KR100351913B1 - 반도체 소자의 제조 방법 - Google Patents
반도체 소자의 제조 방법 Download PDFInfo
- Publication number
- KR100351913B1 KR100351913B1 KR1020000074546A KR20000074546A KR100351913B1 KR 100351913 B1 KR100351913 B1 KR 100351913B1 KR 1020000074546 A KR1020000074546 A KR 1020000074546A KR 20000074546 A KR20000074546 A KR 20000074546A KR 100351913 B1 KR100351913 B1 KR 100351913B1
- Authority
- KR
- South Korea
- Prior art keywords
- reoxidation
- semiconductor device
- film
- gate
- forming
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000010405 reoxidation reaction Methods 0.000 claims abstract description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 239000012535 impurity Substances 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 229920005591 polysilicon Polymers 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000009825 accumulation Methods 0.000 claims abstract description 6
- 125000006850 spacer group Chemical group 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 239000000969 carrier Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (4)
- 반도체 기판상에 게이트 산화막, 폴리실리콘층을 형성하고 선택적으로 패터닝하여 게이트 전극을 형성하는 단계;재산화 공정으로 전면에 재산화막을 형성하는 단계;NO 어닐 공정으로 상기 재산화막내에 질소를 축적시켜 질소 축적 재산화막을 형성하는 단계;게이트 전극을 마스크로 하여 저농도 불순물을 주입하는 단계;게이트 스페이서를 형성하고 고농도 불순물을 주입하여 소오스/드레인을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 1 항에 있어서, 재산화 공정을 800 ~ 850℃의 온도로 습식 O2처리를 하여 진행하여 20 ~ 35Å의 두께로 재산화막을 형성하는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 1 항에 있어서, 어닐 공정을 800 ~ 850℃의 온도로 10 ~ 30분간 진행하는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 1 항 또는 제 3 항에 있어서, NO 가스 대신에 N2O 또는 NH3가스를 사용하여 어닐 공정을 진행하는 것을 특징으로 하는 반도체 소자의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000074546A KR100351913B1 (ko) | 2000-12-08 | 2000-12-08 | 반도체 소자의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000074546A KR100351913B1 (ko) | 2000-12-08 | 2000-12-08 | 반도체 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020045188A KR20020045188A (ko) | 2002-06-19 |
KR100351913B1 true KR100351913B1 (ko) | 2002-09-12 |
Family
ID=27680479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000074546A KR100351913B1 (ko) | 2000-12-08 | 2000-12-08 | 반도체 소자의 제조 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100351913B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101013544B1 (ko) * | 2003-07-11 | 2011-02-14 | 매그나칩 반도체 유한회사 | 반도체 소자의 제조방법 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100654554B1 (ko) * | 2005-12-29 | 2006-12-05 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조방법 |
KR100774790B1 (ko) * | 2006-08-11 | 2007-11-07 | 동부일렉트로닉스 주식회사 | 더미 스페이서를 구비한 반도체 소자 제조방법 |
-
2000
- 2000-12-08 KR KR1020000074546A patent/KR100351913B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101013544B1 (ko) * | 2003-07-11 | 2011-02-14 | 매그나칩 반도체 유한회사 | 반도체 소자의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
KR20020045188A (ko) | 2002-06-19 |
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