TW230831B - - Google Patents

Info

Publication number
TW230831B
TW230831B TW081107077A TW81107077A TW230831B TW 230831 B TW230831 B TW 230831B TW 081107077 A TW081107077 A TW 081107077A TW 81107077 A TW81107077 A TW 81107077A TW 230831 B TW230831 B TW 230831B
Authority
TW
Taiwan
Application number
TW081107077A
Other languages
Chinese (zh)
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of TW230831B publication Critical patent/TW230831B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85Complementary IGFETs, e.g. CMOS
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
TW081107077A 1989-11-10 1990-11-16 TW230831B (OSRAM)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29262789 1989-11-10
JP02271555A JP3041931B2 (ja) 1989-11-10 1990-10-08 Misトランジスタを備えた半導体集積回路

Publications (1)

Publication Number Publication Date
TW230831B true TW230831B (OSRAM) 1994-09-21

Family

ID=17784249

Family Applications (2)

Application Number Title Priority Date Filing Date
TW081107077A TW230831B (OSRAM) 1989-11-10 1990-11-16
TW081107078A TW273041B (OSRAM) 1989-11-10 1990-11-16

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW081107078A TW273041B (OSRAM) 1989-11-10 1990-11-16

Country Status (3)

Country Link
JP (1) JP3041931B2 (OSRAM)
KR (1) KR0164591B1 (OSRAM)
TW (2) TW230831B (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685160A (ja) * 1992-08-31 1994-03-25 Nec Corp 半導体集積回路装置
WO2023223501A1 (ja) * 2022-05-19 2023-11-23 株式会社ソシオネクスト 半導体装置
KR20250085122A (ko) 2023-12-05 2025-06-12 조대훈 안경의 탄성경첩

Also Published As

Publication number Publication date
JPH03224270A (ja) 1991-10-03
JP3041931B2 (ja) 2000-05-15
KR910010704A (ko) 1991-06-29
TW273041B (OSRAM) 1996-03-21
KR0164591B1 (ko) 1999-01-15

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