KR100350815B1 - 유전체 형성방법 - Google Patents

유전체 형성방법 Download PDF

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Publication number
KR100350815B1
KR100350815B1 KR1019950031774A KR19950031774A KR100350815B1 KR 100350815 B1 KR100350815 B1 KR 100350815B1 KR 1019950031774 A KR1019950031774 A KR 1019950031774A KR 19950031774 A KR19950031774 A KR 19950031774A KR 100350815 B1 KR100350815 B1 KR 100350815B1
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KR
South Korea
Prior art keywords
dielectric
fluorine
gate electrode
nitrogen
fluorinated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019950031774A
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English (en)
Korean (ko)
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KR960015815A (ko
Inventor
흐씽-후앙트쏀
필립제이.토빈
Original Assignee
모토로라 인코포레이티드
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Publication of KR960015815A publication Critical patent/KR960015815A/ko
Application granted granted Critical
Publication of KR100350815B1 publication Critical patent/KR100350815B1/ko
Assigned to 프리스케일 세미컨덕터, 인크 reassignment 프리스케일 세미컨덕터, 인크 권리의 전부이전등록 Assignors: 모토로라 인코포레이티드
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
KR1019950031774A 1994-10-03 1995-09-26 유전체 형성방법 Expired - Lifetime KR100350815B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US316,175 1994-10-03
US08/316,175 US5571734A (en) 1994-10-03 1994-10-03 Method for forming a fluorinated nitrogen containing dielectric

Publications (2)

Publication Number Publication Date
KR960015815A KR960015815A (ko) 1996-05-22
KR100350815B1 true KR100350815B1 (ko) 2002-12-16

Family

ID=23227843

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031774A Expired - Lifetime KR100350815B1 (ko) 1994-10-03 1995-09-26 유전체 형성방법

Country Status (5)

Country Link
US (1) US5571734A (https=)
EP (1) EP0706204A3 (https=)
JP (1) JPH08116059A (https=)
KR (1) KR100350815B1 (https=)
TW (1) TW290726B (https=)

