KR100334147B1 - Lighting units for optical systems with reticle-masking system - Google Patents
Lighting units for optical systems with reticle-masking system Download PDFInfo
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- KR100334147B1 KR100334147B1 KR1019940029834A KR19940029834A KR100334147B1 KR 100334147 B1 KR100334147 B1 KR 100334147B1 KR 1019940029834 A KR1019940029834 A KR 1019940029834A KR 19940029834 A KR19940029834 A KR 19940029834A KR 100334147 B1 KR100334147 B1 KR 100334147B1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
Abstract
본 발명은, 광학시스템 특히 마이크로리소그래피 프로젝션-노광설비용의 조명장치에 관한 것으로서, 광통합을 위한 유리봉(5)을 구비하고, 레티클마스킹시스템(REMA)(51)을 상기 유리봉(5)의 출구단에 설치하였다.The present invention relates to an illumination system for an optical system, in particular a microlithographic projection-exposure installation, comprising a glass rod (5) for light integration, wherein a reticle masking system (REMA) 51 is provided on the glass rod (5). It was installed at the outlet end of the.
Description
본 발명은 광학시스템용 조명장치, 륵히 레티클-마스킹시스템을 갖는 마이크로리소그래피 프로젝션-노광설비용의 조명장치에 관한 것이다.The present invention relates to an illumination device for an optical system, an illumination device for a microlithography projection-exposure system, having a reticle-masking system.
하나의 프로젝션-노광설비를 사용하여 다양한 마이크로칩들을 제조할 수 있으며, 이 경우 레티클에 대한 마스크들의 포맷이 달라질 수 있다. 그래서, 레티클에 대한 조명위치의 정확한 가변적 한계를 예정해야 하며, 그렇지 않을 경우 조명오류가 발생할 수 있다. 레티클에 가능한한 인접한 장치들은 그 조작을 금하고, 조리개 작용의 엣지 샤프니스(edge sharpness)에 대해 고분해능의 구조물로 되게 하는 요건을 충족시키지 못한다. 그래서, 조명비임경로내에 부가의 중간필드평면을 마련하고 그 중간필드평면내에 레티클마스킹시스템이 정확히 위치설정되도록 하는 것이 공지되어 있다. 따라서 소요되는 부가의 렌즈들은, 이미지필드, 개구, 동질성 및 색수차제거와 관련한 주어진 조건 때문에 상당한 노력 및 추가격인 장비를 위한 공간을 필요로 한다.One projection-exposure can be used to manufacture a variety of microchips, in which case the format of the masks for the reticle can vary. Thus, an accurate variable limit of the lighting position relative to the reticle must be planned, or lighting errors may occur. Devices as close as possible to the reticle prohibit its operation and do not meet the requirement to be a high resolution structure for the edge sharpness of the aperture. Thus, it is known to provide an additional intermediate field plane in the illumination beam path and to ensure that the reticle masking system is correctly positioned in the intermediate field plane. The additional lenses required therefore require considerable effort and space for additional equipment due to the given conditions associated with imagefield, aperture, homogeneity and chromatic aberration rejection.
EP 0 297 161 A1는, 조명비임경로내에 광도체-유리봉을 구비하는 프로젝션-노광설비에 대해, 유리봉 다음에 통과필터가 설치될 수 있도록 하는 것을 개시하고 있다. 이것은 명백히 동질성을 발전시키기 위한 것이지 차광을 위한 것은 아니다.EP 0 297 161 A1 discloses that for a projection-exposure installation having a light conductor-glass rod in an illumination beam path, a pass filter can be installed after the glass rod. This is clearly for developing homogeneity, not for shading.
따라서, 본 발명의 목적은 더 많은 장점을 가지는 동시에 그 추가비용이 적은 레티클마스킹시스템을 제공하는 것이다.It is therefore an object of the present invention to provide a reticle masking system having more advantages and at a lower cost.
상기 목적은, 특허청구의 범위 제 1항의 특징을 갖는 전제부에 따른 조명장치에 있어서, 집광을 위한 유리봉을 마련하고, 레티클마스킹시스템을 상기 유리봉의 출구단에 설치함으로써 달성된다. 전제부에 따른 조명장치의 경우 광분배의 균일화를 위한 벌집형콘덴서는 일반적이다. 혹은 유리봉이 그 기능을 떠맡을 수 있다. 그의 출구단에 레티클마스킹에 이용되는 중간필드평면이 존재한다는 사실이 이용되게 된다. 중간필드평면의 발생을 위한 부가적 조치도 역시 필요하지 아니하다.The above object is achieved by providing a glass rod for condensing and providing a reticle masking system at an outlet end of the glass rod in the lighting apparatus according to the preamble having the features of claim 1. In the case of a lighting device according to the premise, a honeycomb condenser for the uniformity of light distribution is common. Or a glass rod can take over the function. At the exit end, the fact that there is an intermediate field plane used for reticle masking is used. No additional measures for the generation of intermediate field planes are also necessary.
