KR950019951A - Lighting equipment for optical systems with reticle-masking system - Google Patents

Lighting equipment for optical systems with reticle-masking system Download PDF

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KR950019951A
KR950019951A KR1019940029834A KR19940029834A KR950019951A KR 950019951 A KR950019951 A KR 950019951A KR 1019940029834 A KR1019940029834 A KR 1019940029834A KR 19940029834 A KR19940029834 A KR 19940029834A KR 950019951 A KR950019951 A KR 950019951A
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South Korea
Prior art keywords
exposure
beams
light source
lighting
axicons
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KR1019940029834A
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Korean (ko)
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KR100334147B1 (en
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방글러 요하네스
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뮐러-리스만, 카. 그나찌히
칼-짜이스-슈티프퉁 트레이딩 에즈 칼 짜이스
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)

Abstract

본 발명은, 광학시스템 특히 마이크로리소그래피 프로젝션-노광설비용의 조명장치에 관한 것으로서, 광통합을 위한 유리봉(5)을 구비하고, 레티클마스킹시스템(REMA)(51)을 상기 유리봉(5)의 출구단에 설치하였다.The present invention relates to an illumination system for an optical system, in particular a microlithographic projection-exposure installation, comprising a glass rod (5) for light integration, wherein a reticle masking system (REMA) 51 is provided on the glass rod (5). It was installed at the outlet end of the.

Description

레티클-마스킹시스템을 갖는 광학시스템용 조명장치Lighting equipment for optical systems with reticle-masking system

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 줌악시콘(zoon-zxicon)을 갖는 일 실시예의 개략도.1 is a schematic diagram of one embodiment having a zoon-zxicon.

Claims (20)

