KR0176714B1 - 드라이에칭방법 - Google Patents

드라이에칭방법 Download PDF

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Publication number
KR0176714B1
KR0176714B1 KR1019910000925A KR910000925A KR0176714B1 KR 0176714 B1 KR0176714 B1 KR 0176714B1 KR 1019910000925 A KR1019910000925 A KR 1019910000925A KR 910000925 A KR910000925 A KR 910000925A KR 0176714 B1 KR0176714 B1 KR 0176714B1
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KR
South Korea
Prior art keywords
etching
hbr
gas
melting point
layer
Prior art date
Application number
KR1019910000925A
Other languages
English (en)
Korean (ko)
Inventor
데쓰야 다쓰미
신고 가도무라
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Priority to PCT/KR1992/000004 priority Critical patent/WO1992012810A1/en
Application granted granted Critical
Publication of KR0176714B1 publication Critical patent/KR0176714B1/ko

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  • Drying Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019910000925A 1990-01-22 1991-01-21 드라이에칭방법 KR0176714B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/KR1992/000004 WO1992012810A1 (en) 1991-01-21 1992-01-20 Postal code column to read with machine

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010489A JP2591209B2 (ja) 1990-01-22 1990-01-22 ドライエッチング方法
JP90-10489 1990-01-22
JP90-47074 1990-02-27

Publications (1)

Publication Number Publication Date
KR0176714B1 true KR0176714B1 (ko) 1999-04-15

Family

ID=11751590

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000925A KR0176714B1 (ko) 1990-01-22 1991-01-21 드라이에칭방법

Country Status (2)

Country Link
JP (1) JP2591209B2 (ja)
KR (1) KR0176714B1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100749978B1 (ko) * 2001-02-23 2007-08-16 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0496223A (ja) * 1990-08-03 1992-03-27 Fujitsu Ltd 半導体装置の製造方法
JP3198586B2 (ja) * 1992-02-14 2001-08-13 ソニー株式会社 ドライエッチング方法
JP2906997B2 (ja) * 1994-04-22 1999-06-21 日本電気株式会社 半導体装置の製造方法
JP2991177B2 (ja) * 1997-12-15 1999-12-20 日本電気株式会社 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031906B2 (ja) * 1977-05-13 1985-07-25 株式会社日立製作所 アルミニウム膜もしくは基合金膜の加工方法
EP0272143B1 (en) * 1986-12-19 1999-03-17 Applied Materials, Inc. Bromine etch process for silicon
JPS648626A (en) * 1987-07-01 1989-01-12 Fujitsu Ltd Dry etching of silicon using bromine gas
JPH0817169B2 (ja) * 1988-03-11 1996-02-21 株式会社日立製作所 プラズマエッチング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100749978B1 (ko) * 2001-02-23 2007-08-16 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법

Also Published As

Publication number Publication date
JPH03215938A (ja) 1991-09-20
JP2591209B2 (ja) 1997-03-19

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