KR0118691Y1 - Wafer holding apparatus - Google Patents
Wafer holding apparatusInfo
- Publication number
- KR0118691Y1 KR0118691Y1 KR2019940037361U KR19940037361U KR0118691Y1 KR 0118691 Y1 KR0118691 Y1 KR 0118691Y1 KR 2019940037361 U KR2019940037361 U KR 2019940037361U KR 19940037361 U KR19940037361 U KR 19940037361U KR 0118691 Y1 KR0118691 Y1 KR 0118691Y1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- vacuum
- vacuum pressure
- switch
- pedestal
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
본 고안의 웨이퍼 이송장치를 통하여 이송된 웨이퍼를 홀딩시키는 웨이퍼 홀딩장치를 개시한다.Disclosed is a wafer holding apparatus for holding a wafer transferred through a wafer transfer apparatus of the present invention.
본 고안은 진공압뿐만 아니라 기계적인 힘으로 작동되는 클램프를 이용하여 웨이퍼를 고정시킨다는 점을 감안하여 웨이퍼가 페데스탈에 정확하게 놓여진 상태에서 진공압 스위치와 공정제어부를 전기적으로 연결하는 라인에 접속된 별도의 보조스위치를 작동시켜 진공압 스위치가 작동되지 않은 상태에서도 공정제어부가 보조스위치의 작동을 진공압 스위치의 작동으로 간주하여 다음 공정의 진행을 실시하게 된다.The present invention considers that the wafer is fixed not only by vacuum pressure but also by mechanically operated clamps, and a separate line connected to a line electrically connecting the vacuum switch and the process control part while the wafer is correctly placed on the pedestal. Even if the vacuum switch is not activated by operating the auxiliary switch, the process control unit regards the operation of the auxiliary switch as the operation of the vacuum pressure switch to perform the next process.
Description
제1도는 일반적인 웨이퍼 홀딩장치중 웨이퍼가 안착되는 페데스탈의 부분 단면도.1 is a partial cross-sectional view of a pedestal in which a wafer is seated in a typical wafer holding apparatus.
제2도는 본 고안의 요지를 도시한 프로브의 부분 단면도.2 is a partial cross-sectional view of the probe showing the subject matter of the present invention.
*도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1:웨이퍼 홀딩장치 2:디스크1: Wafer holding device 2: Disc
3:페데스탈 4:프로브3: pedestal 4: probe
5:진공압 스위치 7:보조스위치5: vacuum pressure switch 7: auxiliary switch
본 고안은 반도체 제조장치에 관한 것으로서, 특히 진공압을 이용한 웨이퍼 홀딩시 불필요한 공정진행을 방지할 수 있도록 구성한 웨이퍼 홀딩장치에 관한 것이다.The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a wafer holding apparatus configured to prevent unnecessary process progress during wafer holding using vacuum pressure.
반도체 제조공정에 사용되는 장비, 예를 들어 웨이퍼 표면에 불순물인 이온을 주입하는 이온주입장비(Ion Implanter)는 웨이퍼를 이송시키는 웨이퍼 이송장치 및 이송된 웨이퍼를 홀딩(Holding)시키는 웨이퍼 홀딩장치로 구분되어 있으며, 웨이퍼 홀딩장치는 웨이퍼가 안착되는 디스크(Disk) 및 외부에서 발생된 진공압을 디스크에 공급하는 프로브(Probe)가 구비되어 있다.Equipment used in the semiconductor manufacturing process, for example, ion implanter (Ion Implanter) to inject impurities into the wafer surface is divided into a wafer transfer device for transferring the wafer and a wafer holding device for holding the transferred wafer (Hold Implanter) The wafer holding device includes a disk on which the wafer is seated and a probe for supplying a vacuum pressure generated from the outside to the disk.
일반적인 웨이퍼 홀딩장치를 간단하게 설명하면,In brief description of a general wafer holding device,
제1도는 일반적인 웨이퍼 홀딩장치중 웨이퍼가 안착되는 디스크(2)의 부분 단면도로서, 웨이퍼 홀딩장치(1)의 디스크(2)상에는 보통 8장의 웨이퍼가 놓여지게 구분되어지나 본 도면에서는 1장의 웨이퍼가 놓여지는 부분만을 도시하였다.FIG. 1 is a partial cross-sectional view of a disk 2 on which a wafer is seated in a general wafer holding device. In FIG. 1, eight wafers are usually placed on the disk 2 of the wafer holding device 1, but in this figure, one wafer is placed. Only the part to be placed is shown.
