KR100284468B1 - Dram의글로벌비트라인을이용한싱글-엔드센싱 - Google Patents

Dram의글로벌비트라인을이용한싱글-엔드센싱 Download PDF

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Publication number
KR100284468B1
KR100284468B1 KR1019970709065A KR19970709065A KR100284468B1 KR 100284468 B1 KR100284468 B1 KR 100284468B1 KR 1019970709065 A KR1019970709065 A KR 1019970709065A KR 19970709065 A KR19970709065 A KR 19970709065A KR 100284468 B1 KR100284468 B1 KR 100284468B1
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KR
South Korea
Prior art keywords
node
sense amplifier
digit line
memory cell
single digit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019970709065A
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English (en)
Korean (ko)
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KR19990022584A (ko
Inventor
머마지드 세이예디
스티번 엘. 캐스퍼
Original Assignee
로데릭 더블류 루이스
마이크론 테크놀로지, 인크
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Publication of KR19990022584A publication Critical patent/KR19990022584A/ko
Application granted granted Critical
Publication of KR100284468B1 publication Critical patent/KR100284468B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019970709065A 1995-06-06 1996-06-05 Dram의글로벌비트라인을이용한싱글-엔드센싱 Expired - Fee Related KR100284468B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/471,860 US5625588A (en) 1995-06-06 1995-06-06 Single-ended sensing using global bit lines for DRAM
US8/471,860 1995-06-06
PCT/US1996/009073 WO1996039699A1 (en) 1995-06-06 1996-06-05 Single-ended sensing using global bit lines for dram

Publications (2)

Publication Number Publication Date
KR19990022584A KR19990022584A (ko) 1999-03-25
KR100284468B1 true KR100284468B1 (ko) 2001-03-02

Family

ID=23873265

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970709065A Expired - Fee Related KR100284468B1 (ko) 1995-06-06 1996-06-05 Dram의글로벌비트라인을이용한싱글-엔드센싱

Country Status (9)

Country Link
US (2) US5625588A (https=)
EP (1) EP0830685B1 (https=)
JP (1) JP3357899B2 (https=)
KR (1) KR100284468B1 (https=)
AT (1) ATE223614T1 (https=)
AU (1) AU6049196A (https=)
DE (1) DE69623466T2 (https=)
TW (1) TW300996B (https=)
WO (1) WO1996039699A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3723599B2 (ja) * 1995-04-07 2005-12-07 株式会社ルネサステクノロジ 半導体記憶装置
US5872736A (en) * 1996-10-28 1999-02-16 Micron Technology, Inc. High speed input buffer
US5917758A (en) 1996-11-04 1999-06-29 Micron Technology, Inc. Adjustable output driver circuit
US5835433A (en) * 1997-06-09 1998-11-10 Micron Technology, Inc. Floating isolation gate from DRAM sensing
US5862072A (en) * 1997-08-22 1999-01-19 Micron Technology, Inc. Memory array architecture and method for dynamic cell plate sensing
US5949728A (en) * 1997-12-12 1999-09-07 Scenix Semiconductor, Inc. High speed, noise immune, single ended sensing scheme for non-volatile memories
US6304809B1 (en) 2000-03-21 2001-10-16 Ford Global Technologies, Inc. Engine control monitor for vehicle equipped with engine and transmission
US6292417B1 (en) 2000-07-26 2001-09-18 Micron Technology, Inc. Memory device with reduced bit line pre-charge voltage
US6301175B1 (en) * 2000-07-26 2001-10-09 Micron Technology, Inc. Memory device with single-ended sensing and low voltage pre-charge
US6822904B2 (en) 2001-01-03 2004-11-23 Micron Technology, Inc. Fast sensing scheme for floating-gate memory cells
ITRM20010001A1 (it) * 2001-01-03 2002-07-03 Micron Technology Inc Circuiteria di rilevazione per memorie flash a bassa tensione.
DE10110625A1 (de) * 2001-03-06 2002-09-19 Infineon Technologies Ag Verfahren und Schaltungsanordnung zum Bewerten eines Lesesignals eines Leseverstärkers für einen dynamischen Halbleiterspeicher
ITRM20010531A1 (it) * 2001-08-31 2003-02-28 Micron Technology Inc Dispositivo rilevatore a bassa potenza e alta tensione per memorie ditipo flash.
US7372092B2 (en) * 2005-05-05 2008-05-13 Micron Technology, Inc. Memory cell, device, and system
US7196954B2 (en) * 2005-06-06 2007-03-27 Infineon Technologies Ag Sensing current recycling method during self-refresh
US7286425B2 (en) * 2005-10-31 2007-10-23 International Business Machines Corporation System and method for capacitive mis-match bit-line sensing
US8929132B2 (en) * 2011-11-17 2015-01-06 Everspin Technologies, Inc. Write driver circuit and method for writing to a spin-torque MRAM
US9847117B1 (en) 2016-09-26 2017-12-19 Micron Technology, Inc. Dynamic reference voltage determination

