KR100362501B1 - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR100362501B1 KR100362501B1 KR10-1998-0046564A KR19980046564A KR100362501B1 KR 100362501 B1 KR100362501 B1 KR 100362501B1 KR 19980046564 A KR19980046564 A KR 19980046564A KR 100362501 B1 KR100362501 B1 KR 100362501B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor chip
- circuit board
- board sheet
- metal lead
- semiconductor device
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (5)
- 대략 평판형으로 형성된 메탈리드와;상기 메탈리드에 저면이 접착제로 접착되며, 상면에는 다수의 입출력패드가 형성되어 있는 반도체칩과;상기 반도체칩의 상부에 그 반도체칩의 넓이보다 더 넓게 접착제로 접착되어 있되, 상기 반도체칩의 입출력패드와 대응되는 위치에는 소정의 관통부가 형성된 회로기판시트와;상기 관통부 내측에서 회로기판시트와 반도체칩의 입출력패드를 연결하는 도전성와이어와;상기 도전성와이어 등을 외부의 환경으로부터 보호하기 위해 회로기판시트의 관통부에 충진된 봉지재와;상기 회로기판시트의 둘레를 지지하도록 상기 반도체칩의 외주연에 위치된 회로기판시트의 하단부에 접착제로 접착된 보강제와;상기 회로기판시트의 상부에 융착됨으로써 차후 마더보드에 실장되는 솔더볼을 포함하여 이루어진 반도체 장치.
- 제1항에 있어서, 상기 메탈리드와 반도체칩의 저면을 접착시키는 접착제는 열도전성 접착제인 것을 특징으로 하는 반도체 장치.
- 재1항에 있어서, 상기 메탈리드의 외곽에는 상부로 돌출된 돌출턱이 형성되어 있고, 상기 돌출턱은 보강제의 하단부와 열도전성 접착제로 접착된 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 메탈리드의 둘레 상면은 보강제의 하단부와 직접 접촉된 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 메탈리드는 그 외곽에 상부로 연장된 연장부가 형성되어 있고, 상기 연장부 내측이 회로기판시트의 측부 및 보강제의 측부와 직접 접촉된 것을 특징으로 하는 반도체 장치.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1998-0046564A KR100362501B1 (ko) | 1998-10-31 | 1998-10-31 | 반도체장치 |
JP11171708A JP2000138262A (ja) | 1998-10-31 | 1999-06-17 | チップスケ―ル半導体パッケ―ジ及びその製造方法 |
US09/422,027 US6462274B1 (en) | 1998-10-31 | 1999-10-20 | Chip-scale semiconductor package of the fan-out type and method of manufacturing such packages |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1998-0046564A KR100362501B1 (ko) | 1998-10-31 | 1998-10-31 | 반도체장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000028359A KR20000028359A (ko) | 2000-05-25 |
KR100362501B1 true KR100362501B1 (ko) | 2003-02-14 |
Family
ID=19556719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-1998-0046564A KR100362501B1 (ko) | 1998-10-31 | 1998-10-31 | 반도체장치 |
Country Status (1)
Country | Link |
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KR (1) | KR100362501B1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100585226B1 (ko) | 2004-03-10 | 2006-06-01 | 삼성전자주식회사 | 방열판을 갖는 반도체 패키지 및 그를 이용한 적층 패키지 |
KR100873666B1 (ko) | 2007-06-25 | 2008-12-11 | 대덕전자 주식회사 | 다층 인쇄 회로 기판을 위한 양면 코어 기판 제조 방법 |
-
1998
- 1998-10-31 KR KR10-1998-0046564A patent/KR100362501B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20000028359A (ko) | 2000-05-25 |
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