KR100367535B1 - 집적회로제조방법 - Google Patents

집적회로제조방법 Download PDF

Info

Publication number
KR100367535B1
KR100367535B1 KR1019950061417A KR19950061417A KR100367535B1 KR 100367535 B1 KR100367535 B1 KR 100367535B1 KR 1019950061417 A KR1019950061417 A KR 1019950061417A KR 19950061417 A KR19950061417 A KR 19950061417A KR 100367535 B1 KR100367535 B1 KR 100367535B1
Authority
KR
South Korea
Prior art keywords
raised
substrate
type
measurements
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950061417A
Other languages
English (en)
Korean (ko)
Other versions
KR960026746A (ko
Inventor
부르스 빈델 제프리
얼 슈로프 데니스
안쏘니 스티비 프레드
제이. 데어 리차드
이. 플루 래리
Original Assignee
에이티 앤드 티 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이티 앤드 티 코포레이션 filed Critical 에이티 앤드 티 코포레이션
Publication of KR960026746A publication Critical patent/KR960026746A/ko
Application granted granted Critical
Publication of KR100367535B1 publication Critical patent/KR100367535B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/852—Manufacture, treatment, or detection of nanostructure with scanning probe for detection of specific nanostructure sample or nanostructure-related property
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/868—Scanning probe structure with optical means
    • Y10S977/869—Optical microscope
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/88—Manufacture, treatment, or detection of nanostructure with arrangement, process, or apparatus for testing
    • Y10S977/881—Microscopy or spectroscopy, e.g. sem, tem
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
KR1019950061417A 1994-12-29 1995-12-28 집적회로제조방법 Expired - Fee Related KR100367535B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36635794A 1994-12-29 1994-12-29
US366,357 1994-12-29

Publications (2)

Publication Number Publication Date
KR960026746A KR960026746A (ko) 1996-07-22
KR100367535B1 true KR100367535B1 (ko) 2003-03-06

Family

ID=23442681

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950061417A Expired - Fee Related KR100367535B1 (ko) 1994-12-29 1995-12-28 집적회로제조방법

Country Status (6)

Country Link
US (1) US5804460A (enExample)
EP (1) EP0720216B1 (enExample)
KR (1) KR100367535B1 (enExample)
DE (1) DE69523274D1 (enExample)
SG (1) SG34349A1 (enExample)
TW (1) TW289141B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0144489B1 (ko) * 1995-10-04 1998-07-01 김주용 반도체소자의 공정결함 검사방법
US6054710A (en) * 1997-12-18 2000-04-25 Cypress Semiconductor Corp. Method and apparatus for obtaining two- or three-dimensional information from scanning electron microscopy
US6326618B1 (en) 1999-07-02 2001-12-04 Agere Systems Guardian Corp. Method of analyzing semiconductor surface with patterned feature using line width metrology
US6265235B1 (en) 1999-08-25 2001-07-24 Lucent Technologies, Inc. Method of sectioning of photoresist for shape evaluation
US6235440B1 (en) 1999-11-12 2001-05-22 Taiwan Semiconductor Manufacturing Company Method to control gate CD
US6570157B1 (en) * 2000-06-09 2003-05-27 Advanced Micro Devices, Inc. Multi-pitch and line calibration for mask and wafer CD-SEM system
US6573497B1 (en) * 2000-06-30 2003-06-03 Advanced Micro Devices, Inc. Calibration of CD-SEM by e-beam induced current measurement
US6573498B1 (en) * 2000-06-30 2003-06-03 Advanced Micro Devices, Inc. Electric measurement of reference sample in a CD-SEM and method for calibration
AU2001281127A1 (en) * 2000-09-27 2002-04-08 Advanced Micro Devices Inc. Fault detection method and apparatus using multiple dimension measurements
US6621081B2 (en) * 2001-01-10 2003-09-16 International Business Machines Corporation Method of pole tip sample preparation using FIB
US7027146B1 (en) * 2002-06-27 2006-04-11 Kla-Tencor Technologies Corp. Methods for forming a calibration standard and calibration standards for inspection systems
US6862545B1 (en) * 2003-04-03 2005-03-01 Taiwan Semiconductor Manufacturing Co., Ltd Linewidth measurement tool calibration method employing linewidth standard
JP5361137B2 (ja) * 2007-02-28 2013-12-04 株式会社日立ハイテクノロジーズ 荷電粒子ビーム測長装置
US20130245985A1 (en) * 2012-03-14 2013-09-19 Kla-Tencor Corporation Calibration Of An Optical Metrology System For Critical Dimension Application Matching
US10458912B2 (en) * 2016-08-31 2019-10-29 Kla-Tencor Corporation Model based optical measurements of semiconductor structures with anisotropic dielectric permittivity
US12548734B2 (en) 2022-12-22 2026-02-10 Applied Materials Israel Ltd. In-line depth measurements by AFM
CN116525480B (zh) * 2023-05-10 2023-11-10 广东空天科技研究院(南沙) 一种基于显微图像的激光栅线成形质量自动检测方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434673A (en) * 1977-08-23 1979-03-14 Hitachi Ltd Micro-distance measuring device for scan-type electronic microscope
JPS6282314A (ja) * 1985-10-08 1987-04-15 Hitachi Ltd 光度差ステレオ計測方式
US4766411A (en) * 1986-05-29 1988-08-23 U.S. Philips Corporation Use of compositionally modulated multilayer thin films as resistive material
GB8622976D0 (en) * 1986-09-24 1986-10-29 Trialsite Ltd Scanning electron microscopes
JPH01311551A (ja) * 1988-06-08 1989-12-15 Toshiba Corp パターン形状測定装置
JPH0687003B2 (ja) * 1990-02-09 1994-11-02 株式会社日立製作所 走査型トンネル顕微鏡付き走査型電子顕微鏡
US5229607A (en) * 1990-04-19 1993-07-20 Hitachi, Ltd. Combination apparatus having a scanning electron microscope therein
US5140164A (en) * 1991-01-14 1992-08-18 Schlumberger Technologies, Inc. Ic modification with focused ion beam system
US5106771A (en) * 1991-06-05 1992-04-21 At&T Bell Laboratories GaAs MESFETs with enhanced Schottky barrier
US5280437A (en) * 1991-06-28 1994-01-18 Digital Equipment Corporation Structure and method for direct calibration of registration measurement systems to actual semiconductor wafer process topography
IT1251393B (it) * 1991-09-04 1995-05-09 St Microelectronics Srl Procedimento per la realizzazione di strutture metrologiche particolarmente per l'analisi dell'accuratezza di strumenti di misura di allineamento su substrati processati.
US5373232A (en) * 1992-03-13 1994-12-13 The United States Of America As Represented By The Secretary Of Commerce Method of and articles for accurately determining relative positions of lithographic artifacts
US5444242A (en) * 1992-09-29 1995-08-22 Physical Electronics Inc. Scanning and high resolution electron spectroscopy and imaging