원형의 내부에 진공압 유동라인(2A)이 구성된 디스크(2)의 상부에는 디스크(2)의 중심부를 향하여 하향경사진 상태의 페데스탈(3; Pedestal)이 고정되어지면, 이 페데스탈(3) 표면에 웨이퍼(W)가 안착되어진다. 페데스탈(3)의 내부에는 디스크(2)의 진공압 유동라인(2A)과 연통된 진공압 공급라인(3A)이 구성되어 있으며, 각 진공압 공급라인(3A)의 일단은 외부로 노출되어 있다. 따라서, 페데스탈(3) 표면에 웨이퍼(W)가 안착될 경우 진공압은 웨이퍼(W)의 저면에 작용하게 된다. 또한 페데스탈(3)의 외주부에는 웨이퍼(W)를 고정시키기 위한 클램프(8)가 설치되어 있다.When the pedestal (3) inclined downward toward the center of the disc (2) is fixed to the upper part of the disk (2A) in which the vacuum pressure flow line (2A) is formed inside the circular surface, the surface of the pedestal (3) The wafer W is seated on the substrate. Inside the pedestal 3, a vacuum supply line 3A communicating with a vacuum flow line 2A of the disk 2 is configured, and one end of each vacuum supply line 3A is exposed to the outside. . Therefore, when the wafer W is seated on the surface of the pedestal 3, the vacuum pressure acts on the bottom surface of the wafer W. Moreover, the clamp 8 for fixing the wafer W is provided in the outer peripheral part of the pedestal 3.
한편, 디스크(2)의 외측부에는 구동부에 의하여 작동하는 프로부(4; Probe)가 설치되어 있으며, 프로브(4)의 내부에는 외부의 진공압 발생부(도시되지 않음)와 연통된 진공압 연결라인(4A)이 형성되어 있다. 따라서 프로브(4)가 이송되어 디스크(2)의 외주부와 접촉할 경우 프로브(4)의 진공압 연결라인(4A) 단부와 디스크(2)의 진공압 유동라인(2A)의 단부가 연통(連通)되어진다.On the other hand, the outer portion of the disk 2 is provided with a pro-be (4; Probe) that is operated by the drive unit, the inside of the probe 4 is connected to the vacuum pressure generating unit (not shown) in communication with the external vacuum pressure Line 4A is formed. Therefore, when the probe 4 is transported to contact the outer peripheral portion of the disk 2, the end of the vacuum connection line 4A of the probe 4 and the end of the vacuum flow line 2A of the disk 2 communicate with each other. Will be
이와 같은 웨이퍼 홀딩장치(1)의 작동과정을 살펴보면,Looking at the operation of such a wafer holding device (1),
전술한 웨이퍼 이송장치(1)에 의하여 페데스탈(3)상에 웨이퍼(W)가 안착되면 클램프(8)가 작동되어 웨이퍼(W)를 클램핑함과 동시에 프로브(4)가 이송되어 디스크(2)와 접촉되어진다. 이후, 외부의 진공압 발생부에서 발생된 진공압은 프로브(4) 내부의 진공압 연결라인(4A), 디스크(2) 내부의 진공압 유동라인(2A)을 통하여 페데스탈(3)의 진공압 공급라인(3A)으로 유입되며, 페데스탈(3)의 진공압 공급라인(3A)을 통하여 외부로 배출된 진공압은 웨이퍼(W) 저면에 작용하게 되어 결국 웨이퍼(W)는 클램프(8) 및 진공압으로 인하여 페데스탈(3) 표면에 견고하게 홀딩되어진다.When the wafer W is seated on the pedestal 3 by the wafer transfer device 1 described above, the clamp 8 is operated to clamp the wafer W and simultaneously the probe 4 is transferred to the disk 2. Contact with Subsequently, the vacuum pressure generated by the external vacuum pressure generating unit is the vacuum pressure of the pedestal 3 through the vacuum connection line 4A inside the probe 4 and the vacuum flow line 2A inside the disk 2. The vacuum pressure introduced into the supply line 3A and discharged to the outside through the vacuum pressure supply line 3A of the pedestal 3 acts on the bottom surface of the wafer W, so that the wafer W is clamped 8 and Due to the vacuum pressure it is firmly held on the surface of the pedestal (3).
