KR100309857B1 - TiSi2/TiN피복상호연결기술 - Google Patents

TiSi2/TiN피복상호연결기술 Download PDF

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Publication number
KR100309857B1
KR100309857B1 KR1019940000404A KR19940000404A KR100309857B1 KR 100309857 B1 KR100309857 B1 KR 100309857B1 KR 1019940000404 A KR1019940000404 A KR 1019940000404A KR 19940000404 A KR19940000404 A KR 19940000404A KR 100309857 B1 KR100309857 B1 KR 100309857B1
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KR
South Korea
Prior art keywords
region
tin
local interconnect
tisi
silicon
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Expired - Lifetime
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KR1019940000404A
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English (en)
Korean (ko)
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KR940018699A (ko
Inventor
신푸젱
Original Assignee
텍사스 인스트루먼츠 인코포레이티드
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Publication of KR940018699A publication Critical patent/KR940018699A/ko
Application granted granted Critical
Publication of KR100309857B1 publication Critical patent/KR100309857B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019940000404A 1993-01-12 1994-01-12 TiSi2/TiN피복상호연결기술 Expired - Lifetime KR100309857B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US320993A 1993-01-12 1993-01-12
US08/003,209 1993-01-12

Publications (2)

Publication Number Publication Date
KR940018699A KR940018699A (ko) 1994-08-18
KR100309857B1 true KR100309857B1 (ko) 2003-07-16

Family

ID=21704729

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940000404A Expired - Lifetime KR100309857B1 (ko) 1993-01-12 1994-01-12 TiSi2/TiN피복상호연결기술

Country Status (6)

Country Link
US (1) US5936306A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0638930B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH077095A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100309857B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69430461T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW270226B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160072934A (ko) 2014-12-15 2016-06-24 피앤씨테크 주식회사 환기 팬 및 가스 차단기 제어 시스템 및 방법
KR20230158772A (ko) 2022-05-12 2023-11-21 (주)엘엑스하우시스 조리 상황 인지 장치 및 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990067331A (ko) * 1995-11-06 1999-08-16 야스카와 히데아키 국소 배선부를 포함하는 반도체 장치 및 그 제조 방법
US6391760B1 (en) * 1998-12-08 2002-05-21 United Microelectronics Corp. Method of fabricating local interconnect
US6737716B1 (en) * 1999-01-29 2004-05-18 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US6495413B2 (en) 2001-02-28 2002-12-17 Ramtron International Corporation Structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuits
US6423592B1 (en) 2001-06-26 2002-07-23 Ramtron International Corporation PZT layer as a temporary encapsulation and hard mask for a ferroelectric capacitor
US6534807B2 (en) 2001-08-13 2003-03-18 International Business Machines Corporation Local interconnect junction on insulator (JOI) structure
US7479437B2 (en) * 2006-04-28 2009-01-20 International Business Machines Corporation Method to reduce contact resistance on thin silicon-on-insulator device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3777364A (en) * 1972-07-31 1973-12-11 Fairchild Camera Instr Co Methods for forming metal/metal silicide semiconductor device interconnect system
US4975756A (en) * 1985-05-01 1990-12-04 Texas Instruments Incorporated SRAM with local interconnect
US4814854A (en) * 1985-05-01 1989-03-21 Texas Instruments Incorporated Integrated circuit device and process with tin-gate transistor
US4804636A (en) * 1985-05-01 1989-02-14 Texas Instruments Incorporated Process for making integrated circuits having titanium nitride triple interconnect
US4746219A (en) * 1986-03-07 1988-05-24 Texas Instruments Incorporated Local interconnect
JPS6358943A (ja) * 1986-08-29 1988-03-14 Mitsubishi Electric Corp 電極・配線膜の構造
US4782380A (en) * 1987-01-22 1988-11-01 Advanced Micro Devices, Inc. Multilayer interconnection for integrated circuit structure having two or more conductive metal layers
US4962414A (en) * 1988-02-11 1990-10-09 Sgs-Thomson Microelectronics, Inc. Method for forming a contact VIA
US5168076A (en) * 1990-01-12 1992-12-01 Paradigm Technology, Inc. Method of fabricating a high resistance polysilicon load resistor
FR2658951B1 (fr) * 1990-02-23 1992-05-07 Bonis Maurice Procede de fabrication d'un circuit integre pour filiere analogique rapide utilisant des lignes d'interconnexions locales en siliciure.
US5091763A (en) * 1990-12-19 1992-02-25 Intel Corporation Self-aligned overlap MOSFET and method of fabrication
EP0517368B1 (en) * 1991-05-03 1998-09-16 STMicroelectronics, Inc. Local interconnect for integrated circuits
US5173450A (en) * 1991-12-30 1992-12-22 Texas Instruments Incorporated Titanium silicide local interconnect process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160072934A (ko) 2014-12-15 2016-06-24 피앤씨테크 주식회사 환기 팬 및 가스 차단기 제어 시스템 및 방법
KR20230158772A (ko) 2022-05-12 2023-11-21 (주)엘엑스하우시스 조리 상황 인지 장치 및 방법

Also Published As

Publication number Publication date
US5936306A (en) 1999-08-10
DE69430461D1 (de) 2002-05-29
KR940018699A (ko) 1994-08-18
TW270226B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-02-11
EP0638930A1 (en) 1995-02-15
JPH077095A (ja) 1995-01-10
EP0638930B1 (en) 2002-04-24
DE69430461T2 (de) 2002-11-14

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