KR0130736B1 - 집적회로 칩의 제위치 검사 방법 및 장치 - Google Patents

집적회로 칩의 제위치 검사 방법 및 장치

Info

Publication number
KR0130736B1
KR0130736B1 KR1019940003002A KR19940003002A KR0130736B1 KR 0130736 B1 KR0130736 B1 KR 0130736B1 KR 1019940003002 A KR1019940003002 A KR 1019940003002A KR 19940003002 A KR19940003002 A KR 19940003002A KR 0130736 B1 KR0130736 B1 KR 0130736B1
Authority
KR
South Korea
Prior art keywords
chip
contacts
inspection
semiconductor chip
dendrites
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940003002A
Other languages
English (en)
Korean (ko)
Other versions
KR940022769A (ko
Inventor
치누프라사드 바뜨 아닐쿠마르
레이몬드 부다 레오
더글라스 에드워즈 로버트
조세프 하트 폴
폴 잉그라함 앤소니
리스타 마르코비히 보야
아베딘 몰라 제이날
제랄드 머피 리차드
주니어 조지 삭스엔마이어
프레드릭 워커 조지
제이 왈렌 베트
스튜어트 자르 리차드
Original Assignee
윌리엄 티. 엘리스
인터내셔널 비지네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 티. 엘리스, 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 윌리엄 티. 엘리스
Publication of KR940022769A publication Critical patent/KR940022769A/ko
Application granted granted Critical
Publication of KR0130736B1 publication Critical patent/KR0130736B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2879—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/01—Subjecting similar articles in turn to test, e.g. "go/no-go" tests in mass production; Testing objects at points as they pass through a testing station
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
    • G01R31/281—Specific types of tests or tests for a specific type of fault, e.g. thermal mapping, shorts testing
    • G01R31/2812—Checking for open circuits or shorts, e.g. solder bridges; Testing conductivity, resistivity or impedance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H01L2224/05557—Shape in side view comprising protrusions or indentations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
KR1019940003002A 1993-03-01 1994-02-19 집적회로 칩의 제위치 검사 방법 및 장치 Expired - Fee Related KR0130736B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US2454993A 1993-03-01 1993-03-01
US8/024,549 1993-03-01
US08/024,549 1993-03-01

Publications (2)

Publication Number Publication Date
KR940022769A KR940022769A (ko) 1994-10-21
KR0130736B1 true KR0130736B1 (ko) 1998-04-06

Family

ID=21821176

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940003002A Expired - Fee Related KR0130736B1 (ko) 1993-03-01 1994-02-19 집적회로 칩의 제위치 검사 방법 및 장치

Country Status (6)

