KR100292030B1 - 반도체 박막 공정에서의 박막 두께 제어 방법 - Google Patents

반도체 박막 공정에서의 박막 두께 제어 방법 Download PDF

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Publication number
KR100292030B1
KR100292030B1 KR1019980038026A KR19980038026A KR100292030B1 KR 100292030 B1 KR100292030 B1 KR 100292030B1 KR 1019980038026 A KR1019980038026 A KR 1019980038026A KR 19980038026 A KR19980038026 A KR 19980038026A KR 100292030 B1 KR100292030 B1 KR 100292030B1
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KR
South Korea
Prior art keywords
thin film
film thickness
region
center
process temperature
Prior art date
Application number
KR1019980038026A
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English (en)
Korean (ko)
Other versions
KR20000019756A (ko
Inventor
전경식
장영철
조봉수
Original Assignee
윤종용
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윤종용, 삼성전자 주식회사 filed Critical 윤종용
Priority to KR1019980038026A priority Critical patent/KR100292030B1/ko
Priority to US09/379,565 priority patent/US6211094B1/en
Priority to JP26246199A priority patent/JP3898857B2/ja
Publication of KR20000019756A publication Critical patent/KR20000019756A/ko
Application granted granted Critical
Publication of KR100292030B1 publication Critical patent/KR100292030B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
KR1019980038026A 1998-09-15 1998-09-15 반도체 박막 공정에서의 박막 두께 제어 방법 KR100292030B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019980038026A KR100292030B1 (ko) 1998-09-15 1998-09-15 반도체 박막 공정에서의 박막 두께 제어 방법
US09/379,565 US6211094B1 (en) 1998-09-15 1999-08-23 Thickness control method in fabrication of thin-film layers in semiconductor devices
JP26246199A JP3898857B2 (ja) 1998-09-15 1999-09-16 半導体基板への薄膜形成工程における薄膜厚さ制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980038026A KR100292030B1 (ko) 1998-09-15 1998-09-15 반도체 박막 공정에서의 박막 두께 제어 방법

Publications (2)

Publication Number Publication Date
KR20000019756A KR20000019756A (ko) 2000-04-15
KR100292030B1 true KR100292030B1 (ko) 2001-08-07

Family

ID=19550645

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980038026A KR100292030B1 (ko) 1998-09-15 1998-09-15 반도체 박막 공정에서의 박막 두께 제어 방법

Country Status (3)

Country Link
US (1) US6211094B1 (US06211094-20010403-M00006.png)
JP (1) JP3898857B2 (US06211094-20010403-M00006.png)
KR (1) KR100292030B1 (US06211094-20010403-M00006.png)

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US7698012B2 (en) * 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7201936B2 (en) * 2001-06-19 2007-04-10 Applied Materials, Inc. Method of feedback control of sub-atmospheric chemical vapor deposition processes
US7160739B2 (en) * 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
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US6913938B2 (en) * 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US7082345B2 (en) * 2001-06-19 2006-07-25 Applied Materials, Inc. Method, system and medium for process control for the matching of tools, chambers and/or other semiconductor-related entities
US7337019B2 (en) * 2001-07-16 2008-02-26 Applied Materials, Inc. Integration of fault detection with run-to-run control
JP4731755B2 (ja) * 2001-07-26 2011-07-27 東京エレクトロン株式会社 移載装置の制御方法および熱処理方法並びに熱処理装置
JP3998445B2 (ja) * 2001-08-31 2007-10-24 株式会社東芝 半導体装置の製造方法、半導体装置の製造装置、半導体装置の製造システム、および半導体製造装置のクリーニング方法
US7225047B2 (en) * 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
US20030199112A1 (en) * 2002-03-22 2003-10-23 Applied Materials, Inc. Copper wiring module control
JP3853302B2 (ja) * 2002-08-09 2006-12-06 東京エレクトロン株式会社 熱処理方法及び熱処理装置
US20040063224A1 (en) * 2002-09-18 2004-04-01 Applied Materials, Inc. Feedback control of a chemical mechanical polishing process for multi-layered films
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US7333871B2 (en) * 2003-01-21 2008-02-19 Applied Materials, Inc. Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools
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US7205228B2 (en) * 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
US6864189B2 (en) * 2003-06-27 2005-03-08 International Business Machines Corporation Methodology for measuring and controlling film thickness profiles
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US7356377B2 (en) * 2004-01-29 2008-04-08 Applied Materials, Inc. System, method, and medium for monitoring performance of an advanced process control system
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KR100755116B1 (ko) * 2006-08-01 2007-09-04 동부일렉트로닉스 주식회사 Ｐｅｃｖｄ 실리콘 나이트라이드막 형성 방법
US7634325B2 (en) * 2007-05-03 2009-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Prediction of uniformity of a wafer
KR101054887B1 (ko) * 2009-03-09 2011-08-05 한양대학교 산학협력단 균일도 측정 방법 및 장치
CN103147067A (zh) * 2011-12-07 2013-06-12 无锡华润华晶微电子有限公司 低压化学气相淀积装置及其薄膜淀积方法
JP6280407B2 (ja) * 2014-03-19 2018-02-14 東京エレクトロン株式会社 基板処理方法、プログラム、制御装置、基板処理装置及び基板処理システム
JP6784127B2 (ja) * 2016-10-04 2020-11-11 株式会社村田製作所 半導体デバイスの製造方法
CN114262880B (zh) * 2021-12-16 2023-11-17 上海华虹宏力半导体制造有限公司 一种lpcvd炉管自动调控沉积膜厚的方法

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JPH07307301A (ja) * 1994-03-17 1995-11-21 Hitachi Ltd 半導体製造装置及び半導体製造方法

Also Published As

Publication number Publication date
US6211094B1 (en) 2001-04-03
KR20000019756A (ko) 2000-04-15
JP3898857B2 (ja) 2007-03-28
JP2000091251A (ja) 2000-03-31

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