한편, 프로브(3)에서 연장된 진공압 연결라인(3A)에는 진공압에 따라 작동하는 진공압 스위치(5)가 설치되어 있으며, 진공압 스위치(5)는 공정제어부(6)에 연결되어 있다. 진공압 스위치(5)는 프로브(4)의 진공압 연결라인(4A)에 작용하는 진공압의 압력이 설정된 압력보다 클 경우 그 압력에 의하여 내부접점이 붙게 되며, 진공압 스위치(5)가 작동함으로서 공정제어부(6)는 웨이퍼(W)의 정확한 홀딩이 이루어진 상태임을 간주하여 그 다음 공정으로 진행하게 된다.On the other hand, the vacuum connection line 3A extending from the probe 3 is provided with a vacuum pressure switch 5 that operates according to the vacuum pressure, and the vacuum pressure switch 5 is connected to the process control part 6. . When the pressure of the vacuum pressure acting on the vacuum connection line 4A of the probe 4 is greater than the set pressure, the vacuum switch 5 is attached to the internal contact by the pressure, and the vacuum pressure switch 5 is operated. By doing so, the process control unit 6 considers the state in which the correct holding of the wafer W is made and proceeds to the next process.
이상과 같은 웨이퍼 홀딩장치(1)에서 나타나는 문제점을 살펴보면,Looking at the problem appearing in the wafer holding device 1 as described above,
마모 또는 흠집으로 인한 페데스탈(3)의 표면의 불균일로 인하여 페데스탈(3)과 웨이퍼(W)간에 간극이 발생할 경우 적정압력 이상의 진공압이 공급되어도 상술한 진공압 스위치(5)가 작동되지 않아 다음 공정으로 진행될 수 없게 된다. 따라서 작업자가 페데스탈(3)상의 웨이퍼(W)위치를 수동으로 조정하게 되며 이로 인하여 웨이퍼(W)에 이물질이 묻게 되거나 심한 경우 웨이퍼(W) 표면에 손상이 발생되는 현상까지도 발생하게 된다.If a gap occurs between the pedestal 3 and the wafer W due to unevenness of the surface of the pedestal 3 due to abrasion or scratches, the above-described vacuum pressure switch 5 does not operate even if a vacuum pressure of an appropriate pressure is supplied. It will not be possible to proceed with the process. Therefore, the operator manually adjusts the position of the wafer (W) on the pedestal (3), which causes the foreign matter on the wafer (W) or even a phenomenon that damage to the surface of the wafer (W) occurs in severe cases.
진공압뿐만 아니라 기계적인 힘으로 작동되는 클램프(8)를 이용하여 웨이퍼(W)를 고정시키는 상술한 방법은 페데스탈(3)상에 웨이퍼(W)가 정확하게 놓여진 상태에서는 진공압이 설정된 압력이하로 공급될 경우에도 웨이퍼(W)의 홀딩에는 지장이 없으며 결국, 진공압 스위치(5)의 작동만을 위한 불필요한 웨이퍼의 위치조정을 인한 웨이퍼의 손상 및 작업공정지연이라는 문제점이 야기된다.The above-mentioned method of fixing the wafer W using the clamp 8 operated by mechanical force as well as the vacuum pressure is performed under the set pressure of the vacuum pressure in the state in which the wafer W is correctly placed on the pedestal 3. Even when supplied, the holding of the wafer W is not impaired, and as a result, problems such as wafer damage and work process delay due to unnecessary wafer positioning only for the operation of the vacuum pressure switch 5 are caused.
본 고안은 웨이퍼 홀딩장치에서 발생되는 상술한 문제점을 해결하기 위한 것으로서, 웨이퍼가 페데스탈상에 정확하게 놓여진 상태에서 진공압의 압력정도에 관계없이 다음 공정으로 진행할 수 있는 웨이퍼 홀딩장치를 제공하는데 그 목적이 있다.The object of the present invention is to solve the above-mentioned problems occurring in the wafer holding apparatus, and to provide a wafer holding apparatus that can proceed to the next process regardless of the degree of vacuum pressure while the wafer is accurately placed on the pedestal. have.