바람직한 실시예들은 종속항들에 개시되어 있다. 제 2, 3 및 13 내지 19항의 내용에 대해서는 동일자, 동일 출원인 및 발명자에 의한 특허출원 DE 44 21 053.1호 "조명장치"에도 설명되어 있다.Preferred embodiments are disclosed in the dependent claims. The contents of paragraphs 2, 3 and 13 to 19 are also described in patent application DE 44 21 053.1 "lighting device" by the same person, the same applicant and the inventor.
제 4 내지 12항의 내용은 우선권주장의 기초가 된 1993년 12월 13일자 특허출원 DE 43 42 424에도 설명되어 있다. 이들 두 출원의 개시내용은 본 출원의 일부이기도 하다.The contents of paragraphs 4 to 12 are also described in the patent application DE 43 42 424 of 13 December 1993 on which the priority claims are based. The disclosures of these two applications are also part of the present application.
제 1도는 전기한 동일자 특허출원에도 첨부되고 설명되어 있다.1 is also attached and described in the same patent application described above.
제 1도는 예를 들어 집적회로의 제조를 위한 본 발명에 따른 1㎛이하의 분해능을 갖는 프로젝션-리토그래피용의 조명장치의 일 실시예를 나타낸 것이다.1 shows an embodiment of a lighting apparatus for projection-lithography having a resolution of 1 μm or less according to the invention, for example for the manufacture of integrated circuits.
365nm 파장의 i-라인용 수은 단(短)-아크램프인 램프(1)는 타원형거울(12)의 촛점에 배치되어 있고, 이 타원형거울(12)은 방출된 광선을 제 2촛점(121)에 모은다.A lamp 1, which is a 365 nm wavelength mercury short-arclamp for i-line, is placed at the focal point of the elliptical mirror 12, and the elliptical mirror 12 carries out the emitted rays of the second focus 121. Collect on.
통상과 달리 셔터(13)는 촛점(121)의 외부에 설치되어 있고, 타원형거울(12)의 정점에 대한 거리는 촛점(121)의 정점에 대한 거리보다 약 5 내지 20% 바람직하게는 10% 더 크다. 이에 의하여, 그곳에 형성되는 2차광원이 더욱 동질성을 갖게 되고 광학적 상형성에 대한 조명의 부분적 가간섭효과가 개선된다. 그리하여 이를 위한 특별한 혼합장치를 절감할 수 있게 된다. 이 조치는 통상의 조명장치의 경우에도 마찬가지로 적용될 수 있다.Unlike usual, the shutter 13 is installed outside the focus 121, and the distance to the vertex of the oval mirror 12 is about 5 to 20% preferably 10% more than the distance to the vertex of the focus 121. Big. Thereby, the secondary light source formed there is more homogeneous and the partial coherence effect of the illumination on the optical imaging is improved. Thus, a special mixing device for this can be saved. This measure is equally applicable to conventional lighting equipment.
광원으로서는 UV레이저를 사용하여도 좋다.You may use a UV laser as a light source.
이어지는 대물렌즈(2)는, 제 1렌즈그룹(21), 오목한 제 1악시콘(22), 볼록한 제 2악시콘(23) 및 제 2렌즈그룹(24)으로 구성되어 있다. 조절수단(231) 및 (241)은 악시콘(23) 및 제 2렌즈그룹(24)의 요소의 축방향이동을 가능하게 한다. 이에 의해 악시콘(22, 23)의 상호간격이 조절되어 환상개구특성이 변동될 수 있을 뿐만아니라, 조명된 동공직경 및 가간섭도(σ)의 변동을 위한 줌효과도 얻어질 수 있다.The following objective lens 2 is composed of a first lens group 21, a concave first axon 22, a convex second axon 23 and a second lens group 24. The adjusting means 231 and 241 enable the axial movement of the elements of the axicon 23 and the second lens group 24. As a result, the mutual spacing of the axicones 22 and 23 can be adjusted to not only change the annular opening characteristic, but also a zoom effect for the variation of the illuminated pupil diameter and coherence coherence σ can be obtained.
