KR100360387B1 - 새로운 패시베이션 구조 및 그것의 제조방법 - Google Patents

새로운 패시베이션 구조 및 그것의 제조방법 Download PDF

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Publication number
KR100360387B1
KR100360387B1 KR1020007007183A KR20007007183A KR100360387B1 KR 100360387 B1 KR100360387 B1 KR 100360387B1 KR 1020007007183 A KR1020007007183 A KR 1020007007183A KR 20007007183 A KR20007007183 A KR 20007007183A KR 100360387 B1 KR100360387 B1 KR 100360387B1
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dielectric layer
hard mask
forming
capped
substrate
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Korean (ko)
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KR20010033663A (ko
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보어마크티
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인텔 코오퍼레이션
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    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Formation Of Insulating Films (AREA)
KR1020007007183A 1997-12-31 1998-12-15 새로운 패시베이션 구조 및 그것의 제조방법 Expired - Lifetime KR100360387B1 (ko)

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Application Number Priority Date Filing Date Title
US09/001,551 US6143638A (en) 1997-12-31 1997-12-31 Passivation structure and its method of fabrication
US09/001,551 1997-12-31
PCT/US1998/026689 WO1999034442A1 (en) 1997-12-31 1998-12-15 A novel passivation structure and its method of fabrication

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KR100360387B1 true KR100360387B1 (ko) 2002-11-13

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US6143638A (en) 2000-11-07
US6566737B2 (en) 2003-05-20
JP2002500445A (ja) 2002-01-08
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KR20010033663A (ko) 2001-04-25

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