KR100246315B1 - Forming method of metal layer using multi-direction collimator - Google Patents
Forming method of metal layer using multi-direction collimator Download PDFInfo
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- KR100246315B1 KR100246315B1 KR1019960064993A KR19960064993A KR100246315B1 KR 100246315 B1 KR100246315 B1 KR 100246315B1 KR 1019960064993 A KR1019960064993 A KR 1019960064993A KR 19960064993 A KR19960064993 A KR 19960064993A KR 100246315 B1 KR100246315 B1 KR 100246315B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/548—Controlling the composition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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Abstract
본 발명은 멀티-디렉션 콜리메이터(Multi-Direction collimator)를 이용함으로써 균일한 박막을 형성할 수 있도록 한 금속박막 형성방법에 관한 것으로, 멀티-디렉션 콜리메이터(MDC)를 이용한 금속박막 형성방법은, 소정의 전도층 위에 층간절연층을 형성한 후, 그 층간절연층을 패터닝하여 콘택홀을 형성하는 단계와, 그 결과 물 위에 금속을 증착하는 단계와, 그 금속막을 패터닝하는 단계로 이루어지는 금속 배선 형성공정에 있어서, 금속을 증착하는 단계가 웨이퍼와 금속타겟 사이에 장착된 멀티-디렉션 콜리메이터의 경사각이 다양하게 변화되도록 하면서 이루어지는 것을 특징으로 한다. 이와 같은 금속박막 형성방법은, 금속박막이 콘택홀의 하면 뿐만 아니라 측면에서 균일하게 증착되는 효과가 있다.The present invention relates to a method for forming a metal thin film that allows a uniform thin film to be formed by using a multi-direction collimator, and a method for forming a metal thin film using a multi-direction collimator (MDC) is provided. After the interlayer insulating layer is formed over the conductive layer, the interlayer insulating layer is patterned to form contact holes, the resulting metal is deposited on the water, and the metal film is patterned. In this case, the step of depositing the metal is characterized in that the inclination angle of the multi-direction collimator mounted between the wafer and the metal target is varied in various ways. Such a metal thin film forming method has the effect that the metal thin film is uniformly deposited on the side surface as well as the bottom surface of the contact hole.
Description
본 발명은 반도체소자 제조장치를 이용한 반도체소자 제조방법에 관한 것으로, 특히 플레이트(Plate)가 다양한 경사각을 갖도록 구동됨으로써 그를 관통하는 스퍼터 입자가 다양한 방향성을 갖도록 한 멀티-디렉션 콜리메이터(Multi-Direction Collimator)를 이용함으로써 균일한 박막을 형성할 수 있도록한 금속박막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device using a semiconductor device manufacturing apparatus. In particular, a plate is driven to have various inclination angles, so that the sputter particles penetrating therethrough have various directions. By using the present invention relates to a metal thin film forming method to form a uniform thin film.
반도체소자 제조공정에 있어서, 층간절연층을 사이에 두고 하부의 전도층과 상부의 금속층을 접속시키기 위한 배선공정은, 상기 층간절연층을 부분 식각하여 콘택홀(CONTACT HOLE. VIA HOLE)을 형성하는 공정과, 그 콘택홀이 형성된 층간절연층 위에 금속을 증착하는 공정을 포함하여 구성된다. 이하, 첨부된 도면을 참조하여 종래기술에 따른 상기 금속증착공정에 대해서 설명하면 다음과 같다.In a semiconductor device manufacturing process, a wiring process for connecting a lower conductive layer and an upper metal layer with an interlayer insulating layer interposed therebetween, partially etching the interlayer insulating layer to form a contact hole (CONTACT HOLE. VIA HOLE). And depositing a metal on the interlayer insulating layer in which the contact hole is formed. Hereinafter, the metal deposition process according to the prior art with reference to the accompanying drawings as follows.
