KR200171679Y1 - Semiconductor wafer chuck - Google Patents
Semiconductor wafer chuck Download PDFInfo
- Publication number
- KR200171679Y1 KR200171679Y1 KR2019990013739U KR19990013739U KR200171679Y1 KR 200171679 Y1 KR200171679 Y1 KR 200171679Y1 KR 2019990013739 U KR2019990013739 U KR 2019990013739U KR 19990013739 U KR19990013739 U KR 19990013739U KR 200171679 Y1 KR200171679 Y1 KR 200171679Y1
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- South Korea
- Prior art keywords
- wafer
- clamp ring
- semiconductor wafer
- platen
- clampers
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
본 고안의 반도체 웨이퍼 척은 웨이퍼(11)가 얹혀지는 플래튼(12)의 외측에 승강가능도록 클램프 링(13)을 설치하고, 이온주입시 클램프 링(13)의 클램퍼(15)들이 웨이퍼(11)의 측면을 지지하는 상태에서 이온주입작업이 이루어지도록 함으로서, 클램퍼들에 의하여 웨이퍼에 이온미주입부들이 발생되는 것이 방지되고, 클램프 링이 웨이퍼의 측면에서 동작되므로 클램프 링에 의한 웨이퍼의 이물발생을 방지할 수 있다.In the semiconductor wafer chuck of the present invention, the clamp ring 13 is installed to be liftable on the outer side of the platen 12 on which the wafer 11 is placed, and the clampers 15 of the clamp ring 13 are implanted during ion implantation. By performing ion implantation in the state of supporting the side of 11), the ion implants are prevented from being generated on the wafer by the clampers, and the clamp ring is operated at the side of the wafer, so that the foreign matter of the wafer by the clamp ring It can prevent occurrence.
Description
본 고안은 반도체 웨이퍼 척에 관한 것으로, 특히 웨이퍼에 클램핑 자국을 남기지 않도록 하는데 적합한 반도체 웨이퍼 척에 관한 것이다.The present invention relates to a semiconductor wafer chuck, and more particularly, to a semiconductor wafer chuck suitable for leaving no clamping marks on the wafer.
반도체 웨이퍼 제조장비에서 웨이퍼를 고정시키기 위하여 사용되는 웨이퍼 척이 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.A wafer chuck used to fix a wafer in a semiconductor wafer manufacturing apparatus is shown in FIG. 1, which will be briefly described as follows.
도시된 바와 같이, 종래 반도체 웨이퍼 척은 웨이퍼(1)를 얹어 놓기 위한 플래튼(2)과, 그 플래튼(2)에 얹혀지는 웨이퍼(1)를 고정시키기 위한 클램프 링(3)으로 구성되어 있다.As shown, the conventional semiconductor wafer chuck is composed of a platen 2 for mounting the wafer 1 and a clamp ring 3 for fixing the wafer 1 mounted on the platen 2. have.
상기 클램프 링(3)은 원형 링형상의 링 바디(4)와, 그 링 바디(4)의 내주면에 일정간격을 두고 돌출형성되어 있는 수개의 클램퍼(5)로 구성되어 있다.The clamp ring 3 is composed of a ring body 4 having a circular ring shape and several clampers 5 protruding at regular intervals on the inner circumferential surface of the ring body 4.
상기와 같은 웨이퍼 척(6)에서 웨이퍼(1)가 클램핑되는 순서는 다음과 같다.The wafer 1 is clamped in the wafer chuck 6 as described above.
먼저, 플래튼(2)의 상면에 웨이퍼(1)를 얹어 놓고 클램프 링(3)을 상측에서 하측으로 이동하여 웨이퍼(1)를 플래튼(2)의 상면에 고정시키게 되는데, 이때 웨이퍼(1)의 상면 가장자리는 상기 클램프 링(3)의 클램퍼(5)들에 의하여 지지되는 상태가 되고, 이와 같은 상태에서 이온주입작업이 진행된다.First, the wafer 1 is placed on the upper surface of the platen 2 and the clamp ring 3 is moved from the upper side to the lower side to fix the wafer 1 to the upper surface of the platen 2, wherein the wafer 1 The upper edge of the c) is supported by the clampers 5 of the clamp ring 3, and ion implantation is performed in this state.
