KR100274081B1 - 레지스트패턴 형성방법 및 레지스트패턴 형성장치 - Google Patents

레지스트패턴 형성방법 및 레지스트패턴 형성장치 Download PDF

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Publication number
KR100274081B1
KR100274081B1 KR1019940030349A KR19940030349A KR100274081B1 KR 100274081 B1 KR100274081 B1 KR 100274081B1 KR 1019940030349 A KR1019940030349 A KR 1019940030349A KR 19940030349 A KR19940030349 A KR 19940030349A KR 100274081 B1 KR100274081 B1 KR 100274081B1
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KR
South Korea
Prior art keywords
unit
resist
cooling
substrate
temperature control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940030349A
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English (en)
Korean (ko)
Other versions
KR950015554A (ko
Inventor
이께다리끼오
Original Assignee
이데이 노부유끼
소니 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5290495A external-priority patent/JPH07142356A/ja
Priority claimed from JP5290494A external-priority patent/JP2829909B2/ja
Application filed by 이데이 노부유끼, 소니 가부시끼 가이샤 filed Critical 이데이 노부유끼
Publication of KR950015554A publication Critical patent/KR950015554A/ko
Application granted granted Critical
Publication of KR100274081B1 publication Critical patent/KR100274081B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0474—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019940030349A 1993-11-19 1994-11-18 레지스트패턴 형성방법 및 레지스트패턴 형성장치 Expired - Fee Related KR100274081B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP5290495A JPH07142356A (ja) 1993-11-19 1993-11-19 レジスト・パターン形成方法およびこれに用いるレジスト・パターン形成システム
JP93-290494 1993-11-19
JP93-290495 1993-11-19
JP5290494A JP2829909B2 (ja) 1993-11-19 1993-11-19 レジスト処理方法及びレジスト処理装置

Publications (2)

Publication Number Publication Date
KR950015554A KR950015554A (ko) 1995-06-17
KR100274081B1 true KR100274081B1 (ko) 2000-12-15

Family

ID=26558084

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940030349A Expired - Fee Related KR100274081B1 (ko) 1993-11-19 1994-11-18 레지스트패턴 형성방법 및 레지스트패턴 형성장치

Country Status (3)

Country Link
US (1) US6022672A (enExample)
KR (1) KR100274081B1 (enExample)
TW (1) TW301037B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180124732A (ko) * 2017-05-12 2018-11-21 캐논 가부시끼가이샤 임프린트 방법, 임프린트 장치, 임프린트 시스템 및 물품 제조 방법

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69905985T2 (de) * 1998-07-08 2003-09-11 Nitto Denko Corp., Ibaraki Verfahren zum Entschichten eines Resistmaterials
JP3416078B2 (ja) * 1999-06-09 2003-06-16 東京エレクトロン株式会社 基板処理装置
SG185822A1 (en) 2000-02-01 2012-12-28 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
JP3648129B2 (ja) * 2000-05-10 2005-05-18 東京エレクトロン株式会社 塗布現像処理方法及び塗布現像処理システム
US6420098B1 (en) * 2000-07-12 2002-07-16 Motorola, Inc. Method and system for manufacturing semiconductor devices on a wafer
JP4150493B2 (ja) * 2000-08-22 2008-09-17 株式会社東芝 パターン描画装置における温度測定方法
JP2002134395A (ja) * 2000-10-25 2002-05-10 Sony Corp 半導体装置の製造方法および半導体装置の製造システム
TWI245774B (en) * 2001-03-01 2005-12-21 Shinetsu Chemical Co Silicon-containing polymer, resist composition and patterning process
US6809928B2 (en) * 2002-12-27 2004-10-26 Intel Corporation Sealed and pressurized liquid cooling system for microprocessor
JP2004342654A (ja) * 2003-05-13 2004-12-02 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4202962B2 (ja) * 2004-04-27 2008-12-24 株式会社東芝 基板処理方法及び半導体装置の製造方法
JP4393976B2 (ja) 2004-12-06 2010-01-06 大日本スクリーン製造株式会社 基板処理装置
US8636458B2 (en) * 2007-06-06 2014-01-28 Asml Netherlands B.V. Integrated post-exposure bake track
JP5148944B2 (ja) * 2007-08-14 2013-02-20 大日本スクリーン製造株式会社 基板処理システム
US20090142694A1 (en) * 2007-11-30 2009-06-04 Braggone Oy Siloxane polymer compositions and methods of using the same
US10345718B2 (en) * 2017-05-17 2019-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Pattern forming method and apparatus for lithography

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR860002082B1 (ko) * 1983-01-19 1986-11-24 가부시기가이샤 도시바 레지스트 패턴의 형성 방법 및 장치
JPS60157225A (ja) * 1984-01-27 1985-08-17 Toshiba Corp レジストパタ−ン形成方法
JPS61156814A (ja) * 1984-12-28 1986-07-16 Toshiba Corp レジストベ−キング方法およびレジストベ−キング装置
JPS6218028A (ja) * 1985-07-16 1987-01-27 Toshiba Corp デイスカム装置
JPS62129846A (ja) * 1985-12-02 1987-06-12 Dainippon Screen Mfg Co Ltd フオトレジストの塗布方法及び塗布装置
JPS6459915A (en) * 1987-08-31 1989-03-07 Sigma Gijutsu Kogyo Heat treatment device for resist coated substrate
KR970003907B1 (ko) * 1988-02-12 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 기판처리 장치 및 기판처리 방법
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180124732A (ko) * 2017-05-12 2018-11-21 캐논 가부시끼가이샤 임프린트 방법, 임프린트 장치, 임프린트 시스템 및 물품 제조 방법
KR102312561B1 (ko) 2017-05-12 2021-10-14 캐논 가부시끼가이샤 임프린트 방법, 임프린트 장치, 임프린트 시스템 및 물품 제조 방법

Also Published As

Publication number Publication date
TW301037B (enExample) 1997-03-21
KR950015554A (ko) 1995-06-17
US6022672A (en) 2000-02-08

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