Also Published As

Publication number Publication date
EP0720216A3 (en) 1997-05-21
EP0720216A2 (en) 1996-07-03
SG34349A1 (en) 1996-12-06
KR960026746A (ko) 1996-07-22
EP0720216B1 (en) 2001-10-17
US5804460A (en) 1998-09-08
DE69523274D1 (de) 2001-11-22
TW289141B (enExample) 1996-10-21

Similar Documents

Publication Publication Date Title
KR100367535B1 (ko) 집적회로제조방법
US6218264B1 (en) Method of producing a calibration standard for 2-D and 3-D profilometry in the sub-nanometer range
US5701013A (en) Wafer metrology pattern integrating both overlay and critical dimension features for SEM or AFM measurements
US7595482B2 (en) Standard component for length measurement, method for producing the same, and electron beam metrology system using the same
US6570157B1 (en) Multi-pitch and line calibration for mask and wafer CD-SEM system
US5920067A (en) Monocrystalline test and reference structures, and use for calibrating instruments
US6730444B2 (en) Needle comb reticle pattern for critical dimension and registration measurements using a registration tool and methods for using same
US6936931B2 (en) Overlay key, method of manufacturing the same and method of measuring an overlay degree using the same
US7576317B1 (en) Calibration standard for a dual beam (FIB/SEM) machine
US20090127723A1 (en) AIM-Compatible Targets for Use with Methods of Inspecting and Optionally Reworking Summed Photolithography Patterns Resulting from Plurally-Overlaid Patterning Steps During Mass Production of Semiconductor Devices
Misumi et al. Submicrometre-pitch intercomparison between optical diffraction, scanning electron microscope and atomic force microscope
US5684301A (en) Monocrystalline test structures, and use for calibrating instruments
JPH0321901B2 (enExample)
US7361941B1 (en) Calibration standards and methods
JP3353051B2 (ja) 集積回路構造の線幅測定
Nakayama et al. New submicron dimension reference for electron-beam metrology system
JPH09162102A (ja) アライメントマーク検出方法
EP0628809A1 (en) Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it
KR20080086693A (ko) 반도체 소자의 오버레이 측정 방법
JP2570130B2 (ja) 膜厚測定用パターンおよび膜厚測定方法
US7989228B2 (en) Method and structure for sample preparation for scanning electron microscopes in integrated circuit manufacturing
Mizuno et al. Evaluation of the long-term stability of critical-dimension measurement scanning electron microscopes using a calibration standard
JPH11340131A (ja) 半導体集積回路の製造方法
KR20090070983A (ko) 원통형 ｃｄ표준 웨이퍼를 이용한 ｃｄ측정 방법
KR100283483B1 (ko) 중첩도 측정용 타겟 제조 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20121130

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20131129

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20141227

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20141227

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000