KR950019950A - Projection-microlithography-lighting equipment - Google Patents

Projection-microlithography-lighting equipment Download PDF

Info

Publication number
KR950019950A
KR950019950A KR1019940029833A KR19940029833A KR950019950A KR 950019950 A KR950019950 A KR 950019950A KR 1019940029833 A KR1019940029833 A KR 1019940029833A KR 19940029833 A KR19940029833 A KR 19940029833A KR 950019950 A KR950019950 A KR 950019950A
Authority
KR
South Korea
Prior art keywords
beams
projection
microlithography
lighting
exposure
Prior art date
Application number
KR1019940029833A
Other languages
Korean (ko)
Other versions
KR100333566B1 (en
Inventor
방글러 요하네스
이트너 게르하르트
Original Assignee
뮐러-리스만, 카. 그나찌히
칼-짜이스-슈티프퉁 트레이딩 에즈 칼 짜이스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 뮐러-리스만, 카. 그나찌히, 칼-짜이스-슈티프퉁 트레이딩 에즈 칼 짜이스 filed Critical 뮐러-리스만, 카. 그나찌히
Publication of KR950019950A publication Critical patent/KR950019950A/en
Application granted granted Critical
Publication of KR100333566B1 publication Critical patent/KR100333566B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
  • Dot-Matrix Printers And Others (AREA)

Abstract

본 발명은, 가간섭계수(σ)의 조절이 가능한 통상의 조명, 환상개구조명 및 둘 혹은 네개의 방향으로 이루어진 대칭적 경사조명을 포함한 다양한 조명방식을 임의의 선택하여 처리할 수 있는 프로젝션-마이크로리소그래피-노광설비용 조명장치에 관한 것으로서, 광원(1)으로부터 방출된 비임들을 둘 혹은 네개의 입체각영역으로부터 분리포집하는 수단(21-24)과, 상기 포집된 비임들의 형성 혹은 차광을 위한 수단(31-34)과, 상형성될 레티클(10)용의 레티클평면으로 퓨리에변환된 동공평면(93)의 섹터들에 대한 비임들의 상형성을 위한 반사경기구(511-514,521-524,531,533;6)와, 상기 비임들의 이미지가 상기 동공평면(93)내에서 반경방향 및 반사방향에서 임의로 이동할 수 있도록 상기 각 개별 비임을 조절하는 조절수단(541-544)을 포함한다.The present invention provides a projection-microcomputer capable of arbitrarily selecting and processing various illumination methods including conventional illumination with adjustable coherence coefficient σ, annular aperture structure name, and symmetrical oblique illumination in two or four directions. A lighting apparatus for a lithography-exposure installation, comprising: means (21-24) for separating and collecting the beams emitted from the light source (1) from two or four solid angle regions, and means for forming or shielding the collected beams ( 31-34) and reflector mechanisms (511-514, 521-524, 531, 533) for image formation of the beams for the sectors of the pupil plane 93 that are Fourier transformed to the reticle plane for the reticle 10 to be imaged; And adjusting means 541-544 for adjusting each individual beam such that the image of the beams can move arbitrarily in the radial and reflective directions within the pupil plane 93.

Description

프로젝션-마이크로리소그래피-노광설비용 조명장치Projection-microlithography-lighting equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1a도는 본 발명에 따른 조명장치의 일 실시예의 개략적 측면도.1a is a schematic side view of an embodiment of a lighting device according to the invention.

Claims (12)