그러나, 상기와 같은 종래 반도체 웨이퍼 척(6)에서 웨이퍼(1)의 이온주입작업시 클램프 링(3)의 클램퍼(5)들에 의하여 이온주입이 차단되어 도 2에서와 같이 클램퍼(5)들에 의하여 지지된 웨이퍼(1)의 상면 일정부분에 이온미주입부(7)들이 발생되고, 이는 웨이퍼(1)의 사용면적에 대한 효율을 저하시키는 요인이 되는 문제점이 있었다.However, in the conventional semiconductor wafer chuck 6 as described above, the ion implantation is blocked by the clampers 5 of the clamp ring 3 during the ion implantation operation of the wafer 1, so that the clampers 5 as shown in FIG. The ion non-implanted portions 7 are generated at a predetermined portion of the upper surface of the wafer 1 supported by the wafer 1, which causes a problem of lowering the efficiency of the use area of the wafer 1.
또한, 웨이퍼(1)를 클램핑 하기 위하여 상부에 이동하는 클램프 링(3)에서 웨이퍼(1)에 이물질을 발생시키는 문제점이 있었다.In addition, there is a problem that foreign matters are generated in the wafer 1 in the clamp ring 3 moving to the upper part in order to clamp the wafer 1.
상기와 같은 문제점을 감안하여 안출한 본 고안의 목적은 웨이퍼의 이온주입작업시 클램프 링의 클램퍼들에 의해 차단되어 이온미주입부들이 발생되는 것을 방지하도록 함과 아울러 웨이퍼에 이물질이 발생되는 것을 방지하도록 하는데 적합한 반도체 웨이퍼 척을 제공함에 있다.The object of the present invention devised in view of the above problems is to prevent the occurrence of foreign matters on the wafer as well as to prevent the non-ion implantation portion is generated by being blocked by the clampers of the clamp ring during the ion implantation operation of the wafer To provide a semiconductor wafer chuck suitable for.
도 1은 종래 웨이퍼 척의 구성을 보인 분해사시도.1 is an exploded perspective view showing the configuration of a conventional wafer chuck.
도 2는 종래에 이온주입후의 웨이퍼를 보인 평면도.2 is a plan view showing a wafer after ion implantation in the prior art.
도 3은 본 고안 반도체 웨이퍼 척에 클램프 링이 설치된 상태를 보인 사시도.3 is a perspective view showing a state in which a clamp ring is installed on the inventive semiconductor wafer chuck.
도 4는 본 고안의 요부인 클램프 링의 구성을 보인 사시도.Figure 4 is a perspective view showing the configuration of the clamp ring which is the main part of the present invention.
도 5a, 5b는 본 고안 반도체 웨이퍼 척에 웨이퍼를 장착하는 순서를 보인 사시도.5A and 5B are perspective views showing a procedure of mounting a wafer on the inventive semiconductor wafer chuck.
도 6은 본 발명에 따른 클램프 링의 클램퍼에 실리콘 코팅된 상태를 보인 단면도.Figure 6 is a cross-sectional view showing a state in which the silicone coating on the clamper of the clamp ring according to the present invention.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
11 : 웨이퍼 12 : 플래튼11: wafer 12: platen
13 : 클램프 링 14 : 링 바디13: clamp ring 14: ring body
15 : 클램퍼 17 : 실리콘15: clamper 17: silicon
상기와 같은 본 고안의 목적을 달성하기 위하여 웨이퍼가 얹혀지는 플래튼과, 그 플래튼의 상부에서 웨이퍼를 고정시키기 위한 클램프 링으로 구성되는 반도체 웨이퍼 척에 있어서, 상기 클램프 링은 원형의 링 바디와, 그 링 바디의 외주면 상측에 일정간격을 두고 설치되는 수개의 클램퍼로 구성되는 것을 특징으로 하는 반도체 웨이퍼 척이 제공된다.In the semiconductor wafer chuck composed of a platen on which the wafer is placed, and a clamp ring for fixing the wafer on top of the platen, to achieve the object of the present invention, the clamp ring is a circular ring body and A semiconductor wafer chuck is provided, comprising a plurality of clampers which are provided at a predetermined interval above the outer circumferential surface of the ring body.
이하, 상기와 같이 구성되는 본 고안 반도체 웨이퍼 척을 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, the present invention semiconductor wafer chuck configured as described above will be described in more detail with reference to embodiments of the accompanying drawings.
도 3은 본 고안 반도체 웨이퍼 척에 클램프 링이 설치된 상태를 보인 사시도이고, 도 4는 본 고안의 요부인 클램프 링의 구성을 보인 사시도로서, 도시된 바와 같이, 본 고안의 웨이퍼 척은 웨이퍼(11)가 얹혀지는 플래튼(12)고, 그 플래튼(12)의 외측을 감싸도록 설치되며 플래튼(12)에 얹혀지는 웨이퍼(11)를 고정시키기 위한 클램프 링(13)으로 구성되어 있다.3 is a perspective view showing a state in which a clamp ring is installed on a semiconductor wafer chuck of the present invention, and FIG. 4 is a perspective view showing a configuration of a clamp ring, which is a main part of the present invention. ) Is mounted on the platen 12, and is configured to surround the outside of the platen 12, and is composed of a clamp ring 13 for fixing the wafer 11 mounted on the platen 12.