동공중간평면(3) 다음에는 제 2대물렌즈(4)가 이어지고, 이 대물렌즈(4)에 의해 광선은 약 0.5m길이의 유리봉(5)내로 포집되게 된다. 유리봉(5)의 출구는 중간필드평면이며, 이 중간필드평면내에 마스킹시스템(51)이 배치되어있고, 이 마스킹시스템(51)은 종래의 REMA(레티클마스킹)시스템 대신에 설치된 것이다. 그리하여 값비싼 렌즈그룹을 갖는 REMA시스템을 위한 종래의 부가적인 중간필드평면을 마련하지 않아도 된다.The pupil intermediate plane 3 is followed by a second objective lens 4, which causes light rays to be collected into a glass rod 5 of about 0.5 m in length. The exit of the glass rod 5 is an intermediate field plane, in which a masking system 51 is arranged, which is provided in place of a conventional REMA (reticle masking) system. Thus, there is no need to provide additional conventional intermediate field planes for REMA systems with expensive lens groups.
그외 레티클마스킹시스템(51)의 형성은 종래의 정밀기계공학적 구성에 해당한다. 그러나 한계선이 평면내에서 정확히 진행한다는 점에 유의하여야 한다. 광학적 축선에 대칭적으로 경사진 예리한 조리개를 갖도록 구성하는 것이 바람직하다. 이것은 그들 표면들로부터의 반사광들이 조명장치의 비임경로로부터 효과적으로 벗어날 수 있기 때문이다.The formation of the other reticle masking system 51 corresponds to a conventional precision mechanical engineering configuration. However, it should be noted that the limit line runs exactly in the plane. It is desirable to have a sharp aperture slanted symmetrically to the optical axis. This is because reflected light from those surfaces can effectively escape the beam path of the lighting device.
이어지는 대물렌즈(6)는, 레티클(7)(마스크, 리토그래피형판)상에 마스킹시스템(51)을 갖춘 중간필드평면을 영사하고, 제 1렌즈그룹(61), 필터 혹은 조리개가 들어있을 수 있는 동공중간평면(62), 제 2 및 제 3렌즈그릅(63 및 65)과 그들 사이의 전환반사경(64)을 구비하며, 이 전환반사경(64)에 의해 대형의 조명장치(약 3m길이)를 수평으로 구성하고 레티클(7)을 수직으로 지지할 수 있다.The following objective lens 6 projects an intermediate field plane with a masking system 51 on a reticle 7 (mask, lithographic template) and may contain a first lens group 61, a filter or an aperture. Pupil-intermediate plane 62, second and third lens groups 63 and 65 and diversion reflecting mirror 64 therebetween, and the diversion reflecting mirror 64 allows for a large illumination device (approximately 3 m long). Can be configured horizontally and the reticle 7 can be vertically supported.
제 2a도 및 제 2b 도에는 광원(1')으로서 수은 단-아크램프가 도시되에 있고, 그로부터의 광속(光束)을 네개의 콜렉터(21'-24')가 각각 큰 공간각도 범위에서 포집하므로, 광선의 대부분이 네개의 광도체(31'-34')로 공급되게 된다. 광도체(31'-34')는 단면변환기로서 구성되어 있고 그 출구면은 환형상세그먼트으로 되어 있다. 출구면에 걸친 광강도를 더욱 동질화하기 위하여 광도체(31'-34')는 예를 들어 통계적으로 혼합된 개별섬유들로 조합되어 있다. 또한 그 입구단면을 광분배에 적합하도록 할 수 있다.2A and 2B show a mercury short-arclamp as the light source 1 ', which collects the luminous flux from the four collectors 21'-24' in a large spatial angle range, respectively. Therefore, most of the light rays are supplied to the four light conductors 31'-34 '. The photoconductors 31'-34 'are configured as cross-sectional transducers, and the exit faces thereof are annular segments. To further homogenize the light intensity across the exit face, the light conductors 31'-34 'are combined, for example, with statistically mixed individual fibers. In addition, the inlet end surface can be made suitable for light distribution.
그러지 아니하고, 광도체(31'-34')의 조명은 광선확장 광학기구와 기하학적 광선분리기인 피라미드반사경을 갖는 레이저에 의하여서도 실현될 수 있다. 이 경우 레이저는 예를 들어 UV를 방출하는 엑시머레이저이다.Otherwise, illumination of the light conductors 31'-34 'can also be realized by means of a laser having a light expanding optics and a pyramid reflector which is a geometric light splitter. In this case the laser is for example an excimer laser that emits UV.
