtering
JP2515731B2 (ja) 1985-10-25 1996-07-10 株式会社日立製作所 薄膜形成装置および薄膜形成方法
CZ281073B6 (cs) 1993-09-03 1996-06-12 Fyzikální ústav AVČR Způsob rozprašování materiálu katody
JP2914644B2 (ja) 1993-09-22 1999-07-05 アネルバ株式会社 集積回路の配線方法及び集積回路における穴又は溝の埋め込み配線方法並びにマルチチャンバー基板処理装置
JP2912181B2 (ja) 1995-02-28 1999-06-28 広島日本電気株式会社 スパッタリング装置
JP2904263B2 (ja) * 1995-12-04 1999-06-14 日本電気株式会社 スパッタ装置
JPH09256149A (ja) 1996-03-22 1997-09-30 Tokyo Electron Ltd スパッタリング装置およびスパッタリング方法
JP3957810B2 (ja) 1997-03-27 2007-08-15 株式会社アルバック 銅薄膜形成方法
US6692617B1 (en) 1997-05-08 2004-02-17 Applied Materials, Inc. Sustained self-sputtering reactor having an increased density plasma
US5897752A (en) 1997-05-20 1999-04-27 Applied Materials, Inc. Wafer bias ring in a sustained self-sputtering reactor
JPH111770A (ja) * 1997-06-06 1999-01-06 Anelva Corp スパッタリング装置及びスパッタリング方法

Also Published As

Publication number Publication date
TW503470B (en) 2002-09-21
US6423192B1 (en) 2002-07-23
JP2001192824A (ja) 2001-07-17
JP4021601B2 (ja) 2007-12-12
KR20010051319A (ko) 2001-06-25

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