KR100328905B1 - 내화성금속실리사이드층형성방법 - Google Patents

내화성금속실리사이드층형성방법 Download PDF

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Publication number
KR100328905B1
KR100328905B1 KR1019920024607A KR920024607A KR100328905B1 KR 100328905 B1 KR100328905 B1 KR 100328905B1 KR 1019920024607 A KR1019920024607 A KR 1019920024607A KR 920024607 A KR920024607 A KR 920024607A KR 100328905 B1 KR100328905 B1 KR 100328905B1
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KR
South Korea
Prior art keywords
layer
silicide
refractory metal
nitrogen
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019920024607A
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English (en)
Korean (ko)
Inventor
로버트에이취.헤브맨
Original Assignee
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 텍사스 인스트루먼츠 인코포레이티드 filed Critical 텍사스 인스트루먼츠 인코포레이티드
Application granted granted Critical
Publication of KR100328905B1 publication Critical patent/KR100328905B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019920024607A 1991-12-19 1992-12-17 내화성금속실리사이드층형성방법 Expired - Fee Related KR100328905B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US812,241 1991-12-19
US07/812,241 US5395798A (en) 1991-12-19 1991-12-19 Refractory metal silicide deposition process

Publications (1)

Publication Number Publication Date
KR100328905B1 true KR100328905B1 (ko) 2002-08-17

Family

ID=25208975

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920024607A Expired - Fee Related KR100328905B1 (ko) 1991-12-19 1992-12-17 내화성금속실리사이드층형성방법

Country Status (5)

Country Link
US (1) US5395798A (enExample)
EP (1) EP0547600A1 (enExample)
JP (1) JPH065545A (enExample)
KR (1) KR100328905B1 (enExample)
TW (1) TW280000B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739046A (en) * 1994-09-30 1998-04-14 United Microelectronics Corporation Method of making a reliable barrier layer
US6200910B1 (en) * 1996-06-25 2001-03-13 Texas Instruments Incorporated Selective titanium nitride strip
US5949114A (en) 1996-11-07 1999-09-07 Micron Technology, Inc. Semiconductor device having increased breakdown voltage and method of fabricating same
US6022801A (en) * 1998-02-18 2000-02-08 International Business Machines Corporation Method for forming an atomically flat interface for a highly disordered metal-silicon barrier film
US6281102B1 (en) 2000-01-13 2001-08-28 Integrated Device Technology, Inc. Cobalt silicide structure for improving gate oxide integrity and method for fabricating same
US6535413B1 (en) * 2000-08-31 2003-03-18 Micron Technology, Inc. Method of selectively forming local interconnects using design rules
US6365496B1 (en) * 2000-11-16 2002-04-02 Stmicroelectronics, Inc. Elimination of junction spiking using soft sputter etch and two step tin film during the contact barrier deposition process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03136326A (ja) * 1989-10-23 1991-06-11 Mitsubishi Electric Corp 半導体装置の製造方法およびその製造装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4690730A (en) * 1986-03-07 1987-09-01 Texas Instruments Incorporated Oxide-capped titanium silicide formation
JPS63280417A (ja) * 1987-05-12 1988-11-17 Fujitsu Ltd 半導体装置の製造方法
US4784973A (en) * 1987-08-24 1988-11-15 Inmos Corporation Semiconductor contact silicide/nitride process with control for silicide thickness
US5043300A (en) * 1990-04-16 1991-08-27 Applied Materials, Inc. Single anneal step process for forming titanium silicide on semiconductor wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03136326A (ja) * 1989-10-23 1991-06-11 Mitsubishi Electric Corp 半導体装置の製造方法およびその製造装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Applied Physics Letter, vol. 57, pp 1660-1663(1991.10.15) *
Japanese Journal of Applied Physics, vol. 30, pp 2673-2678(1991.11) *

Also Published As

Publication number Publication date
TW280000B (enExample) 1996-07-01
JPH065545A (ja) 1994-01-14
US5395798A (en) 1995-03-07
EP0547600A1 (en) 1993-06-23

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