4개의 광도체(31'-34')의 출구면 각각에는 릴레이광학기구(41'-44')로 구성된 장치, 제 1전환반사경(511'-514') 및 제 2전환반사경(521'-524')으로 이루어진 유니트가 각각 접속되어 있다. 이들 유니트는 가요성있게 만들어진 광도체(31'-34')의 연결단부를 포함하여 조절기구(541'-544')에 의해 방사상 및 방위각상으로 각각 조절 혹은 스캐닝가능하다. 제어부(100')는 조절기구(541'-544')를 제어한다.Each of the four optical conductors 31'-34 'has an exit surface composed of a relay optical device 41'-44', a first switching reflector 511'-514 'and a second switching reflector 521'-. Units 524 'are connected respectively. These units can be adjusted or scanned respectively radially and azimuthally by the adjusting mechanism 541'-544 ', including the connecting ends of the flexible conductors 31'-34'. The controller 100 'controls the adjusting mechanism 541'-544'.
포집경(6')을 거쳐 네개의 전환반사경(521'-524')으로부터 유리봉(7')의 입구면(71')에 도달한 광선은 상형성을 하게 된다. 이 입구면(71')은 조명장치의 동공평면(P)내에 존재하고, 네개의 각 유니트는 조절기구(541'-544')의 조절에 따라입구면들의 사분면의 각 부분을 조명할 수 있다. 콜렉터(21'-24')에 의해 포집된 네개의 비임은 여기서도 기하학적으로 조합되어 유효한 2차광원을 형성한다.Light rays reaching the entrance face 71 'of the glass rod 7' from the four diversion reflecting mirrors 521'-524 'via the collecting mirror 6' form an image. This entrance surface 71 'is present in the pupil plane P of the lighting device, and each of the four units can illuminate each part of the quadrants of the entrance surfaces according to the adjustment of the adjusting mechanism 541'-544'. . The four beams captured by the collectors 21'- 24 'are also geometrically combined here to form an effective secondary light source.
유리봉(7')의 출구면(72')에는 필드평면(F)이 존재하고, 이 필드평면내에는 본 발명에 따라 레티클마스킹시스템(8') 및 조절가능한 조리개가 배치되어 있다. 조절수단(81')에 의해 레티클마스킹시스템(REMA)이 필요에 따라 조절되게 된다.On the exit surface 72 'of the glass rod 7' there is a field plane F, in which the reticle masking system 8 'and an adjustable aperture are arranged in accordance with the invention. The reticle masking system REMA is adjusted as necessary by the adjusting means 81 '.
이 위치의 레티클마스킹시스템(8')은 공지된 방법에 비해 레티클마스킹시스템만을 위한 부가적 필드평면을 마련하는 데 소요되는 비용을 절감한다.The reticle masking system 8 'at this position saves the cost of preparing additional field planes exclusively for the reticle masking system, compared to known methods.
이어지는 중간상형성시스템(9')은 동공평면 P(93')과, 그 이전의 인터마스킹시스템(91')(Inter-Masking-Sygtem) 및 그 이후의 평면경으로 이루어지고 기호로 도시된 비임전환부(92')를 갖는 대물렌즈이며, 평면경은 공지된 바와 같이 전체적으로 더욱 컴팩트한 조립을 가능하게 한다. 그 다음에는 조명될 레티클(10)이 필드평면(F)내에 존재한다.Subsequent mesomorphism system 9 'consists of a pupil plane P 93' and a previous inter-masking system 91 'and subsequent plane mirrors and symbolically shown beam switching sections. It is an objective lens having a 92 ', and the planar mirror enables a more compact assembly as a whole. Then, the reticle 10 to be illuminated is in the field plane F.
특허출원 DE-P 43 42 424에 제 2a도 및 제 2b도가 포함되어 설명되어 있다.Patent application DE-P 43 42 424 is described, including FIGS. 2a and 2b.
그 이후에 이어지는 프로젝션대물렌즈 및 조명될 웨이퍼는 공지되어 있므로 도시되어 있지 아니하다.Subsequent projection objectives and wafers to be illuminated are not shown since they are known.
