KR100360640B1 - 병합디바이스를지원하기위한바이씨모스(BiCMOS)및이의형성방법 - Google Patents

병합디바이스를지원하기위한바이씨모스(BiCMOS)및이의형성방법 Download PDF

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KR100360640B1
KR100360640B1 KR1019940032689A KR19940032689A KR100360640B1 KR 100360640 B1 KR100360640 B1 KR 100360640B1 KR 1019940032689 A KR1019940032689 A KR 1019940032689A KR 19940032689 A KR19940032689 A KR 19940032689A KR 100360640 B1 KR100360640 B1 KR 100360640B1
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forming
region
source
gate
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Korean (ko)
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KR950021503A (ko
Inventor
로버트하워드에클런드
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텍사스 인스트루먼츠 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/009—Bi-MOS

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
KR1019940032689A 1993-12-03 1994-12-03 병합디바이스를지원하기위한바이씨모스(BiCMOS)및이의형성방법 Expired - Lifetime KR100360640B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/161960 1993-12-03
US08/161,960 US5441903A (en) 1993-12-03 1993-12-03 BiCMOS process for supporting merged devices

Publications (2)

Publication Number Publication Date
KR950021503A KR950021503A (ko) 1995-07-26
KR100360640B1 true KR100360640B1 (ko) 2003-01-10

Family

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Application Number Title Priority Date Filing Date
KR1019940032689A Expired - Lifetime KR100360640B1 (ko) 1993-12-03 1994-12-03 병합디바이스를지원하기위한바이씨모스(BiCMOS)및이의형성방법

Country Status (6)

Country Link
US (2) US5441903A (enExample)
EP (1) EP0656660B1 (enExample)
JP (1) JP3594346B2 (enExample)
KR (1) KR100360640B1 (enExample)
DE (1) DE69433638T2 (enExample)
TW (1) TW258830B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335773A (ja) * 1994-06-10 1995-12-22 Hitachi Ltd 半導体集積回路装置の製造方法
US5620908A (en) * 1994-09-19 1997-04-15 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device comprising BiCMOS transistor
KR100223600B1 (ko) * 1997-01-23 1999-10-15 김덕중 반도체 장치 및 그 제조 방법
GB2340243A (en) * 1998-07-30 2000-02-16 P Shaw Trailer apparatus for measuring ground density
JP4003438B2 (ja) * 2001-11-07 2007-11-07 株式会社デンソー 半導体装置の製造方法および半導体装置
JP4342579B2 (ja) * 2006-08-31 2009-10-14 三洋電機株式会社 半導体装置
SE537230C2 (sv) * 2013-05-16 2015-03-10 Klas Håkan Eklund Med K Eklund Innovation F Bipolär transistorförstärkarkrets med isolerad gate
US11094806B2 (en) * 2017-12-29 2021-08-17 Texas Instruments Incorporated Fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868135A (en) * 1988-12-21 1989-09-19 International Business Machines Corporation Method for manufacturing a Bi-CMOS device
US5101257A (en) * 1991-07-01 1992-03-31 Motorola, Inc. Semiconductor device having merged bipolar and MOS transistors and process for making the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855244A (en) * 1987-07-02 1989-08-08 Texas Instruments Incorporated Method of making vertical PNP transistor in merged bipolar/CMOS technology
SE461428B (sv) * 1988-06-16 1990-02-12 Ericsson Telefon Ab L M Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena
JPH02101747A (ja) * 1988-10-11 1990-04-13 Toshiba Corp 半導体集積回路とその製造方法
US5281544A (en) * 1990-07-23 1994-01-25 Seiko Epson Corporation Method of manufacturing planar type polar transistors and combination bipolar/MIS type transistors
US5334549A (en) * 1993-08-13 1994-08-02 Texas Instruments Incorporated BiCMOS process that supports merged devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868135A (en) * 1988-12-21 1989-09-19 International Business Machines Corporation Method for manufacturing a Bi-CMOS device
US5101257A (en) * 1991-07-01 1992-03-31 Motorola, Inc. Semiconductor device having merged bipolar and MOS transistors and process for making the same

Also Published As

Publication number Publication date
JPH07321240A (ja) 1995-12-08
EP0656660B1 (en) 2004-03-24
DE69433638D1 (de) 2004-04-29
JP3594346B2 (ja) 2004-11-24
KR950021503A (ko) 1995-07-26
TW258830B (enExample) 1995-10-01
US5811860A (en) 1998-09-22
US5441903A (en) 1995-08-15
DE69433638T2 (de) 2004-08-05
EP0656660A3 (en) 1998-01-07
EP0656660A2 (en) 1995-06-07

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