가간섭계수(σ)의 조절이 가능한 통상의 조명, 환상개구조명 및 둘 혹은 네개의 방향으로 이루어진 대칭적 경사조명을 포함한 다양한 조명방식을 임의로 선택하여 처리할 수 있는 프로젝션-마이크로리소그래피-노광설비용 조명장치에 관한 것으로서, 광원(1)과, 상기 광원(1)으로부터 방출된 비임들을 둘 혹은 네개의 입체각영경으로부터 분리포집하는 수단(21-24)과, 상기 포집된 비임들의 형성 혹은 차광을 위한 수단(31-34)과, 상형성될 때 레티클(10)용의 레티클평면으로 퓨리에변환된 동공평면(93)의 섹터들에 대한 비임들의 상형성을 위한 반사경기구(511-514,521-524,531,533:6)와, 상기 비임들의 이미지가 상기 동공평면(93)내에서 반경방향 및 반사방향에서 임의로 이동할 수 있도록 상기 각 개별 비임을 조절하는 조절수단(541-544)을 포함하는 것을 특징으로 하는 프로젝션-마이크로리소그래피-노광설비용 조명장치.For projection-microlithography-exposure equipment that can arbitrarily select and process various lighting methods including conventional lighting with adjustable coherence coefficient (σ), annular structure name, and symmetrical oblique lighting in two or four directions A lighting device, comprising: a light source (1), means (21-24) for separating and collecting the beams emitted from the light source (1) from two or four stereoscopic angles, and for the formation or shading of the collected beams And reflectors (511-514,521-524,531,533: 6) for imaging the means (31-34) and the beams for the sectors of the pupil plane (93) that are Fourier transformed into the reticle plane for the reticle (10) when imaged. And adjusting means 541-544 for adjusting each individual beam so that the image of the beams can move arbitrarily in the radial and reflective directions within the pupil plane 93. Projection-microlithography-exposure equipment lighting equipment. 제1항에 있어서, 상기 포집수단(21-24)혹은 상기 포집된 광원의 형성 또는 차광수단(31-34)은 광도체(31-34)를 포함하는 것을 특징으로 하는 프로젝션-마이크로리소그래피-노광설비용 조명장치.The projection-microlithography-exposure according to claim 1, wherein the collecting means (21-24) or the collecting or shaping means (31-34) comprises a light conductor (31-34). Fixture for fixtures. 제2항에 있어서, 상기 조절수단(541-544)은 상기 광도체(31-34)의 출구들의 위치를 조절하는 것을 특징으로 하는 프로젝션-마이크로리소그래픽-노광설비용 조명장치.3. A lighting apparatus according to claim 2, wherein said adjusting means (541-544) adjusts the positions of the outlets of said light conductors (31-34). 제1항에 있어서, 상기 조절수단(541-544)은 상기 반사경기구(511-533)의 부재들을 조절하는 것을 특징으로 하는 프로젝션-마이크로리소그래픽-노광설비용 조명장치.2. A lighting device for a projection-microlithography-exposure apparatus as set forth in claim 1, wherein said adjusting means (541-544) adjusts the members of said reflector (511-533). 제1항 내지 제4항중 어느 한 항에 있어서, 상기 반사경기구(511-533,6)와 상기 레티클평면(10)사이에 유리봉(7)이 배치되어 있는 것을 특징으로 하는 프로젝션-마이크로리소그래픽-노광설비용 조명장치.Projection-microlithography according to any one of claims 1 to 4, characterized in that a glass rod (7) is arranged between the reflecting instruments (511-533, 6) and the reticle plane (10). Lighting equipment for exposure equipment. 제5항에 있어서, 상기 유리봉(7)의 출구단(72)근처에 가변 마스킹장치(8)가 설치되어 있는 것을 특징으로 하는 프로젝션-마이크로리소그래픽-노광설비용 조명장치.6. A lighting apparatus for a projection-microlithography-exposure system as set forth in claim 5, characterized in that a variable masking device (8) is provided near the outlet end (72) of the glass rod (7). 제1항 내지 제4항중 어느 한 항에 있어서, 상기 동공평면(93)내의 상기 비임들의 이미지는, 스캔닝이동없이 대칭적 경사조명이나 σ=0.1 이상의 기간섭계수를 갖는 통상의 조명에 접합하도록 치수결정되어 있는 것을 특징으로 하는 프로젝션-마이크로리소그래피-노광설비용 조명장치.5. The image as claimed in claim 1, wherein the image of the beams in the pupil plane 93 is bonded to a conventional illumination having a symmetric oblique illumination or a period coefficient greater than sigma = 0.1 or higher without scanning movement. Illumination apparatus for projection-microlithography-exposure installations, being dimensioned. 제1항 내지 제4항중 어느 한 항에 있어서, 상기 비임들의 이미지크기의 변경수단이 상기 동공평면내에 마련되어 있는 것을 특징으로 하는 프로젝션-마이크로리소그래피-노광설비용 조명장치.The illuminating device for a projection-microlithography-exposing apparatus according to any one of claims 1 to 4, wherein means for changing the image size of the beams is provided in the pupil plane. 제1항 내지 제4항중 어느 한 항에 있어서, 상기 비임들의 이미지형상의 변경수단이 마련되어 있는 것을 특징으로 하는 프로젝션-마이크로리소그래피-노광설비용 조명장치.The illuminating device for a projection-microlithography-exposing apparatus according to any one of claims 1 to 4, wherein means for changing the image shape of the beams is provided. 제1항 내지 제4항중 어느 한 항에 있어서, 상기 비임들은 환상세그먼트형상으로 나타나는 것을 특징으로 하는 프로젝션-마이크로리소그래피-노광설비용 조명장치.The illumination device according to any one of claims 1 to 4, wherein the beams are formed in an annular segment shape. 제1항 내지 제4항중 어느 한 항에 있어서, 상기 광원은 레이저이며, 상기 비임의 분리포집수단은 광분리기를 포함하는 것을 특징으로 하는 프로젝션-마이크로리소그래피-노광설비용 조명장치.5. A lighting apparatus according to any one of claims 1 to 4, wherein said light source is a laser and said beam separating means comprises an optical separator. 제1항 내지 제4항중 어느 한 항에 있어서, 상기 조절수단(541-544)은 소정의 조명형태의 제공을 위해 각 노광과정중에 스캔닝이동을 실행하여 상기 비임들의 이미지가 상기 동공평면(93)내에서 연속적으로 생성되게 하는 것을 특징으로 하는 프로젝션-마이크로리소그래피-노광설비용 조명장치.The method according to any one of claims 1 to 4, wherein the adjusting means (541-544) performs a scanning movement during each exposure process to provide a predetermined illumination type so that the image of the beams is displayed in the pupil plane (93). Illumination for projection-microlithography-exposure installations, characterized in that the continuous production within). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940029833A 1993-12-13 1994-11-14 Projection-microlithography-lighting equipment KR100333566B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DEP4342424.4 1993-12-13
DE4342424A DE4342424A1 (en) 1993-12-13 1993-12-13 Illuminator for projection micro-lithography illumination installation
DE9409744U DE9409744U1 (en) 1993-12-13 1994-06-17 Illumination device for an optical system with a reticle marking system
DEG9409744.5 1994-06-17

