KR100253033B1 - Voltage limit circuit of semiconductor memory - Google Patents

Voltage limit circuit of semiconductor memory Download PDF

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Publication number
KR100253033B1
KR100253033B1 KR1019920012425A KR920012425A KR100253033B1 KR 100253033 B1 KR100253033 B1 KR 100253033B1 KR 1019920012425 A KR1019920012425 A KR 1019920012425A KR 920012425 A KR920012425 A KR 920012425A KR 100253033 B1 KR100253033 B1 KR 100253033B1
Authority
KR
South Korea
Prior art keywords
semiconductor memory
voltage limit
limit circuit
circuit
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019920012425A
Other languages
English (en)
Korean (ko)
Other versions
KR930003381A (ko
Inventor
Jyun Eto
Masakaz Aoki
Masashi Horygutsi
Shigeki Ueda
Hitoshi Danaka
Kazhiko Kajikaya
Tsukio Dakahashi
Hiroshi Kawamoto
Original Assignee
Hitachi Ulsi Eng Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16182367&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR100253033(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hitachi Ulsi Eng Corp, Hitachi Ltd filed Critical Hitachi Ulsi Eng Corp
Publication of KR930003381A publication Critical patent/KR930003381A/ko
Application granted granted Critical
Publication of KR100253033B1 publication Critical patent/KR100253033B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
KR1019920012425A 1991-07-25 1992-07-13 Voltage limit circuit of semiconductor memory Expired - Lifetime KR100253033B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-186100 1991-07-25
JP18610091A JP3184251B2 (ja) 1991-07-25 1991-07-25 半導体装置

Publications (2)

Publication Number Publication Date
KR930003381A KR930003381A (ko) 1993-02-24
KR100253033B1 true KR100253033B1 (en) 2000-04-15

Family

ID=16182367

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920012425A Expired - Lifetime KR100253033B1 (en) 1991-07-25 1992-07-13 Voltage limit circuit of semiconductor memory

Country Status (4)

Country Link
US (1) US5383080A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3184251B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100253033B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW223705B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2784622C1 (ru) * 2022-08-17 2022-11-29 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Генератор последовательностей импульсов

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2715724B2 (ja) * 1991-08-27 1998-02-18 日本電気株式会社 半導体集積回路
JP3450909B2 (ja) * 1994-09-27 2003-09-29 三菱電機株式会社 半導体装置
JP3369807B2 (ja) 1995-08-30 2003-01-20 株式会社東芝 半導体装置
US5748028A (en) * 1996-10-31 1998-05-05 International Business Machines Corporation Method and apparatus for multi-level input voltage receiver circuit
US6502273B1 (en) 1996-11-08 2003-01-07 Kanebo, Ltd. Cleaning sponge roller
JP3309898B2 (ja) * 1997-06-17 2002-07-29 日本電気株式会社 電源回路
KR100487502B1 (ko) * 1997-11-18 2005-07-07 삼성전자주식회사 트리플 와이어 본딩을 이용한 마이크로컴퓨터
US7064613B2 (en) * 2002-03-25 2006-06-20 Lucent Technologies Inc. Amplifier bias system and method
US6781355B2 (en) * 2002-10-18 2004-08-24 Sun Microsystems, Inc. I/O power supply resonance compensation technique
JP2006194639A (ja) 2005-01-11 2006-07-27 Denso Corp レーダ装置
US8106474B2 (en) * 2008-04-18 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9542639B1 (en) * 2015-06-29 2017-01-10 Em Microelectronic-Marin Sa RFID transponder with rectifier and voltage limiter
JP6792391B2 (ja) * 2016-09-26 2020-11-25 新日本無線株式会社 半導体集積回路装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770216B2 (ja) * 1985-11-22 1995-07-31 株式会社日立製作所 半導体集積回路
US4731719A (en) * 1986-11-19 1988-03-15 Linear Technology Corporation Current boosted switching regulator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2784622C1 (ru) * 2022-08-17 2022-11-29 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Генератор последовательностей импульсов

Also Published As

Publication number Publication date
US5383080A (en) 1995-01-17
KR930003381A (ko) 1993-02-24
JP3184251B2 (ja) 2001-07-09
TW223705B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-05-11
JPH0528759A (ja) 1993-02-05

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