상술한 목적을 실현하기 위한 본 고안은 디스크와, 웨이퍼를 안착시키는 페데스탈과, 웨이퍼를 고정시키는 클램프와 디스크에 진공압을 공급하는 프로브와, 프로브의 진공압 연결라인에 설치된 진공압 스위치와 접속되어 공정진행을 제어하는 공정제어부로 이루어진 웨이퍼 홀딩장치에서 프로브의 진공압 연결라인에 설치된 진공압 스위치와 공정제어부를 접속하는 라인에 보조스위치를 병렬로 연결하여 보조스위치의 작동시 진공압 스위치가 작동되지 않은 상태에서도 공정제어부가 다음 공정으로의 진행을 실시할 수 있도록 구성한 것을 그 특징으로 한다.The present invention for realizing the above object is connected with a disk, a pedestal for seating a wafer, a clamp for fixing a wafer, a probe for supplying a vacuum pressure to the disk, and a vacuum pressure switch provided in a vacuum connection line of the probe. In the wafer holding device which consists of the process control part which controls the process progress, the vacuum switch is not operated when the auxiliary switch is operated by connecting the auxiliary switch in parallel to the line connecting the vacuum control switch installed in the vacuum connection line of the probe and the process control part. It is characterized in that the process control unit is configured so that the process can proceed to the next process even when it is not.
이하, 본 고안을 첨부한 도면을 참고하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings of the present invention will be described in detail.
제2도는 본 고안의 요지를 도시한 프로브의 부분 단면도로서, 제1도에 도시된 부재와 동일부재에는 동일부호를 부여하여 중복설명은 생략한다.2 is a partial cross-sectional view of the probe showing the gist of the present invention, the same reference numerals are given to the same members as those shown in FIG.
본 고안에 이용된 디스크, 페데스탈 및 클램프의 구성은 제1도 및 그에 따른 설명에서 언급한 바와 동일하므로 이에 대한 설명은 생략하며, 본 고안에 대한 설명은 제1도 및 제2도를 통하여 설명한다.Since the configuration of the disk, pedestal and clamp used in the present invention is the same as mentioned in FIG. 1 and the description thereof, a description thereof will be omitted, and the description of the present invention will be described with reference to FIGS. 1 and 2. .
본 고안의 가장 큰 특성은 프로브(4)의 진공압 연결라인(4A)에 설치된 진공압 스위치(5)와 공정제어부(6)를 전기적으로 연결하는 라인에 별도의 보조스위치(7)를 병렬로 연결한 것이다.The greatest feature of the present invention is that the auxiliary switch 7 is connected in parallel to the line electrically connecting the vacuum switch 5 installed in the vacuum connection line 4A of the probe 4 and the process control part 6. It is connected.
상술한 바와 같이, 프로브(4)로 유입되는 진공압 연결라인(4A) 내부에는 진공압의 공급을 제어하는 진공압 스위치(5)가 설치되어 있으며, 진공압 스위치(5)는 진공압 연결라인(4A)에 작용하는 진공압의 압력이 설정된 압력보다 클 경우 그 압력에 의하여 내부접점이 붙게 된다. 접점이 붙게 되면 공정진행을 제어하는 공정제어부(6)가 작동하여 다음 공정으로 진행하게 된다.As described above, a vacuum pressure switch 5 for controlling the supply of vacuum pressure is installed inside the vacuum pressure connection line 4A flowing into the probe 4, and the vacuum pressure switch 5 is a vacuum pressure connection line. If the pressure of the vacuum pressure acting on (4A) is greater than the set pressure, the internal contact is caused by the pressure. When the contact is attached, the process control unit 6 for controlling the process progress is operated to proceed to the next process.
페데스탈(3)상에 웨이퍼(W)가 정확하게 놓여진 상태일지라도 진공압이 설정된 압력이하로 공급될 경우에는 진공압 스위치(5)가 작동되지 않아 공정제어부(6)가 다음 공정으로 진행시킬 수 없게 되나, 본 고안에서는 작업자가 보조스위치(7)를 작동시킬 경우 진공압 스위치(5)가 작동되지 않은 상태에서도 공정제어부(6)는 보조스위치(7)의 작동을 진공압 스위치(5)의 작동으로 간주하여 다음 공정으로의 진행을 명령하게 된다.Even if the wafer W is correctly placed on the pedestal 3, when the vacuum pressure is supplied below the set pressure, the vacuum pressure switch 5 does not operate so that the process control unit 6 cannot proceed to the next process. In the present invention, when the operator operates the auxiliary switch 7, the process control unit 6 controls the operation of the auxiliary switch 7 by the operation of the vacuum pressure switch 5 even when the vacuum pressure switch 5 is not operated. It will be ordered to proceed to the next process.