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US5440168A (en) * 1993-02-22 1995-08-08 Ryoden Semiconductor System Engineering Corporation Thin-film transistor with suppressed off-current and Vth
US5837585A (en) * 1996-07-23 1998-11-17 Vanguard International Semiconductor Corporation Method of fabricating flash memory cell
US5846888A (en) * 1996-09-27 1998-12-08 Micron Technology, Inc. Method for in-situ incorporation of desirable impurities into high pressure oxides
JP3312102B2 (ja) * 1996-11-27 2002-08-05 シャープ株式会社 不揮発性半導体記憶装置の製造方法
KR100252545B1 (ko) * 1996-12-20 2000-04-15 김영환 트랜지스터 및 그 제조방법
US5960302A (en) * 1996-12-31 1999-09-28 Lucent Technologies, Inc. Method of making a dielectric for an integrated circuit
US6130164A (en) * 1997-03-26 2000-10-10 Advanced Micro Devices, Inc. Semiconductor device having gate oxide formed by selective oxide removal and method of manufacture thereof
US5851892A (en) * 1997-05-07 1998-12-22 Cypress Semiconductor Corp. Fabrication sequence employing an oxide formed with minimized inducted charge and/or maximized breakdown voltage
TW405155B (en) * 1997-07-15 2000-09-11 Toshiba Corp Semiconductor device and its manufacture
TW345695B (en) * 1997-07-17 1998-11-21 United Microelectronics Corp Process for producing gate oxide layer
US7105411B1 (en) 1997-12-18 2006-09-12 Micron Technology, Inc. Methods of forming a transistor gate
AU1933199A (en) 1997-12-18 1999-07-05 Micron Technology, Inc. Semiconductor processing method and field effect transistor
FR2775119B1 (fr) * 1998-02-19 2000-04-07 France Telecom Procede pour limiter l'interdiffusion dans un dispositif semi-conducteur a grille composite si/si 1-x ge x, o inferieur a x inferieur ou egal a 1.
US6033998A (en) * 1998-03-09 2000-03-07 Lsi Logic Corporation Method of forming variable thickness gate dielectrics
JP2000269492A (ja) * 1999-03-16 2000-09-29 Nec Corp 半導体装置の製造方法
US6211045B1 (en) * 1999-11-30 2001-04-03 Vlsi Technology, Inc. Incorporation of nitrogen-based gas in polysilicon gate re-oxidation to improve hot carrier performance
US6136680A (en) * 2000-01-21 2000-10-24 Taiwan Semiconductor Manufacturing Company Methods to improve copper-fluorinated silica glass interconnects
JP2001257344A (ja) * 2000-03-10 2001-09-21 Toshiba Corp 半導体装置及び半導体装置の製造方法
US6432786B2 (en) * 2000-08-10 2002-08-13 National Science Council Method of forming a gate oxide layer with an improved ability to resist the process damage
US6825133B2 (en) * 2003-01-22 2004-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer
US6780730B2 (en) 2002-01-31 2004-08-24 Infineon Technologies Ag Reduction of negative bias temperature instability in narrow width PMOS using F2 implantation
KR100467019B1 (ko) * 2002-07-05 2005-01-24 삼성전자주식회사 자기정렬 트렌치 소자분리구조를 갖는 플래시 메모리 소자및 그 제조방법
US7566929B2 (en) 2002-07-05 2009-07-28 Samsung Electronics Co., Ltd. Nonvolatile memory devices having floating gate electrodes with nitrogen-doped layers on portions thereof
JP3851896B2 (ja) 2002-09-27 2006-11-29 株式会社東芝 半導体装置の製造方法
US6720213B1 (en) * 2003-01-15 2004-04-13 International Business Machines Corporation Low-K gate spacers by fluorine implantation
US6797555B1 (en) * 2003-09-10 2004-09-28 National Semiconductor Corporation Direct implantation of fluorine into the channel region of a PMOS device
US7078300B2 (en) * 2003-09-27 2006-07-18 International Business Machines Corporation Thin germanium oxynitride gate dielectric for germanium-based devices
KR100743318B1 (ko) * 2004-04-12 2007-07-26 기성금속 주식회사 비정질을 비접촉 방법으로 전기장을 인가하고 열처리하여결정축이 편향 성장된 압전세라믹 및 상기 압전세라믹을제조하는 방법
KR100539158B1 (ko) * 2004-04-20 2005-12-26 주식회사 하이닉스반도체 플래쉬 메모리 소자의 게이트간 유전막 형성 방법
DE102004031453B4 (de) * 2004-06-29 2009-01-29 Qimonda Ag Verfahren zur Erzeugung eines Dielektrikums und Halbleiterstruktur
US20060105530A1 (en) * 2004-11-12 2006-05-18 Nanya Technology Corporation Method for fabricating semiconductor device
US7217667B2 (en) * 2005-02-15 2007-05-15 Freescale Semiconductor, Inc. Processes for forming electronic devices including a semiconductor layer
US7932539B2 (en) * 2005-11-29 2011-04-26 The Hong Kong University Of Science And Technology Enhancement-mode III-N devices, circuits, and methods
US8044432B2 (en) * 2005-11-29 2011-10-25 The Hong Kong University Of Science And Technology Low density drain HEMTs
US7972915B2 (en) * 2005-11-29 2011-07-05 The Hong Kong University Of Science And Technology Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs
JP2007200976A (ja) * 2006-01-24 2007-08-09 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2007335784A (ja) * 2006-06-19 2007-12-27 Renesas Technology Corp 半導体装置および半導体装置の製造方法
US8076228B2 (en) * 2007-01-29 2011-12-13 Infineon Technologies Ag Low noise transistor and method of making same
US8502323B2 (en) * 2007-08-03 2013-08-06 The Hong Kong University Of Science And Technology Reliable normally-off III-nitride active device structures, and related methods and systems
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
US20100084687A1 (en) * 2008-10-03 2010-04-08 The Hong Kong University Of Science And Technology Aluminum gallium nitride/gallium nitride high electron mobility transistors
JP6004459B1 (ja) * 2015-12-08 2016-10-05 国立大学法人 奈良先端科学技術大学院大学 薄膜トランジスタとその製造方法および前記薄膜トランジスタを有する半導体装置

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US4748131A (en) * 1987-02-06 1988-05-31 The Aerospace Corporation Method for increasing radiation hardness of MOS gate oxides
US5258333A (en) * 1992-08-18 1993-11-02 Intel Corporation Composite dielectric for a semiconductor device and method of fabrication
US5264396A (en) * 1993-01-14 1993-11-23 Micron Semiconductor, Inc. Method for enhancing nitridation and oxidation growth by introducing pulsed NF3
US5382533A (en) * 1993-06-18 1995-01-17 Micron Semiconductor, Inc. Method of manufacturing small geometry MOS field-effect transistors having improved barrier layer to hot electron injection

Also Published As

Publication number Publication date
KR960015815A (ko) 1996-05-22
EP0706204A2 (en) 1996-04-10
TW290726B (https=) 1996-11-11
EP0706204A3 (en) 1998-09-30
JPH08116059A (ja) 1996-05-07
US5571734A (en) 1996-11-05

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