Country Link
US (1) US6414509B1 (enExample)
EP (1) EP0614089A3 (enExample)
JP (1) JP2528619B2 (enExample)
KR (1) KR0130736B1 (enExample)
CA (1) CA2110472C (enExample)
TW (1) TW232090B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5829128A (en) 1993-11-16 1998-11-03 Formfactor, Inc. Method of mounting resilient contact structures to semiconductor devices
US5917707A (en) 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5476211A (en) 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US7200930B2 (en) 1994-11-15 2007-04-10 Formfactor, Inc. Probe for semiconductor devices
US7084656B1 (en) 1993-11-16 2006-08-01 Formfactor, Inc. Probe for semiconductor devices
EP1441232A3 (en) * 1994-11-15 2009-11-04 FormFactor, Inc. Method for connecting electronic components
KR100394205B1 (ko) * 1994-11-15 2003-08-06 폼팩터, 인크. 시험된 반도체 장치 및 시험된 반도체 장치의 제조방법
US20100065963A1 (en) 1995-05-26 2010-03-18 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
US6142789A (en) * 1997-09-22 2000-11-07 Silicon Graphics, Inc. Demateable, compliant, area array interconnect
US7898275B1 (en) * 1997-10-03 2011-03-01 Texas Instruments Incorporated Known good die using existing process infrastructure
JP3553791B2 (ja) 1998-04-03 2004-08-11 株式会社ルネサステクノロジ 接続装置およびその製造方法、検査装置並びに半導体素子の製造方法
DE10127351A1 (de) 2001-06-06 2002-12-19 Infineon Technologies Ag Elektronischer Chip und elektronische Chip-Anordnung
US6764869B2 (en) * 2001-09-12 2004-07-20 Formfactor, Inc. Method of assembling and testing an electronics module
US6747472B2 (en) * 2002-01-18 2004-06-08 International Business Machines Corporation Temporary device attach structure for test and burn in of microjoint interconnects and method for fabricating the same
US6836134B2 (en) * 2002-06-11 2004-12-28 Delphi Technologies, Inc. Apparatus and method for determining leakage current between a first semiconductor region and a second semiconductor region to be formed therein
US9953824B2 (en) * 2006-09-12 2018-04-24 Lumileds Llc Lamp comprising a conductor embedded in the quartz glass envelope of the lamp
US8262768B2 (en) 2007-09-17 2012-09-11 Barrick Gold Corporation Method to improve recovery of gold from double refractory gold ores
US7922788B2 (en) 2007-09-18 2011-04-12 Barrick Gold Corporation Process for recovering gold and silver from refractory ores
US8262770B2 (en) 2007-09-18 2012-09-11 Barrick Gold Corporation Process for controlling acid in sulfide pressure oxidation processes
US9104568B2 (en) 2013-03-15 2015-08-11 International Business Machines Corporation Detection of memory cells that are stuck in a physical state
CN113990793A (zh) * 2021-10-21 2022-01-28 东莞市中麒光电技术有限公司 一种led芯片转移方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189825A (en) * 1975-06-04 1980-02-26 Raytheon Company Integrated test and assembly device
US4328286A (en) 1979-04-26 1982-05-04 The International Nickel Co., Inc. Electrodeposited palladium, method of preparation and electrical contact made thereby
JPS57110690A (en) 1980-12-24 1982-07-09 Ibm Growing of tentrite by electroplating
US4716124A (en) 1984-06-04 1987-12-29 General Electric Company Tape automated manufacture of power semiconductor devices
US4820976A (en) 1987-11-24 1989-04-11 Advanced Micro Devices, Inc. Test fixture capable of electrically testing an integrated circuit die having a planar array of contacts
EP0347561B1 (en) * 1988-06-21 1994-03-16 International Business Machines Corporation Separable electrical connection
US5137461A (en) * 1988-06-21 1992-08-11 International Business Machines Corporation Separable electrical connection technology
US5007163A (en) * 1990-04-18 1991-04-16 International Business Machines Corporation Non-destructure method of performing electrical burn-in testing of semiconductor chips
US5118299A (en) * 1990-05-07 1992-06-02 International Business Machines Corporation Cone electrical contact
GB2247565B (en) * 1990-08-22 1994-07-06 Gen Electric Co Plc A method of testing a semiconductor device
US5088190A (en) * 1990-08-30 1992-02-18 Texas Instruments Incorporated Method of forming an apparatus for burn in testing of integrated circuit chip
US5237269A (en) * 1991-03-27 1993-08-17 International Business Machines Corporation Connections between circuit chips and a temporary carrier for use in burn-in tests
US5523696A (en) * 1993-06-14 1996-06-04 International Business Machines Corp. Method and apparatus for testing integrated circuit chips
US5420520A (en) * 1993-06-11 1995-05-30 International Business Machines Corporation Method and apparatus for testing of integrated circuit chips
US5659256A (en) * 1993-06-11 1997-08-19 International Business Machines Corporation Method and apparatus for testing integrated circuit chips
US5494856A (en) * 1994-10-18 1996-02-27 International Business Machines Corporation Apparatus and method for creating detachable solder connections
US6037786A (en) * 1996-12-13 2000-03-14 International Business Machines Corporation Testing integrated circuit chips

Also Published As

Publication number Publication date
EP0614089A2 (en) 1994-09-07
TW232090B (enExample) 1994-10-11
CA2110472C (en) 1999-08-10
EP0614089A3 (en) 1995-07-12
JP2528619B2 (ja) 1996-08-28
US6414509B1 (en) 2002-07-02
CA2110472A1 (en) 1994-09-02
KR940022769A (ko) 1994-10-21
JPH06252226A (ja) 1994-09-09

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