제 1도는 줌악시콘(Zoom-Axicon)을 갖는 일 실시예의 개략도,1 is a schematic diagram of one embodiment having a Zoom-Axicon,
제 2a도는 조명형태의 선택을 위한 조절가능한 반사경기구를 갖는 실시예의 개략적 측면도,2a is a schematic side view of an embodiment having an adjustable reflector for the selection of illumination type,
제 2b도는 제 2a도의 평면도이다.FIG. 2B is a plan view of FIG. 2A.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1: 수은 단(短)-아크 램프 2: 대물렌즈1: mercury stage-arc lamp 2: objective lens
3: 동공중간평면 5: 유리봉3: pupil middle plane 5: glass rod
13: 셔터 22, 23: 악시콘13: shutter 22, 23: axicon
31, 32, 33, 34: 광도체 51: 레티클마스킹시스템31, 32, 33, 34: optical conductor 51: reticle masking system
100: 제어부100: control unit
Claims (20)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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DE4342424A DE4342424A1 (en) | 1993-12-13 | 1993-12-13 | Illuminator for projection micro-lithography illumination installation |
DEP4342424.4 | 1993-12-13 | ||
DEG9409744.5 | 1994-06-17 | ||
DE9409744U DE9409744U1 (en) | 1993-12-13 | 1994-06-17 | Illumination device for an optical system with a reticle marking system |
Publications (2)
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KR950019951A KR950019951A (en) | 1995-07-24 |
KR100334147B1 true KR100334147B1 (en) | 2002-11-23 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019940029833A KR100333566B1 (en) | 1993-12-13 | 1994-11-14 | Projection-microlithography-lighting equipment |
KR1019940029834A KR100334147B1 (en) | 1993-12-13 | 1994-11-14 | Lighting units for optical systems with reticle-masking system |
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Application Number | Title | Priority Date | Filing Date |
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KR1019940029833A KR100333566B1 (en) | 1993-12-13 | 1994-11-14 | Projection-microlithography-lighting equipment |
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KR (2) | KR100333566B1 (en) |
DE (4) | DE4342424A1 (en) |
TW (2) | TW300282B (en) |
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Publication number | Priority date | Publication date | Assignee | Title |
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DE19520563A1 (en) * | 1995-06-06 | 1996-12-12 | Zeiss Carl Fa | Illumination device for a projection microlithography device |
US6285443B1 (en) | 1993-12-13 | 2001-09-04 | Carl-Zeiss-Stiftung | Illuminating arrangement for a projection microlithographic apparatus |
DE19548805A1 (en) | 1995-12-27 | 1997-07-03 | Zeiss Carl Fa | REMA lens for microlithography projection exposure systems |
US7130129B2 (en) | 1996-12-21 | 2006-10-31 | Carl Zeiss Smt Ag | Reticle-masking objective with aspherical lenses |
DE10132988B4 (en) * | 2001-07-06 | 2005-07-28 | Carl Zeiss Smt Ag | Projection exposure system |
DE10251087A1 (en) * | 2002-10-29 | 2004-05-19 | Carl Zeiss Smt Ag | Illumination device for a microlithography projection exposure system |
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EP0266203B1 (en) * | 1986-10-30 | 1994-07-06 | Canon Kabushiki Kaisha | An illumination device |
NL8801348A (en) * | 1988-05-26 | 1989-12-18 | Philips Nv | EXPOSURE SYSTEM. |
US5305054A (en) * | 1991-02-22 | 1994-04-19 | Canon Kabushiki Kaisha | Imaging method for manufacture of microdevices |
-
1993
- 1993-12-13 DE DE4342424A patent/DE4342424A1/en not_active Ceased
-
1994
- 1994-06-17 DE DE9409744U patent/DE9409744U1/en not_active Expired - Lifetime
- 1994-10-22 DE DE59406271T patent/DE59406271D1/en not_active Expired - Fee Related
- 1994-10-22 DE DE59407337T patent/DE59407337D1/en not_active Expired - Fee Related
- 1994-11-14 KR KR1019940029833A patent/KR100333566B1/en not_active IP Right Cessation
- 1994-11-14 KR KR1019940029834A patent/KR100334147B1/en not_active IP Right Cessation
- 1994-11-25 TW TW083110967A patent/TW300282B/zh not_active IP Right Cessation
- 1994-11-25 TW TW083110968A patent/TW311182B/zh active
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DE9409744U1 (en) | 1994-09-15 |
KR950019950A (en) | 1995-07-24 |
KR100333566B1 (en) | 2002-11-30 |
DE59406271D1 (en) | 1998-07-23 |
DE59407337D1 (en) | 1999-01-07 |
TW300282B (en) | 1997-03-11 |
DE4342424A1 (en) | 1995-06-14 |
TW311182B (en) | 1997-07-21 |
KR950019951A (en) | 1995-07-24 |
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