KR0176714B1 - 드라이에칭방법 - Google Patents
드라이에칭방법 Download PDFInfo
- Publication number
- KR0176714B1 KR0176714B1 KR1019910000925A KR910000925A KR0176714B1 KR 0176714 B1 KR0176714 B1 KR 0176714B1 KR 1019910000925 A KR1019910000925 A KR 1019910000925A KR 910000925 A KR910000925 A KR 910000925A KR 0176714 B1 KR0176714 B1 KR 0176714B1
- Authority
- KR
- South Korea
- Prior art keywords
- etching
- hbr
- gas
- melting point
- layer
- Prior art date
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR1992/000004 WO1992012810A1 (en) | 1991-01-21 | 1992-01-20 | Postal code column to read with machine |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010489A JP2591209B2 (ja) | 1990-01-22 | 1990-01-22 | ドライエッチング方法 |
JP90-10489 | 1990-01-22 | ||
JP90-47074 | 1990-02-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR0176714B1 true KR0176714B1 (ko) | 1999-04-15 |
Family
ID=11751590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910000925A KR0176714B1 (ko) | 1990-01-22 | 1991-01-21 | 드라이에칭방법 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2591209B2 (ja) |
KR (1) | KR0176714B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100749978B1 (ko) * | 2001-02-23 | 2007-08-16 | 동경 엘렉트론 주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0496223A (ja) * | 1990-08-03 | 1992-03-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3198586B2 (ja) * | 1992-02-14 | 2001-08-13 | ソニー株式会社 | ドライエッチング方法 |
JP2906997B2 (ja) * | 1994-04-22 | 1999-06-21 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2991177B2 (ja) * | 1997-12-15 | 1999-12-20 | 日本電気株式会社 | 半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6031906B2 (ja) * | 1977-05-13 | 1985-07-25 | 株式会社日立製作所 | アルミニウム膜もしくは基合金膜の加工方法 |
EP0272143B1 (en) * | 1986-12-19 | 1999-03-17 | Applied Materials, Inc. | Bromine etch process for silicon |
JPS648626A (en) * | 1987-07-01 | 1989-01-12 | Fujitsu Ltd | Dry etching of silicon using bromine gas |
JPH0817169B2 (ja) * | 1988-03-11 | 1996-02-21 | 株式会社日立製作所 | プラズマエッチング方法 |
-
1990
- 1990-01-22 JP JP2010489A patent/JP2591209B2/ja not_active Expired - Lifetime
-
1991
- 1991-01-21 KR KR1019910000925A patent/KR0176714B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100749978B1 (ko) * | 2001-02-23 | 2007-08-16 | 동경 엘렉트론 주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
Also Published As
Publication number | Publication date |
---|---|
JPH03215938A (ja) | 1991-09-20 |
JP2591209B2 (ja) | 1997-03-19 |
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