KR0164591B1 - 집적회로 - Google Patents

집적회로 Download PDF

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Publication number
KR0164591B1
KR0164591B1 KR1019900018159A KR900018159A KR0164591B1 KR 0164591 B1 KR0164591 B1 KR 0164591B1 KR 1019900018159 A KR1019900018159 A KR 1019900018159A KR 900018159 A KR900018159 A KR 900018159A KR 0164591 B1 KR0164591 B1 KR 0164591B1
Authority
KR
South Korea
Prior art keywords
contact
region
semiconductor substrate
gate electrode
mis transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019900018159A
Other languages
English (en)
Korean (ko)
Other versions
KR910010704A (ko
Inventor
사사끼 미노루
Original Assignee
야마무라 가쯔미
세이꼬 엡슨 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야마무라 가쯔미, 세이꼬 엡슨 가부시끼 가이샤 filed Critical 야마무라 가쯔미
Publication of KR910010704A publication Critical patent/KR910010704A/ko
Application granted granted Critical
Publication of KR0164591B1 publication Critical patent/KR0164591B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019900018159A 1989-11-10 1990-11-10 집적회로 Expired - Fee Related KR0164591B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP29262789 1989-11-10
JP292627 1989-11-10
JP271555 1990-10-08
JP02271555A JP3041931B2 (ja) 1989-11-10 1990-10-08 Ｍｉｓトランジスタを備えた半導体集積回路

Publications (2)

Publication Number Publication Date
KR910010704A KR910010704A (ko) 1991-06-29
KR0164591B1 true KR0164591B1 (ko) 1999-01-15

Family

ID=17784249

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900018159A Expired - Fee Related KR0164591B1 (ko) 1989-11-10 1990-11-10 집적회로

Country Status (3)

Country Link
JP (1) JP3041931B2 (OSRAM)
KR (1) KR0164591B1 (OSRAM)
TW (2) TW230831B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250085122A (ko) 2023-12-05 2025-06-12 조대훈 안경의 탄성경첩

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685160A (ja) * 1992-08-31 1994-03-25 Nec Corp 半導体集積回路装置
WO2023223501A1 (ja) * 2022-05-19 2023-11-23 株式会社ソシオネクスト 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250085122A (ko) 2023-12-05 2025-06-12 조대훈 안경의 탄성경첩

Also Published As

Publication number Publication date
JPH03224270A (ja) 1991-10-03
JP3041931B2 (ja) 2000-05-15
TW230831B (OSRAM) 1994-09-21
KR910010704A (ko) 1991-06-29
TW273041B (OSRAM) 1996-03-21

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