진공압이 설정된 압력이하로 공급되어도 클램프(8)가 웨이퍼(W)를 견고하게 지지하는 상태이므로 다음 공정으로의 진행시 웨이퍼(W)의 이탈현상은 방지할 수 있으며, 따라서 작업자는 보조스위치(7)를 작동시키기 전에 웨이퍼(W)가 페데스탈(3)상에 정확하게 안착되어 있는지만을 점검한 후 보조스위치를 작동시키게 된다.Even if the vacuum pressure is supplied below the set pressure, the clamp 8 firmly supports the wafer W, so that the phenomenon of the wafer W can be prevented from being moved to the next process. Before operating 7), only check whether the wafer W is correctly seated on the pedestal 3, and then operate the auxiliary switch.
이상과 같은 본 고안은 진공압뿐만 아니라 기계적인 힘으로 작동되는 클램프를 이용하여 웨이퍼를 고정시킨다는 점을 감안하여 웨이퍼가 페데스탈에 정확하게 놓여진 상태에서 진공압 스위치와 공정제어부를 전기적으로 연결하는 라인에 접속된 별도의 보조스위치를 작동시킴으로서 진공압 스위치가 작동되지 않은 상태에서도 공정제어부가 보조스위치의 작동을 진공압 스위치의 작동으로 간주하여 다음 공정의 진행을 실시하게 되므로 웨이퍼의 불필요한 조절작업이 필요없게 되며, 공정시간이 지연됨을 방지할 수 있는 효과를 얻을 수 있다.In view of the fact that the present invention as described above fixes the wafer by using a clamp operated by mechanical force as well as vacuum pressure, the wafer is connected to a line electrically connecting the vacuum pressure switch and the process control unit while the wafer is correctly placed on the pedestal. By operating the separate auxiliary switch, the process control part regards the operation of the auxiliary switch as the operation of the vacuum pressure switch even when the vacuum pressure switch is not operated, and proceeds to the next process, thus eliminating unnecessary adjustment of the wafer. In addition, it is possible to obtain an effect of preventing the process time delay.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940037361U KR0118691Y1 (en) | 1994-12-29 | 1994-12-29 | Wafer holding apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940037361U KR0118691Y1 (en) | 1994-12-29 | 1994-12-29 | Wafer holding apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960025432U KR960025432U (en) | 1996-07-22 |
| KR0118691Y1 true KR0118691Y1 (en) | 1998-08-01 |
Family
ID=19403912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940037361U KR0118691Y1 (en) | 1994-12-29 | 1994-12-29 | Wafer holding apparatus |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0118691Y1 (en) |
-
1994
- 1994-12-29 KR KR2019940037361U patent/KR0118691Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR960025432U (en) | 1996-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH04250648A (en) | Wafer holder | |
| KR0118691Y1 (en) | Wafer holding apparatus | |
| US20030107866A1 (en) | Electrostatic chuck of an ion implanter | |
| KR20030028985A (en) | Wafer chuck of semiconductor device manufacturing apparatus | |
| JP4088401B2 (en) | Wafer cassette device | |
| KR20030097286A (en) | A wafer transfer apparatus | |
| KR100741028B1 (en) | A structure of spin chuck for a process of manufacturing semiconductor device | |
| KR100558473B1 (en) | a apparatus of safe arrival for wafer | |
| KR200167584Y1 (en) | Wafer transfer chuck | |
| KR20040102632A (en) | Dry etching equipment | |
| JP2008177562A (en) | Wafer cassette device | |
| KR200143983Y1 (en) | Vacuum pad structure used in transporting wafer of alignment apparatus | |
| KR200297907Y1 (en) | Electrostatic chuck of a plasma etcher | |
| KR200187938Y1 (en) | Zig for installing clamp ring of camical vapor deposition | |
| JP2005057086A (en) | Device and method for loading semiconductor wafer | |
| JP2894273B2 (en) | Ion implanter | |
| KR200280908Y1 (en) | Wafer Chucks for Steppers | |
| KR20050034877A (en) | Apparatus for loading semiconductor wafer to chemical mechanical polishing apparatus | |
| KR20050045300A (en) | Wafer guide pin and wafer holder having the same | |
| KR200171679Y1 (en) | Semiconductor wafer chuck | |
| KR20030016903A (en) | Wafer stage for exposure equipment | |
| KR200374866Y1 (en) | Assembly of platen for clamping a wafer | |
| KR19980036861U (en) | Wafer fixing device for semiconductor device exposure equipment | |
| KR19980061959U (en) | Process Chamber for Semiconductor Manufacturing Equipment | |
| KR0127357Y1 (en) | Wafer aligning device for taping apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| REGI | Registration of establishment | ||
| FPAY | Annual fee payment |
Payment date: 20090223 Year of fee payment: 12 |
|
| EXPY | Expiration of term |