Publications (2)

Publication Number Publication Date
KR950019950A true KR950019950A (en) 1995-07-24
KR100333566B1 KR100333566B1 (en) 2002-11-30

Family

ID=6504852

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019940029833A KR100333566B1 (en) 1993-12-13 1994-11-14 Projection-microlithography-lighting equipment
KR1019940029834A KR100334147B1 (en) 1993-12-13 1994-11-14 Lighting units for optical systems with reticle-masking system

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019940029834A KR100334147B1 (en) 1993-12-13 1994-11-14 Lighting units for optical systems with reticle-masking system

Country Status (3)

Country Link
KR (2) KR100333566B1 (en)
DE (4) DE4342424A1 (en)
TW (2) TW300282B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6285443B1 (en) 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
DE19520563A1 (en) * 1995-06-06 1996-12-12 Zeiss Carl Fa Illumination device for a projection microlithography device
DE19548805A1 (en) 1995-12-27 1997-07-03 Zeiss Carl Fa REMA lens for microlithography projection exposure systems
US7130129B2 (en) 1996-12-21 2006-10-31 Carl Zeiss Smt Ag Reticle-masking objective with aspherical lenses
DE10132988B4 (en) * 2001-07-06 2005-07-28 Carl Zeiss Smt Ag Projection exposure system
DE10251087A1 (en) * 2002-10-29 2004-05-19 Carl Zeiss Smt Ag Illumination device for a microlithography projection exposure system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3750174T2 (en) * 1986-10-30 1994-11-17 Canon K.K., Tokio/Tokyo Exposure device.
NL8801348A (en) * 1988-05-26 1989-12-18 Philips Nv EXPOSURE SYSTEM.
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices

Also Published As

Publication number Publication date
TW311182B (en) 1997-07-21
KR950019951A (en) 1995-07-24
DE59407337D1 (en) 1999-01-07
KR100333566B1 (en) 2002-11-30
KR100334147B1 (en) 2002-11-23
DE59406271D1 (en) 1998-07-23
DE4342424A1 (en) 1995-06-14
TW300282B (en) 1997-03-11
DE9409744U1 (en) 1994-09-15

Similar Documents

Publication Publication Date Title
KR0150455B1 (en) Light fixture for externally illuminated sign
JP3224387B2 (en) Light extraction film
US4109304A (en) Device for coherent lighting of objects
KR860009268A (en) Illumination with all simultaneous adjustment parameters of stage lighting
ES2087095T3 (en) OPERATING LAMP.
KR950704642A (en) Lighting system used in spotlights, projectors and magnifiers
KR910012703A (en) Device for three-dimensional inspection of hollow bodies
KR900008299A (en) Illumination method and apparatus and projection exposure method and apparatus
US6062710A (en) Light fixture with at least one lens or reflector as image magnifier and a diffuser for reducing glare
KR880008052A (en) Transmissive overhead projector
US4355350A (en) Reflector for use in an artificial lighting device
KR950019950A (en) Projection-microlithography-lighting equipment
GB2142444A (en) Apparatus for viewing printed circuit boards having specular non-planar topography
US5485319A (en) Medical device for lighting a treatment field
EP0087525A1 (en) Improved illumination system
ATE112030T1 (en) IMPROVEMENTS TO FITTINGS FOR LIGHTING TUBES.
JP2005129530A (en) Optical assembly, and illumination device corresponding to the same
KR100326539B1 (en) Lighting apparatus
US3707626A (en) Optical reflector
SU1352437A1 (en) Lighting device
KR950001868A (en) Exposure device using lighting device and copper device
RU186552U1 (en) PROJECTOR TYPE LIGHTING INSTRUMENT
GB2065858A (en) A reflector unit having variable angle light out-put
JPS6310402A (en) Lighting apparatus
CN108445614B (en) Transmitted light illumination device for microscope

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070330

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee