KR100268965B1 - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR100268965B1
KR100268965B1 KR1019970015499A KR19970015499A KR100268965B1 KR 100268965 B1 KR100268965 B1 KR 100268965B1 KR 1019970015499 A KR1019970015499 A KR 1019970015499A KR 19970015499 A KR19970015499 A KR 19970015499A KR 100268965 B1 KR100268965 B1 KR 100268965B1
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KR
South Korea
Prior art keywords
film
diffusion layer
impurity diffusion
type impurity
forming
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KR1019970015499A
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English (en)
Korean (ko)
Inventor
켄 이오누에
Original Assignee
가네꼬 히사시
닛본 덴기 가부시끼가이샤
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Application filed by 가네꼬 히사시, 닛본 덴기 가부시끼가이샤 filed Critical 가네꼬 히사시
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Publication of KR100268965B1 publication Critical patent/KR100268965B1/ko

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019970015499A 1996-04-25 1997-04-25 반도체장치 및 그 제조방법 KR100268965B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-105207 1996-04-25
JP8105207A JPH09293790A (ja) 1996-04-25 1996-04-25 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
KR100268965B1 true KR100268965B1 (ko) 2000-10-16

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ID=14401230

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970015499A KR100268965B1 (ko) 1996-04-25 1997-04-25 반도체장치 및 그 제조방법

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JP (1) JPH09293790A (ja)
KR (1) KR100268965B1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6693001B2 (en) 1997-03-14 2004-02-17 Renesas Technology Corporation Process for producing semiconductor integrated circuit device
US6858484B2 (en) 2000-02-04 2005-02-22 Hitachi, Ltd. Method of fabricating semiconductor integrated circuit device
JP3408463B2 (ja) 1999-08-17 2003-05-19 日本電気株式会社 半導体装置の製造方法
KR20010066327A (ko) * 1999-12-31 2001-07-11 박종섭 듀얼 게이트전극 제조방법
KR100356482B1 (ko) * 2000-12-22 2002-10-18 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성 방법
KR100514166B1 (ko) * 2004-01-20 2005-09-13 삼성전자주식회사 상보형 반도체 소자 형성방법
JP4917328B2 (ja) * 2006-02-28 2012-04-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH09293790A (ja) 1997-11-11

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