KR100188090B1 - 액정 표시 장치용 박막 트랜지스터 기판의 및 그 제조방법 - Google Patents

액정 표시 장치용 박막 트랜지스터 기판의 및 그 제조방법 Download PDF

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Publication number
KR100188090B1
KR100188090B1 KR1019950035200A KR19950035200A KR100188090B1 KR 100188090 B1 KR100188090 B1 KR 100188090B1 KR 1019950035200 A KR1019950035200 A KR 1019950035200A KR 19950035200 A KR19950035200 A KR 19950035200A KR 100188090 B1 KR100188090 B1 KR 100188090B1
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KR
South Korea
Prior art keywords
gate electrode
insulating film
gate
polycrystalline silicon
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019950035200A
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English (en)
Korean (ko)
Other versions
KR970024303A (ko
Inventor
이주형
허재호
Original Assignee
김광호
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자주식회사 filed Critical 김광호
Priority to KR1019950035200A priority Critical patent/KR100188090B1/ko
Priority to TW085110952A priority patent/TWI246620B/zh
Priority to JP27048196A priority patent/JP3774278B2/ja
Publication of KR970024303A publication Critical patent/KR970024303A/ko
Application granted granted Critical
Publication of KR100188090B1 publication Critical patent/KR100188090B1/ko
Priority to JP2005172379A priority patent/JP4312741B2/ja
Priority to JP2008232509A priority patent/JP2009048199A/ja
Assigned to 삼성디스플레이 주식회사 reassignment 삼성디스플레이 주식회사 권리의 전부이전등록 Assignors: 삼성전자 주식회사
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
KR1019950035200A 1995-10-12 1995-10-12 액정 표시 장치용 박막 트랜지스터 기판의 및 그 제조방법 Expired - Lifetime KR100188090B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019950035200A KR100188090B1 (ko) 1995-10-12 1995-10-12 액정 표시 장치용 박막 트랜지스터 기판의 및 그 제조방법
TW085110952A TWI246620B (en) 1995-10-12 1996-09-07 A thin film transistor for liquid crystal display and a method for manufacturing the same
JP27048196A JP3774278B2 (ja) 1995-10-12 1996-10-14 液晶表示装置用薄膜トランジスタ基板の製造方法
JP2005172379A JP4312741B2 (ja) 1995-10-12 2005-06-13 液晶表示装置用薄膜トランジスタ基板およびその製造方法
JP2008232509A JP2009048199A (ja) 1995-10-12 2008-09-10 液晶表示装置用薄膜トランジスタ基板およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950035200A KR100188090B1 (ko) 1995-10-12 1995-10-12 액정 표시 장치용 박막 트랜지스터 기판의 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR970024303A KR970024303A (ko) 1997-05-30
KR100188090B1 true KR100188090B1 (ko) 1999-07-01

Family

ID=19430017

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950035200A Expired - Lifetime KR100188090B1 (ko) 1995-10-12 1995-10-12 액정 표시 장치용 박막 트랜지스터 기판의 및 그 제조방법

Country Status (3)

Country Link
JP (3) JP3774278B2 (https=)
KR (1) KR100188090B1 (https=)
TW (1) TWI246620B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3318285B2 (ja) 1999-05-10 2002-08-26 松下電器産業株式会社 薄膜トランジスタの製造方法
KR101781175B1 (ko) * 2015-08-31 2017-09-22 가천대학교 산학협력단 초박막 저결정성 실리콘 채널을 갖는 무접합 전계효과 트랜지스터 및 그 제조방법
JP6864158B2 (ja) * 2018-06-22 2021-04-28 住友重機械工業株式会社 半導体装置のレーザーアニール方法およびレーザーアニール方法
CN109920731B (zh) * 2019-03-20 2021-03-19 上海华虹宏力半导体制造有限公司 多晶硅薄膜晶体管及其制作方法
CN115497816B (zh) * 2022-10-19 2023-10-17 弘大芯源(深圳)半导体有限公司 一种半导体场效应集成电路及制备方法

Also Published As

Publication number Publication date
JP3774278B2 (ja) 2006-05-10
JP4312741B2 (ja) 2009-08-12
TWI246620B (en) 2006-01-01
JPH09133928A (ja) 1997-05-20
KR970024303A (ko) 1997-05-30
JP2009048199A (ja) 2009-03-05
JP2005326867A (ja) 2005-11-24

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