KR100330582B1 - 알루미늄 금속막용 에칭 용액 - Google Patents
알루미늄 금속막용 에칭 용액 Download PDFInfo
- Publication number
- KR100330582B1 KR100330582B1 KR1019990041119A KR19990041119A KR100330582B1 KR 100330582 B1 KR100330582 B1 KR 100330582B1 KR 1019990041119 A KR1019990041119 A KR 1019990041119A KR 19990041119 A KR19990041119 A KR 19990041119A KR 100330582 B1 KR100330582 B1 KR 100330582B1
- Authority
- KR
- South Korea
- Prior art keywords
- etching
- layer
- weight
- etching solution
- nitric acid
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 35
- 239000002184 metal Substances 0.000 title claims abstract description 35
- 229910052782 aluminium Inorganic materials 0.000 title description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title description 2
- 239000004411 aluminium Substances 0.000 title 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 57
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 44
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 24
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 239000000654 additive Substances 0.000 claims abstract description 11
- 230000000996 additive effect Effects 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910000583 Nd alloy Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 39
- 239000000243 solution Substances 0.000 description 38
- 239000010408 film Substances 0.000 description 20
- 238000001039 wet etching Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004148 unit process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- -1 and generally Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
실시예번호 | 조성 (중량%)*H3PO4/HNO3/CH3CO2H/첨가제 | 결과 | 비고 |
1 | 57/7/15/0.01 | ◎ | |
2 | 60/10/12/0.02 | ◎ | |
3 | 58/10/13/0.02 | ◎ | |
4 | 60/7/11/0/02 | ◎ | |
5 | 55/7/11/0/02 | ◎ | |
6 | 69/6/10/0.02 | ○ | |
7 | 50/6/15/0.01 | ○ | |
8 | 55/10/10/0.01 | ○ | |
9 | 40/9/15/0.01 | ○ | |
1 (비교) | 72/2/10/0 | x | 기존 용액 |
2 (비교) | 68/5/10/0 | x | 기존 용액 |
3 (비교) | 60/3/7/0 | x | 기존 용액 |
* 100 중량%가 되게 물로 희석함 |
Claims (3)
- 40 ~ 70 중량%의 인산 (H3PO4), 5 ~ 20 중량%의 질산 (HNO3), 10 ~ 20중량%의 아세트산 및 100 중량%가 되게 하는 양의 물을 포함하고, 조성물 전체 중량을 기준으로 0.01 ~ 0.05 중량%의 첨가제를 포함할 수 있음을 특징으로 하는, 반도체 장치에서 하부 Al-Nd 합금층 및 상부 Mo 금속층의 이중층 구조로 된 금속막용 에칭 용액.
- 삭제
- 제 1 항에 있어서, 50 ~ 60 중량%의 인산, 5~10 중량%의 질산, 11 ~ 15 중량%의 아세트산을 포함함을 특징으로 하는 에칭 용액.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990041119A KR100330582B1 (ko) | 1999-09-22 | 1999-09-22 | 알루미늄 금속막용 에칭 용액 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990041119A KR100330582B1 (ko) | 1999-09-22 | 1999-09-22 | 알루미늄 금속막용 에칭 용액 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010028729A KR20010028729A (ko) | 2001-04-06 |
KR100330582B1 true KR100330582B1 (ko) | 2002-03-29 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990041119A KR100330582B1 (ko) | 1999-09-22 | 1999-09-22 | 알루미늄 금속막용 에칭 용액 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100330582B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100420100B1 (ko) * | 2001-07-12 | 2004-03-04 | 삼성전자주식회사 | 알루미늄 에천트 조성물 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100444345B1 (ko) * | 2002-03-28 | 2004-08-16 | 테크노세미켐 주식회사 | 평판디스플레이의 박막트랜지스터 형성을 위한 금속전극용식각액 조성물 |
TWI245071B (en) * | 2002-04-24 | 2005-12-11 | Mitsubishi Chem Corp | Etchant and method of etching |
KR20160109568A (ko) | 2015-03-12 | 2016-09-21 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법 |
KR102092914B1 (ko) | 2019-06-03 | 2020-03-24 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1192966A (ja) * | 1997-09-22 | 1999-04-06 | Matsushita Electric Ind Co Ltd | エッチング液濃度制御装置 |
-
1999
- 1999-09-22 KR KR1019990041119A patent/KR100330582B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1192966A (ja) * | 1997-09-22 | 1999-04-06 | Matsushita Electric Ind Co Ltd | エッチング液濃度制御装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100420100B1 (ko) * | 2001-07-12 | 2004-03-04 | 삼성전자주식회사 | 알루미늄 에천트 조성물 |
Also Published As
Publication number | Publication date |
---|---|
KR20010028729A (ko) | 2001-04-06 |
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