제1도는 종래의 통상적인 금속증착공정에 따라 형성된 금속층의 단면구조를 보여주는 단면도로서, 통상적인 스퍼터법으로 금속(21)을 증착하면, 콘택홀 내부에서 상기 금속막(21)의 스텝-커버리지가 불량하게 됨을 보여주고 있다. 즉, 콘택홀의 측면 상부 및 하면 중심부에서는 금속(21)이 많이 증착되지만, 그 콘택홀의 측면 하부 및 하면의 둘레영역에서는 적게 증착됨으로써, 콘택홀 내부에서의 전체적인 스텝-커버리지가 불량하게 되었다.FIG. 1 is a cross-sectional view showing a cross-sectional structure of a metal layer formed according to a conventional metal deposition process. When the metal 21 is deposited by a conventional sputtering method, step-coverage of the metal film 21 inside a contact hole is reduced. It is showing badness. That is, a large amount of metal 21 is deposited in the upper side of the contact hole and the lower surface of the contact hole, but less in the peripheral area of the lower side and the lower surface of the contact hole, so that the overall step-coverage in the contact hole is poor.
그리고, 제2(a)도와 제2(b)도 및 제3도는 상기 통상적인 금속증착공정의 문제점을 개선하기 위하여 제안된 종래 기술의 다른 실실시예를 나타낸 도면으로서, 제2(a)도와 제2(b)도는 스퍼터입자에 방향성을 주기 위한 콜리메이터의 평면도 및 단면도이며, 제3도는 상기 콜리메이터를 사용하는 금속증착공정을 나타낸 금속증착공정 단면도이다. 이에 대해서 설명하면 다음과 같다.2 (a), 2 (b), and 3 are views showing another embodiment of the prior art proposed to improve the problems of the conventional metal deposition process. FIG. 2 (b) is a plan view and a cross-sectional view of a collimator for directing sputter particles, and FIG. 3 is a cross-sectional view of a metal deposition process showing a metal deposition process using the collimator. This is described below.
스퍼터입자에 방향성을 주기 위한 콜리메이터(30)는 제2(a)도와 제2(b)도에 도시된 바와 같이 다수의 플레이트(31-34)가 그들의 평면이 수직하게 된 상태에서 가로(X) 및 세로(Y) 방향으로 배치됨에 따라 서로 수직하게 교차함으로써, 그 플레이트들(31-34)에 의해서 형성된 수직 관통하는 다수의 영역이 매트릭스(MATRIX) 구조를 이루게 된다.The collimator 30 for directing the sputter particles has a horizontal (X) in a state where the plurality of plates 31-34 are vertical in their planes, as shown in Figs. 2 (a) and 2 (b). And vertically intersect with each other as disposed in the vertical (Y) direction, such that a plurality of vertically penetrating regions formed by the plates 31-34 form a matrix structure.
이와 같이 구성된 콜리메이터(30)를 이용한 금속증착공정은, 제3도에 도시된 바와 같이 타겟(TARGET)(40)과 웨이퍼(실리콘기판)(10) 사이에 콜리메이터(30)를 삽입한 상태에서 스퍼터 증착공정을 수행하였다. 이때, 타겟(40)으로부터 떨어져 나오는 스퍼터입자는 콜리메이터(30)를 통과한 경우에만 웨이퍼(10) 위에 증착되었다. 즉, 타겟(40)에서 떨어져 나온 스퍼터입자가 소정의 입사각 범위내에 있을 때에만 그 스퍼터입자가 웨이퍼(10) 위에 증착되고, 그 스퍼터입자의 입사각이 상기 소정의 입사각 범위를 벗어난 경우에는 콜리메이터(30)의 플레이트(31-34)에 증착되거나 그곳에서 반사되어 새로운 입사각으로 웨이퍼(10)에 증착되었다. 이에 따라, 그의 최상층에 콘택홀패턴(12)이 형성되어 있는 웨이퍼(10) 위에 상기와 같은 금속증착 방법으로 금속(22)을 증착하게 되면, 콘택홀의 하면 뿐만 아니라 측면에 형성된 금속막(22)이 각 영역에서 균일한 두께로 형성되었다.In the metal deposition process using the collimator 30 configured as described above, as shown in FIG. 3, the sputter is formed while the collimator 30 is inserted between the target TARGET 40 and the wafer (silicon substrate) 10. The deposition process was performed. At this time, the sputtered particles falling off the target 40 were deposited on the wafer 10 only when passing through the collimator 30. That is, the sputter particles are deposited on the wafer 10 only when the sputter particles separated from the target 40 are within the predetermined incidence angle range, and when the incident angle of the sputter particles is out of the predetermined incidence angle range, the collimator 30 The plate 31-34 is deposited on or reflected thereon and deposited on the wafer 10 at a new angle of incidence. Accordingly, when the metal 22 is deposited on the wafer 10 having the contact hole pattern 12 formed on the uppermost layer by the metal deposition method as described above, the metal film 22 formed on the side surface as well as the bottom surface of the contact hole is formed. In each of these areas, a uniform thickness was formed.