레티클-마스킹시스템(51)을 갖는 공학시스템 특히 마이크로리소그래피 프로젝션-노광설비용의 조명장치에 있어서, 광통합을 위한 유리봉(5)을 마련하고, 상기 레티클마스킹시스템(51)을 상기 유리봉(5)의 출구단에 설치한 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.In an illumination system for an engineering system having a reticle-masking system 51, in particular for a microlithography projection-exposure facility, a glass rod 5 for light integration is provided, and the reticle masking system 51 is attached to the glass rod ( 5) Illumination apparatus for microlithography projection-exposure equipment, characterized in that installed at the outlet end of 5). 제1항에 있어서, 광원(1)과 유리봉(5)사이에 악시콘(24)을 구비한 대물렌즈(2)가 배치되어 있는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.An illuminating device for a microlithographic projection-exposure system as set forth in claim 1, wherein an objective lens (2) having an axicon (24) is arranged between the light source (1) and the glass rod (5). 제2항에 있어서, 두개의 악시콘(22,23)을 구비하여, 상기 두 악시콘(22,23)의 간격을 조절함으로써 통상의 조명 및 다양한 기하학적 형태의 환상개구조명 혹은 다극조명이 무단으로 설정가능한 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.The method according to claim 2, comprising two axicones (22, 23), by adjusting the distance between the two axicons (22, 23), the annular structure name or the multi-pole lighting of the conventional illumination and various geometric forms without permission A luminaire for microlithographic projection-exposure installations, characterized by being configurable. 제1항에 있어서, 광원(1′)과 유리봉(5′)사이에 간섭계수(σ)의 조절이 간으한 통상의 조명, 환상개구조명 및 둘 혹은 네개의 방향으로 이루어진 대칭적 경사조명을 포함한 다양한 조명방식을 선택적으로 처리하는 장치가 마련되어 있고, 상기 장치는, 상기 광원(1′)으로부터 방출된 비임들을 둘 혹은 네개의 입체각영역으로부터 분리포집하는 수단(21′-24′)과, 상기 포집된 비임들의 형성 혹은 차광을 위한 수단(31′-34′)과, 상형성될 레티클(10′)용의 레티클평면으로 변환되는 동공평면(93′)의 섹터들에 대한 비임들의 상형성을 위한 반사경기구(511′-514′,521-524′,531′,533′;6′)와, 상기 비임들의 이미지가 상기 동공평면(93′)내에서 반경방향 및 방사방향에서 이동될 수 있도록 하는 조절수단(541′-544′)을 포함하는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.2. The light source according to claim 1, wherein the conventional illumination, annular structure name and symmetrical oblique light consisting of two or four directions are produced by the adjustment of the interference coefficient σ between the light source 1 'and the glass rod 5'. A device is provided for selectively processing a variety of illumination schemes, including means for separating and collecting the beams emitted from the light source 1 'from two or four solid angle regions 21'-24', Means for forming or shielding the trapped beams 31'-34 'and the imaging of the beams for the sectors of the pupil plane 93' converted to a reticle plane for the reticle 10 'to be imaged. Reflectors (511'-514 ', 521-524', 531 ', 533'; 6 ') and images of the beams can be moved radially and radially within the pupil plane (93'). Microlithography comprising a control means (541'-544 ') Photography projection-lighting equipment. 제4항에 있어서, 상기 포집수단(21′-24′) 혹은 상기 포집된 광원의 형성 또는 차광수단(31′-34′)은 광도체(31′-34′)를 포함하는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.The method of claim 4, wherein the collecting means (21'-24 ') or the collection or shading means (31'-34') of the collected light source comprises a light conductor (31'-34 '). Lighting equipment for microlithography projection exposure equipment. 제5항에 있어서, 상기 조절수단(541′-544′)은 상기 광도체(31′-34′)의 출구들의 위치를 조절하는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.6. Apparatus according to claim 5, wherein said adjusting means (541'-544 ') adjusts the positions of the outlets of said light conductors (31'-34'). 제4항에 있어서, 상기 조절수단(541′-544′)은 상기 반사경기구(511′-533′)의 부재들을 조절하는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.5. An apparatus according to claim 4, wherein said adjusting means (541'-544 ') adjusts the members of said reflector (511'-533'). 제4항 내지 제7항중 어느 한 항에 있어서, 상기 동공평면(93′)내의 상기 비임들의 이미지는, 대칭적 경사조명이나 통상의 조명에 접합하도록 치수결정되어 있는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.8. Microlithographic projection according to any one of claims 4 to 7, wherein the image of the beams in the pupil plane 93 'is dimensioned to bond to symmetrical oblique or conventional illumination. Lighting equipment for exposure equipment. 제4항 내지 제7항중 어느 한 항에 있어서, 상기 비임들의 이미지크기의 변경수단이 상기 동공평면내에 마련되어 있는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.8. An illuminating apparatus according to any one of claims 4 to 7, wherein means for changing the image size of the beams is provided in the pupil plane. 제4항 내지 제7항중 어느 한 항에 있어서, 상기 비임들의 이미지형상의 변경수단이 마련되어 있는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.8. A lighting apparatus for a microlithography projection-exposure system according to any one of claims 4 to 7, wherein means for changing the image shape of the beams are provided. 제4항 내지 제7항중 어느 한 항에 있어서, 상기 비임들은 환상세스먼트형상으로 나타나는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.8. A lighting device for a microlithography projection-exposure system according to any one of claims 4 to 7, wherein the beams appear in an annular segment shape. 제1항 내지 제7항중 어느 한 항에 있어서, 상기 광원은 레이저인 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.8. Apparatus according to any one of the preceding claims, wherein said light source is a laser. 제1항, 제2항, 또는 제3항에 있어서, 두개의 악시콘(22,23)을 구비하며, 상기 두악시콘(22,23)은 비임경로내에서 상호 직접 연속하여 있고 둘간의 간격이 조절이 가능하며, 한악시콘(22)은 오목형이고 제2악시콘(23)은 볼록형이며, 상기 두 악시콘(22,23)의 첨부는 동일방향인 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.4. A method according to claim 1, 2 or 3, comprising two axicones 22 and 23, the two axicons 22 and 23 being directly contiguous with each other in the beam path and spacing therebetween. It is possible to adjust this, the micro axon 22 is concave, the second axicon 23 is convex, and the attachment of the two axicons 22 and 23 is in the same direction. Lighting equipment for exposure equipment. 제13항에 있어서, 상기 악시콘(22,23)은 제조기술적으로 만들 수 있고, 기능적으로 유용한 동일한 첨각(α)을 갖는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.14. A lighting apparatus for a microlithography projection-exposure system as set forth in claim 13 wherein said axicons (22, 23) are made manufacturable and have functionally useful identical tips (α). 제13항에 있어서, 상기 악시콘(22,23)들의 간격은 접촉할 때까지 감소될 수 있는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.15. A lighting device as claimed in claim 13, wherein the spacing of the axicons (22, 23) can be reduced until contact. 제13항에 있어서, 상기 악시콘(22,23)들은 원추형인 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.15. A lighting device according to claim 13, wherein the axicons (22, 23) are conical. 제13항에 있어서, 상기 악시콘(22,23)들은 피라미드형인 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.15. A lighting device according to claim 13, wherein the axicons (22, 23) are pyramid shaped. 제1항 내지 제7항중 어느 한 항에 있어서, 줌기능을 갖는 대물렌즈(2)를 포함하는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.8. A lighting device according to any one of the preceding claims, comprising an objective lens (2) having a zoom function. 제1항 내지 제7항중 어느 한 항에 있어서, 램프반사경의 촛점내에 있는 광원(1)을 구비하며, 제2광원을 형성하는 블라인드(13)가 상기 램프반사경(12)의 촛점(121)의 외부에 배치되어 있는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.8. A blind (13) according to any one of the preceding claims, having a light source (1) in focus of the lamp reflector, wherein a blind (13) forming a second light source is provided with a focus (121) of the lamp reflector (12). Illumination apparatus for microlithography projection-exposure equipment, which is arranged externally. 제1항 내지 제7항중 어느 한 항에 있어서, 상기 레티클마스킹시스템(51)은 경사지게 설치된 블라인드판을 구비하는 것을 특징으로 하는 마이크로리소그래피 프로젝션-노광설비용 조명장치.8. An illuminating device according to any one of the preceding claims, wherein said reticle masking system (51) comprises a blind plate mounted obliquely. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940029834A 1993-12-13 1994-11-14 Lighting units for optical systems with reticle-masking system KR100334147B1 (en)

Applications Claiming Priority (4)

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DEP4342424.4 1993-12-13
DE4342424A DE4342424A1 (en) 1993-12-13 1993-12-13 Illuminator for projection micro-lithography illumination installation
DEG9409744.5 1994-06-17
DE9409744U DE9409744U1 (en) 1993-12-13 1994-06-17 Illumination device for an optical system with a reticle marking system

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DE19548805A1 (en) 1995-12-27 1997-07-03 Zeiss Carl Fa REMA lens for microlithography projection exposure systems
US7130129B2 (en) 1996-12-21 2006-10-31 Carl Zeiss Smt Ag Reticle-masking objective with aspherical lenses
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