KR100334147B1 - 레티클-마스킹시스템을갖는광학시스템용조명장치 - Google Patents

레티클-마스킹시스템을갖는광학시스템용조명장치 Download PDF

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Publication number
KR100334147B1
KR100334147B1 KR1019940029834A KR19940029834A KR100334147B1 KR 100334147 B1 KR100334147 B1 KR 100334147B1 KR 1019940029834 A KR1019940029834 A KR 1019940029834A KR 19940029834 A KR19940029834 A KR 19940029834A KR 100334147 B1 KR100334147 B1 KR 100334147B1
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KR
South Korea
Prior art keywords
lighting
reticle
beams
light source
axicons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019940029834A
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English (en)
Korean (ko)
Other versions
KR950019951A (ko
Inventor
요하네스방글러
Original Assignee
칼-짜이스-스티프퉁 트레이딩 에즈 칼 짜이스
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Publication of KR950019951A publication Critical patent/KR950019951A/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Dot-Matrix Printers And Others (AREA)
  • Microscoopes, Condenser (AREA)
KR1019940029834A 1993-12-13 1994-11-14 레티클-마스킹시스템을갖는광학시스템용조명장치 Expired - Lifetime KR100334147B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DEP4342424.4 1993-12-13
DE4342424A DE4342424A1 (de) 1993-12-13 1993-12-13 Beleuchtungseinrichtung für eine Projektions-Mikrolithographie- Belichtungsanlage
DEG9409744.5 1994-06-17
DE9409744U DE9409744U1 (de) 1993-12-13 1994-06-17 Beleuchtungseinrichtung für ein optisches System mit einem Reticle-Markierungssystem

Publications (2)

Publication Number Publication Date
KR950019951A KR950019951A (ko) 1995-07-24
KR100334147B1 true KR100334147B1 (ko) 2002-11-23

Family

ID=6504852

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019940029834A Expired - Lifetime KR100334147B1 (ko) 1993-12-13 1994-11-14 레티클-마스킹시스템을갖는광학시스템용조명장치
KR1019940029833A Expired - Fee Related KR100333566B1 (ko) 1993-12-13 1994-11-14 프로젝션-마이크로리소그래피-노광설비용조명장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019940029833A Expired - Fee Related KR100333566B1 (ko) 1993-12-13 1994-11-14 프로젝션-마이크로리소그래피-노광설비용조명장치

Country Status (3)

Country Link
KR (2) KR100334147B1 (enrdf_load_stackoverflow)
DE (4) DE4342424A1 (enrdf_load_stackoverflow)
TW (2) TW300282B (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6285443B1 (en) 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
DE19520563A1 (de) * 1995-06-06 1996-12-12 Zeiss Carl Fa Beleuchtungseinrichtung für ein Projektions-Mikrolithographie-Gerät
DE19548805A1 (de) 1995-12-27 1997-07-03 Zeiss Carl Fa REMA-Objektiv für Mikrolithographie-Projektionsbelichtungsanlagen
US7130129B2 (en) 1996-12-21 2006-10-31 Carl Zeiss Smt Ag Reticle-masking objective with aspherical lenses
DE10132988B4 (de) * 2001-07-06 2005-07-28 Carl Zeiss Smt Ag Projektionsbelichtungsanlage
DE10251087A1 (de) * 2002-10-29 2004-05-19 Carl Zeiss Smt Ag Beleuchtungseinrichtung für eine Mikrolithographie-Projektionsbelichtungsanlage

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3750174T2 (de) * 1986-10-30 1994-11-17 Canon K.K., Tokio/Tokyo Belichtungseinrichtung.
NL8801348A (nl) * 1988-05-26 1989-12-18 Philips Nv Belichtingsstelsel.
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices

Also Published As

Publication number Publication date
TW311182B (enrdf_load_stackoverflow) 1997-07-21
DE59406271D1 (de) 1998-07-23
KR100333566B1 (ko) 2002-11-30
KR950019950A (ko) 1995-07-24
DE59407337D1 (de) 1999-01-07
KR950019951A (ko) 1995-07-24
DE4342424A1 (de) 1995-06-14
TW300282B (enrdf_load_stackoverflow) 1997-03-11
DE9409744U1 (de) 1994-09-15

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