상기 클램프 링(13)은 원형의 링 바디(14)와, 그 링 바디(14)의 외주면 상측에 일정간격을 두고 상방향으로 돌출형성됨과 아울러 등간격으로 형성되어 있는 3개의 클램퍼(15)들로 구성되어 있다.The clamp ring 13 has a circular ring body 14 and three clampers 15 protruding upward at a predetermined interval above the outer circumferential surface of the ring body 14 and formed at equal intervals. Consists of
그리고, 상기 클램퍼(15)들은 도 6에서와 같이 실리콘(17)으로 코팅하여 웨이퍼(11)의 측면에 이물질이 부착되는 것을 차단하는 것이 바람직하다.In addition, the clampers 15 may be coated with silicon 17 to block foreign matter from adhering to the side of the wafer 11 as shown in FIG. 6.
상기와 같이 구성되어 있는 본 고안의 웨이퍼 척(16)에서 이온주입작업이 진행되는 동작을 설명하면 다음과 같다.Referring to the operation of the ion implantation operation in the wafer chuck 16 of the present invention is configured as described above are as follows.
도 5a에 도시된 바와 같이, 클램프 링(13)이 통상적인 모터 및 리드스크류와 같은 승강수단에 의하여 플래튼(12)에서 하측으로 일정높이 하강된 상태에서 플래튼(12)의 상면에 이온주입하고자 하는 웨이퍼(11)를 얹어 놓는다.As shown in FIG. 5A, ion implantation is performed on the upper surface of the platen 12 in a state where the clamp ring 13 is lowered downwardly from the platen 12 by lifting means such as a conventional motor and a lead screw. The wafer 11 to be placed is placed.
그런 다음, 도 5b에서와 같이 승강수단을 이용하여 클램프 링(13)을 상측으로 상승시켜서 웨이퍼(11)의 측면을 클램프 링(13)의 클램퍼(15)들이 지지하는 상태에서 이온주입작업을 실시하게 되는데, 이와 같은 상태에서는 클램퍼(15)들이 웨이퍼(11)의 측면을 지지하고 있는 상태이기 때문에 종래와 같이 이온미주입부가 발생되지 않게 된다.Thereafter, as shown in FIG. 5B, the clamp ring 13 is raised upward by using the lifting means, and ion implantation is performed while the clampers 15 of the clamp ring 13 support the side of the wafer 11. In this state, since the clampers 15 support the side surface of the wafer 11, the ion implantation unit is not generated as in the prior art.
이상에서 상세히 설명한 바와 같이, 본 고안 반도체 웨이퍼 척은 웨이퍼를 얹어 놓기 위한 플래튼과, 그 플래튼을 감싸도록 승강가능하게 설치되며 원형의 링 바디 상면에 일정간격으로 수개의 클램퍼들이 설치되어 있는 클램프 링으로 구성되어, 이온주입작업시 클램퍼들이 웨이퍼의 측면을 지지하도록 하여 이온미주입부의 발생을 방지하는데 따른 웨이퍼의 사용면적에 대한 효율을 향상시키는 효과가 있고, 클램프 링이 웨이퍼의 측면에서 승강하므로 클램프 링에서 발생되는 이물질에 의한 웨이퍼의 오염을 방지하는 효과가 있다.As described in detail above, the inventive semiconductor wafer chuck is a platen for placing a wafer, and a clamp that is installed to be liftable to surround the platen and has a plurality of clampers installed at regular intervals on the upper surface of a circular ring body. It is composed of a ring, so that the clampers support the side of the wafer during the ion implantation operation, thereby improving the efficiency of the use area of the wafer to prevent the occurrence of ion implantation, and the clamp ring is lifted from the side of the wafer. There is an effect of preventing contamination of the wafer by foreign matter generated in the clamp ring.
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Priority Applications (1)
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KR2019990013739U KR200171679Y1 (en) | 1999-07-13 | 1999-07-13 | Semiconductor wafer chuck |
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KR2019990013739U KR200171679Y1 (en) | 1999-07-13 | 1999-07-13 | Semiconductor wafer chuck |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100741028B1 (en) * | 2001-08-08 | 2007-07-19 | 씨앤지하이테크 주식회사 | A structure of spin chuck for a process of manufacturing semiconductor device |
-
1999
- 1999-07-13 KR KR2019990013739U patent/KR200171679Y1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100741028B1 (en) * | 2001-08-08 | 2007-07-19 | 씨앤지하이테크 주식회사 | A structure of spin chuck for a process of manufacturing semiconductor device |
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