그러나, 상기와 같이 콜리메이터가 고정된 상태에서만 스퍼터입자의 입사각을 조절하도록 구성된 종래 기술은, 콘택홀의 측면에 쌓이는 스퍼터입자의 수가 감소하게 됨으로써, 그 영역의 금속막이 얇게 형성되는 문제점이 있었다.However, the conventional technique configured to adjust the angle of incidence of the sputter particles only in the state where the collimator is fixed as described above has a problem in that the number of sputter particles accumulated on the side of the contact hole is reduced, whereby the metal film in the region is formed thin.
이에 본 발명은 상기와 같은 문제점을 해결하기 위하여 창안한 것으로, 스퍼터입자에 대해서 다양한 입사각으로 방향성을 줄 수 있는 멀티-디렉션 콜리메이터(Multi-Direction collimator)를 이용함으로써 균일한 박막을 형성할 수 있도록 한 금속박막 형성방법을 제공함에 목적이 있다.Accordingly, the present invention has been made to solve the above problems, it is possible to form a uniform thin film by using a multi-direction collimator that can give a direction at various angles of incidence to the sputter particles It is an object to provide a method for forming a metal thin film.
제1도는 종래의 통상적인 스퍼터법으로 증착된 금속박막의 구조를 나타낸 단면도.1 is a cross-sectional view showing the structure of a metal thin film deposited by a conventional conventional sputtering method.
제2(a)도와 제2(b)도는 종래 콜리메이터(Collimator)의 구조를 나타낸 평면도 및 측단면도.2 (a) and 2 (b) are a plan view and a side cross-sectional view showing the structure of a conventional collimator (Collimator).
제3도는 상기 제2(a)도 및 제2(b)도에 도시된 종래 콜리메이터를 이용한 종래 기술에 따른 금속박막 형성방법을 나타낸 단면도.3 is a cross-sectional view showing a metal thin film forming method according to the prior art using the conventional collimator shown in Figs. 2 (a) and 2 (b).
제4(a)도-제4(c)도는 본 발명에 따른 멀티-디렉션 콜리메이터를 이용한 금속박막 형성방법을 나타낸 단면도.4 (a) to 4 (c) are cross-sectional views showing a method of forming a metal thin film using a multi-direction collimator according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10 : 웨이퍼(실리콘기판) 12 : 층간절연층(콘택홀패턴)10: wafer (silicon substrate) 12: interlayer insulating layer (contact hole pattern)
23a,23b,23c : 금속박막 50 : 멀티-디렉션 콜리메이터23a, 23b, 23c: metal thin film 50: multi-direction collimator
51,52 : 플레이트51,52: Plate
상기 목적을 달성하기 위한 본 발명 금속박막 형성방법은, 소정의 전도층 위에 층간절연층을 형성한 후, 그 층간절연층을 패터닝하여 콘택홀을 형성하는 단계와, 그 결과물 위에 금속을 증착하는 단계와, 그 금속막을 패터닝하는 단계로 이루어지는 금속배선 형성공정에 있어서, 금속을 증착하는 단계가 웨이퍼와 금속타겟 사이에 장착된 멀티-디렉션 콜리메이터의 경사각이 다양하게 변화되도록 하면서 이루어지는 것을 특징으로 한다.In order to achieve the above object, the present invention provides a method of forming a metal thin film, after forming an interlayer insulating layer on a predetermined conductive layer, patterning the interlayer insulating layer to form a contact hole, and depositing a metal on the resultant. And in the metallization forming process comprising patterning the metal film, wherein the depositing the metal is performed while varying the inclination angle of the multi-direction collimator mounted between the wafer and the metal target.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예에 대해서 상세히 설명하면 다음과 같다. 여기서, 첨부한 도면 제4(a)도-제4(c)도는 본 발명에 따른 금속박막 형성방법을 나타낸 공정단면도로서, 타겟과 웨이퍼 사이에서 그 타겟으로부터 떨어져 나온 금속입자에 다양한 방향성을 주도록 동작하는 멀티-디렉션 콜리메이터의 동작 상태도 도시되었다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. 4 (a) to 4 (c) are process cross-sectional views showing a method of forming a metal thin film according to the present invention, and are operated to give various directions to metal particles separated from the target between the target and the wafer. The operating state of the multi-direction collimator is also shown.
