KR100363462B1 - 스핀밸브형 자기저항 효과소자와 그 제조방법 - Google Patents

스핀밸브형 자기저항 효과소자와 그 제조방법 Download PDF

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Publication number
KR100363462B1
KR100363462B1 KR1020000003976A KR20000003976A KR100363462B1 KR 100363462 B1 KR100363462 B1 KR 100363462B1 KR 1020000003976 A KR1020000003976 A KR 1020000003976A KR 20000003976 A KR20000003976 A KR 20000003976A KR 100363462 B1 KR100363462 B1 KR 100363462B1
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KR
South Korea
Prior art keywords
layer
magnetic
magnetic layer
coercive force
magnetic field
Prior art date
Application number
KR1020000003976A
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English (en)
Korean (ko)
Other versions
KR20000053639A (ko
Inventor
하세가와나오야
Original Assignee
알프스 덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 알프스 덴키 가부시키가이샤 filed Critical 알프스 덴키 가부시키가이샤
Publication of KR20000053639A publication Critical patent/KR20000053639A/ko
Application granted granted Critical
Publication of KR100363462B1 publication Critical patent/KR100363462B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3932—Magnetic biasing films
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/398—Specially shaped layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
KR1020000003976A 1999-01-27 2000-01-27 스핀밸브형 자기저항 효과소자와 그 제조방법 KR100363462B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11019120A JP2000215422A (ja) 1999-01-27 1999-01-27 スピンバルブ型磁気抵抗効果素子およびその製造方法とその素子を備えた薄膜磁気ヘッド
JP99-019120 1999-01-27

Publications (2)

Publication Number Publication Date
KR20000053639A KR20000053639A (ko) 2000-08-25
KR100363462B1 true KR100363462B1 (ko) 2002-11-30

Family

ID=11990619

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000003976A KR100363462B1 (ko) 1999-01-27 2000-01-27 스핀밸브형 자기저항 효과소자와 그 제조방법

Country Status (3)

Country Link
JP (1) JP2000215422A (ja)
KR (1) KR100363462B1 (ja)
DE (1) DE10003471A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6538859B1 (en) * 2000-07-31 2003-03-25 International Business Machines Corporation Giant magnetoresistive sensor with an AP-coupled low Hk free layer
JP2002111095A (ja) 2000-09-26 2002-04-12 Alps Electric Co Ltd 磁気抵抗効果型素子
JP3576111B2 (ja) 2001-03-12 2004-10-13 株式会社東芝 磁気抵抗効果素子
KR20030073600A (ko) * 2002-03-12 2003-09-19 학교법인고려중앙학원 스핀밸브형 자기저항소자
JP2004296000A (ja) * 2003-03-27 2004-10-21 Hitachi Ltd 磁気抵抗効果型ヘッド、及びその製造方法
KR100733782B1 (ko) * 2005-01-19 2007-07-02 고려대학교 산학협력단 ＣｏＦｅＺｒ을 포함하는 거대 자기 저항 소자의 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0687917A2 (en) * 1994-06-15 1995-12-20 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0687917A2 (en) * 1994-06-15 1995-12-20 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor

Also Published As

Publication number Publication date
KR20000053639A (ko) 2000-08-25
DE10003471A1 (de) 2000-08-03
JP2000215422A (ja) 2000-08-04

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