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4625300A (en) * 1982-12-01 1986-11-25 Texas Instruments Incorporated Single-ended sense amplifier for dynamic memory array
US4715015A (en) * 1984-06-01 1987-12-22 Sharp Kabushiki Kaisha Dynamic semiconductor memory with improved sense signal
US4598389A (en) * 1984-10-01 1986-07-01 Texas Instruments Incorporated Single-ended CMOS sense amplifier
US4823031A (en) * 1988-02-01 1989-04-18 Texas Instruments Incorporated Single-ended sense amplifier with positive feedback
US5042011A (en) * 1989-05-22 1991-08-20 Micron Technology, Inc. Sense amplifier pulldown device with tailored edge input
JPH0336763A (ja) * 1989-07-03 1991-02-18 Hitachi Ltd 半導体集積回路装置
US5013943A (en) * 1989-08-11 1991-05-07 Simtek Corporation Single ended sense amplifier with improved data recall for variable bit line current
KR920000409B1 (ko) * 1989-11-30 1992-01-13 현대전자산업 주식회사 다이나믹램의 분리회로
US5241503A (en) * 1991-02-25 1993-08-31 Motorola, Inc. Dynamic random access memory with improved page-mode performance and method therefor having isolator between memory cells and sense amplifiers
JPH05182458A (ja) * 1991-12-26 1993-07-23 Toshiba Corp 半導体記憶装置
KR950009234B1 (ko) * 1992-02-19 1995-08-18 삼성전자주식회사 반도체 메모리장치의 비트라인 분리클럭 발생장치
US5220221A (en) * 1992-03-06 1993-06-15 Micron Technology, Inc. Sense amplifier pulldown circuit for minimizing ground noise at high power supply voltages
US5369317A (en) * 1992-06-26 1994-11-29 Micron Technology, Inc. Circuit and method for controlling the potential of a digit line and in limiting said potential to a maximum value
US5295100A (en) * 1992-08-14 1994-03-15 Micron Semiconductor, Inc. Method for providing a faster ones voltage level restore operation in a DRAM
US5367213A (en) * 1993-06-09 1994-11-22 Micron Semiconductor, Inc. P-channel sense amplifier pull-up circuit incorporating a voltage comparator for use in DRAM memories having non-bootstrapped word lines

Also Published As

Publication number Publication date
DE69623466D1 (de) 2002-10-10
JP3357899B2 (ja) 2002-12-16
ATE223614T1 (de) 2002-09-15
KR19990022584A (ko) 1999-03-25
DE69623466T2 (de) 2003-01-16
TW300996B (https=) 1997-03-21
US5625588A (en) 1997-04-29
JPH10507864A (ja) 1998-07-28
EP0830685B1 (en) 2002-09-04
EP0830685A1 (en) 1998-03-25
US5684749A (en) 1997-11-04
WO1996039699A1 (en) 1996-12-12
AU6049196A (en) 1996-12-24

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