우선, 본 발명의 바람직한 실시예에 따른 멀티-디렉션 콜리메이터의 구성 및 동작에 대해서 제4(a)도-제4(b)도를 참조하여 설명한다.First, the configuration and operation of the multi-direction collimator according to the preferred embodiment of the present invention will be described with reference to FIGS. 4 (a) to 4 (b).
다수의 플레이트(51,52)가 그들의 평면이 수직하게 된 상태에서 가로(X) 및 세로(Y) 방향으로 배치됨에 따라 서로 수직하게 교차함으로써 그 플레이트(51,52)에 의해서 형성된 다수의 수직 관통영역이 매트릭스(MATRIX) 구조를 이룸과 아울러 그 각 플레이트(51,52)의 연결부에 가로(X) 및 세로(Y) 방향으로 움직일 수 있도록 하는 소정의 이동수단이 구비되고, 소정의 구동제어신호를 인가받아 동작하는 플레이트 구동부가 상기와 같이 서로 연결된 플레이트(51,52)의 상단부와 하단부에 힘을 가하여 그 플레이트(51,52)가 소정의 방향으로 기울어지도록 함으로써, 플레이트(51,52)의 경사각을 다양하게 변경할 수 있도록 구성된다.Multiple vertical penetrations formed by the plates 51, 52 by crossing them perpendicularly to each other as they are arranged in the horizontal (X) and vertical (Y) directions with their planes perpendicular to each other. A predetermined movement means is provided for allowing the region to form a matrix structure and to move in the horizontal (X) and vertical (Y) directions at the connecting portions of the plates 51 and 52, and the predetermined drive control signal. The plate driving unit operating by applying the force exerts a force on the upper end and the lower end of the plates 51 and 52 connected to each other as described above so that the plates 51 and 52 are inclined in a predetermined direction. It is configured to change the inclination angle in various ways.
이와 같이 구성된 멀티-디렉션 콜리메이터의 동작에 대한 일례로서, 제4(a)도와 같이 플레이트(51,52)가 수직하게 하거나, 제4(b)도와 같이 플레이트 구동부로부터 상단부는 우측으로 향하는 힘(→)을 인가받는 반면에 하단부는 좌측으로 향하는 힘(←)을 인가받아 플레이트(51,52)가 양(+)의 가로(X) 방향[양의 세로(Y) 방향]으로 기울어지도록 하거나, 제4(c)도와 같이 상단부는 좌측으로 향하는 힘(←)을 인가받는 반면에 하단부는 우측으로 향하는 힘(→)을 인가받아 플레이트(51,52)가 음(-)의 가로(X) 방향[음의 세로(Y) 방향]으로 기울어지도록 할 수 있다.As an example of the operation of the multi-direction collimator configured as described above, the plates 51 and 52 are perpendicular to each other as shown in FIG. 4 (a), or the force of the upper end portion to the right from the plate driver as shown in FIG. 4 (b) (→ ), While the lower end portion is applied with a force (←) directed to the left side, the plates 51 and 52 are inclined in the positive (X) direction (the positive (Y) direction), or As shown in Fig. 4 (c), the upper end receives the force to the left (←) while the lower end receives the force to the right (→) and the plates 51 and 52 are in the negative (-) horizontal (X) direction [ Negative vertical (Y) direction].
이하, 상기와 같은 멀티-디렉션 콜리메이터를 이용하여 금속박막을 형성하는 방법에 대해서 제4(a)도-제4(c)도를 참조하여 설명하면 다음과 같다.Hereinafter, a method of forming a metal thin film using the multi-direction collimator as described above will be described with reference to FIGS. 4 (a) to 4 (c).
