KR100296565B1 - 비등방성5산화탄탈륨에칭방법 - Google Patents

비등방성5산화탄탈륨에칭방법 Download PDF

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Publication number
KR100296565B1
KR100296565B1 KR1019930006546A KR930006546A KR100296565B1 KR 100296565 B1 KR100296565 B1 KR 100296565B1 KR 1019930006546 A KR1019930006546 A KR 1019930006546A KR 930006546 A KR930006546 A KR 930006546A KR 100296565 B1 KR100296565 B1 KR 100296565B1
Authority
KR
South Korea
Prior art keywords
radiation
etching
irradiated
substrate
tantalum pentoxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930006546A
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English (en)
Korean (ko)
Other versions
KR930021821A (ko
Inventor
몬트에이.더글라스
하워드알.베라탄
스코트알.서머펠트
Original Assignee
윌리엄 비. 켐플러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 비. 켐플러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 비. 켐플러
Publication of KR930021821A publication Critical patent/KR930021821A/ko
Application granted granted Critical
Publication of KR100296565B1 publication Critical patent/KR100296565B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H10P50/283—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
KR1019930006546A 1992-04-20 1993-04-19 비등방성5산화탄탈륨에칭방법 Expired - Lifetime KR100296565B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87270292A 1992-04-20 1992-04-20
US07/872,702 1992-04-20

Publications (2)

Publication Number Publication Date
KR930021821A KR930021821A (ko) 1993-11-23
KR100296565B1 true KR100296565B1 (ko) 2001-10-24

Family

ID=25360138

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930006546A Expired - Lifetime KR100296565B1 (ko) 1992-04-20 1993-04-19 비등방성5산화탄탈륨에칭방법

Country Status (4)

Country Link
US (1) US5312516A (cg-RX-API-DMAC10.html)
JP (1) JPH0649664A (cg-RX-API-DMAC10.html)
KR (1) KR100296565B1 (cg-RX-API-DMAC10.html)
TW (1) TW256936B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210042147A (ko) * 2018-09-04 2021-04-16 도쿄엘렉트론가부시키가이샤 습식 에칭을 위한 광자적으로 조정된 부식제 반응도

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0465815A (ja) * 1990-07-06 1992-03-02 Matsushita Electric Ind Co Ltd パターン作成方法
US6127279A (en) * 1994-09-26 2000-10-03 Semiconductor Energy Laboratory Co., Ltd. Solution applying method
US5603848A (en) * 1995-01-03 1997-02-18 Texas Instruments Incorporated Method for etching through a substrate to an attached coating
US5705443A (en) * 1995-05-30 1998-01-06 Advanced Technology Materials, Inc. Etching method for refractory materials
US5919607A (en) * 1995-10-26 1999-07-06 Brown University Research Foundation Photo-encoded selective etching for glass based microtechnology applications
US5847390A (en) * 1996-04-09 1998-12-08 Texas Instruments Incorporated Reduced stress electrode for focal plane array of thermal imaging system and method
US6054328A (en) * 1996-12-06 2000-04-25 International Business Machines Corporation Method for cleaning the surface of a dielectric
US6083557A (en) * 1997-10-28 2000-07-04 Raytheon Company System and method for making a conductive polymer coating
US6080987A (en) * 1997-10-28 2000-06-27 Raytheon Company Infrared-sensitive conductive-polymer coating
US6352934B1 (en) * 1999-08-26 2002-03-05 Infineon Technologies Ag Sidewall oxide process for improved shallow junction formation in support region
KR20050033072A (ko) * 2002-08-06 2005-04-08 엑스에스아이엘 테크놀러지 리미티드 레이저 가공 방법 및 장치
JP4084712B2 (ja) * 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
CN104759753B (zh) * 2015-03-30 2016-08-31 江苏大学 多系统自动化协调工作提高激光诱导空化强化的方法
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661201A (en) * 1985-09-09 1987-04-28 Cts Corporation Preferential etching of a piezoelectric material

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4391683A (en) * 1982-09-10 1983-07-05 Bell Telephone Laboratories, Incorporated Mask structures for photoetching procedures
US4414066A (en) * 1982-09-10 1983-11-08 Bell Telephone Laboratories, Incorporated Electrochemical photoetching of compound semiconductors
US4415414A (en) * 1982-09-10 1983-11-15 Bell Telephone Laboratories, Incorporated Etching of optical surfaces
US4861421A (en) * 1988-06-01 1989-08-29 Texas Instruments Incorporated Photochemical semiconductor etching
US5157000A (en) * 1989-07-10 1992-10-20 Texas Instruments Incorporated Method for dry etching openings in integrated circuit layers
US5057184A (en) * 1990-04-06 1991-10-15 International Business Machines Corporation Laser etching of materials in liquids
US5165283A (en) * 1991-05-02 1992-11-24 Kulite Semiconductor Products, Inc. High temperature transducers and methods of fabricating the same employing silicon carbide

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661201A (en) * 1985-09-09 1987-04-28 Cts Corporation Preferential etching of a piezoelectric material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210042147A (ko) * 2018-09-04 2021-04-16 도쿄엘렉트론가부시키가이샤 습식 에칭을 위한 광자적으로 조정된 부식제 반응도
KR102602499B1 (ko) 2018-09-04 2023-11-14 도쿄엘렉트론가부시키가이샤 습식 에칭을 위한 광자적으로 조정된 부식제 반응도

Also Published As

Publication number Publication date
US5312516A (en) 1994-05-17
JPH0649664A (ja) 1994-02-22
KR930021821A (ko) 1993-11-23
TW256936B (cg-RX-API-DMAC10.html) 1995-09-11

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