콘택홀패턴(12)이 형성된 웨이퍼(10)에 금속을 증착하기 위한 스퍼터링이 시작되면, 제4(a)도에 도시된 바와 같이 웨이퍼(10) 위쪽에 장착된 멀티-디렉션 콜리메이터(50)의 각 플레이트(51,52)를 수직하게 한 상태에서 소정의 제1시간(t1) 동안 스퍼터링을 수행한다. 이때, 웨이퍼(10) 위에 증착되는 스퍼터입자는 수직면(콘택홀의 측면) 보다 수평면(콘택홀의 하면)에 더 많이 쌓이게 된다(23a).When the sputtering for depositing the metal on the wafer 10 on which the contact hole pattern 12 is formed starts, as shown in FIG. 4 (a), the multi-direction collimator 50 mounted on the wafer 10 is mounted. Sputtering is performed for a predetermined first time t1 while the plates 51 and 52 are made vertical. At this time, the sputtered particles deposited on the wafer 10 are more stacked on the horizontal surface (the lower surface of the contact hole) than the vertical surface (the side of the contact hole) (23a).
이후, 상기 제1시간이 경과하면, 제4(b)도에 도시된 바와 같이 상기 멀티-디렉센 콜리메이터(50)의 플레이트(51,52)를 양(+)의 가로(X) 방향[양의 세로(Y) 방향]으로 기울인 상태에서 소정의 제2시간(t2) 동안 상기와 동일할 스퍼터링을 지속한다. 이때, 웨이퍼(10) 위에 증착되는 스퍼터입자는 콘택홀의 우측면(하면의 우측영역 포함) 보다 좌측면(하면의 좌측영역 포함)에 많이 쌓인다(23b).Thereafter, when the first time elapses, as shown in FIG. 4 (b), the plates 51 and 52 of the multi-directene collimator 50 are moved in a positive (+) horizontal (X) direction [both Sputtering to be the same as above for a predetermined second time t2 in the inclined state in the longitudinal (Y) direction of?]. At this time, the sputtered particles deposited on the wafer 10 are more accumulated on the left side (including the left region of the lower surface) than the right side (including the right region of the lower surface) of the contact hole (23b).
이어서, 상기 제2시간이 경과하면, 제4(c)도에 도시된 바와 같이 상기 멀티-디렉션 콜리메이커(50)의 플레이트(51,52)를 음(-)의 가로(X) 방향[음의 세로(Y) 방향]으로 기울인 상태에서 소정의 제3시간(t3) 동안 상기와 동일한 스퍼터링을 지속한다. 이때, 웨이퍼(10) 위에 증착되는 스퍼터입자는 콘택홀의 좌측면(하면의 좌측영역 포함) 보다 우측면(하면의 우측영역 포함)에 더 많이 쌓인다(23c).Subsequently, when the second time elapses, the plates 51 and 52 of the multi-direction collimator 50 are moved in the negative (X) direction [negative] as shown in FIG. 4 (c). The same sputtering is continued for a predetermined third time t3 in the state of tilting in the longitudinal (Y) direction of the. At this time, the sputtered particles deposited on the wafer 10 are more accumulated on the right side (including the right side of the bottom) than the left side (including the left side of the bottom) of the contact hole (23c).
이와 같은 3단계 공정을 통해 증착된 금속막(23c)은 콘택홀의 하면 뿐만 아니라 측면에서 균일하게 증착된다. 이때, 상기와 같이 가로(X) 방향에 따라 좌우로 경사지게 멀티-디렉션 콜리메이터(50)를 구동하는 방법은, 이후의 패터닝공정을 통해 완성되는 금속배선이 가로(X) 방향으로 형성되는 경우에 적용하면 바람직하다.The metal film 23c deposited through such a three-step process is uniformly deposited on the side surface as well as the bottom surface of the contact hole. At this time, the method of driving the multi-direction collimator 50 to be inclined left and right according to the horizontal (X) direction as described above, is applied when the metal wiring is completed in the horizontal (X) direction through the subsequent patterning process Is preferable.
상술한 바와 같이, 금속박막 증착공정이 웨이퍼와 금속타겟 사이에 장착된 멀티-디렉션 콜리메이터의 경사각을 다양하게 변화시키면서 이루어지는 본 발명은, 금속박막이 콘택홀의 하면 뿐만 아니라 측면에서 균일하게 증착되는 효과가 있다.As described above, the present invention is achieved by varying the inclination angle of the multi-direction collimator mounted between the wafer and the metal target, the metal thin film deposition process has the effect that the metal thin film is uniformly deposited on the side as well as the bottom of the contact hole. have.
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