JP2008205407A - Method for discharging remaining static electricity of electrostatic chuck, and electrostic chuck - Google Patents

Method for discharging remaining static electricity of electrostatic chuck, and electrostic chuck Download PDF

Info

Publication number
JP2008205407A
JP2008205407A JP2007042972A JP2007042972A JP2008205407A JP 2008205407 A JP2008205407 A JP 2008205407A JP 2007042972 A JP2007042972 A JP 2007042972A JP 2007042972 A JP2007042972 A JP 2007042972A JP 2008205407 A JP2008205407 A JP 2008205407A
Authority
JP
Japan
Prior art keywords
substrate
static electricity
electrostatic chuck
base
circle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007042972A
Other languages
Japanese (ja)
Inventor
Nobuyuki Tanaka
信幸 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2007042972A priority Critical patent/JP2008205407A/en
Publication of JP2008205407A publication Critical patent/JP2008205407A/en
Withdrawn legal-status Critical Current

Links

Images

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To definitely discharge static electricity left in a wafer before lifting up the wafer from a block of an electrostatic chuck with a lift pin. <P>SOLUTION: The system is provided with the block 2 that attracts and holds a substrate 1 with static electricity, a lift pin 3 that lifts the substrate 1 after attraction and holding are released from a lower side and removes the same from the block, and a remaining static electricity discharging mechanism (ring 4 and pin 5) that continuously floats one portion of the substrate 1 along a circle with the center of a substrate surface as a center from the block 2. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、静電チャックの残存静電気除去方法、およびこれらの方法が実施可能な静電チャックに関する。   The present invention relates to a method for removing residual static electricity from an electrostatic chuck, and an electrostatic chuck capable of performing these methods.

従来より、半導体装置の製造工程で使用する反応性イオンエッチング装置等でウエハを保持する装置として、静電チャックが使用されている。静電チャックは、静電気で基板(ウエハ)を吸着保持する台と、吸着保持解除後に基板を下側から持ち上げて台から外すリフトピンと、を備えている。通常は、アースされたリフトピンが基板に接触することで、基板の裏面に存在する静電気が除去される。あるいは、逆電位をかけることで静電気を除去する方法も採用されている。   Conventionally, an electrostatic chuck has been used as an apparatus for holding a wafer in a reactive ion etching apparatus or the like used in a semiconductor device manufacturing process. The electrostatic chuck includes a table that holds the substrate (wafer) by static electricity, and lift pins that lift the substrate from the lower side and release it from the table after the suction holding is released. Usually, static electricity present on the back surface of the substrate is removed by the grounded lift pins coming into contact with the substrate. Alternatively, a method of removing static electricity by applying a reverse potential is also employed.

しかし、ウエハの裏面の汚れ具合や表面の状態などによって、静電気量が面内で不均一となっていることと、リフトピンは通常、ウエハ面内の周縁部ではなく中央部分に配置されていることから、前述のような静電気除去処理を行っても、面内の一部(特に周縁部)に静電気が残存することが多い。そして、静電気が残存した状態のウエハをリフトピンで下側から持ち上げると、広範囲に静電気が残存している場合にはウエハが跳ねる恐れがある。また、周縁部の一部に残存している場合には、その部分が台から離れないため、ウエハを搬送するアームがウエハに接触したり、アームが正常にウエハを保持できずにウエハに位置ずれを生じさせたりする恐れがある。   However, the amount of static electricity is not uniform in the surface due to the degree of contamination on the back surface of the wafer, the surface condition, etc., and the lift pins are usually placed at the center of the wafer instead of the peripheral edge. Therefore, even if the static electricity removing process as described above is performed, static electricity often remains in a part of the surface (especially the peripheral edge). When a wafer with static electricity remaining is lifted from below with lift pins, the wafer may jump if static electricity remains in a wide range. Also, if it remains on a part of the peripheral part, the part does not move away from the table, so the arm that transports the wafer contacts the wafer, or the arm cannot properly hold the wafer and is positioned on the wafer. There is a risk of causing a shift.

下記の特許文献1には、このような問題点を解決するために、リフトピンより外側のウエハ周縁部となる位置に複数の離脱用ピンを設けることが記載されている。
この文献に記載されたウエハの離脱方法は、同一円周上に等間隔で例えば4本の離脱用ピンを設けて、ウエハの径方向で対向する2本の離脱用ピンを0.1mm程度上昇させた後に、他の2本の離脱用ピンを0.1mm程度上昇させ、さらに最初の2本の離脱用ピンを0.1mm上昇させることを繰り返して、最終的に0.5mm(ウエハの弾性変形許容範囲内の寸法)上昇させることである。これにより、電荷が残留している場合でも確実にウエハを台から外すことができると記載されている。
In Patent Document 1 below, in order to solve such a problem, it is described that a plurality of detachment pins are provided at positions on the wafer peripheral portion outside the lift pins.
In the wafer detachment method described in this document, for example, four detachment pins are provided at equal intervals on the same circumference, and the two detachment pins facing in the radial direction of the wafer are raised by about 0.1 mm. After that, the other two release pins are raised by about 0.1 mm, and the first two release pins are further raised by 0.1 mm. The dimension within the allowable deformation range). Thus, it is described that the wafer can be reliably removed from the table even when the electric charge remains.

また、離脱用ピンに、ウエハと接触してその接触圧力を検出する圧力センサを設けることで、このセンサが検出した圧力値から、ウエハが台から離脱したかどうかを確認することができると記載されている。
特開平11−243137号公報
In addition, it is described that by providing a pressure sensor that contacts the wafer and detects the contact pressure on the detachment pin, it is possible to confirm whether the wafer is detached from the table from the pressure value detected by the sensor. Has been.
Japanese Patent Laid-Open No. 11-243137

本発明の課題は、特許文献1の方法とは異なる方法で、静電チャックの台からウエハをリフトピンで持ち上げる前に、ウエハに残存している静電気を確実に除去できるようにすることである。   An object of the present invention is to make it possible to reliably remove static electricity remaining on a wafer before the wafer is lifted from a stage of an electrostatic chuck by lift pins by a method different from the method of Patent Document 1.

上記課題を解決するための発明1は、静電気で基板を吸着保持する台と、吸着保持解除後の基板を下側から持ち上げて台から外すリフトピンを備えた静電チャックで、吸着保持解除後に前記台上の基板に残存する静電気を除去する方法であって、前記基板の一カ所を前記台から浮き上がらせることを、基板面の中心点を中心とした円に沿って一周以上連続的に行うことを特徴とする静電チャックの残存静電気除去方法である。   Invention 1 for solving the above-mentioned problem is an electrostatic chuck comprising a table for attracting and holding a substrate by static electricity and a lift pin for lifting the substrate after the suction and holding release from the lower side and removing it from the table. A method of removing static electricity remaining on a substrate on a table, wherein one part of the substrate is lifted from the table by continuously performing one or more rounds along a circle centering on the center point of the substrate surface This is a method for removing residual static electricity from an electrostatic chuck.

発明1の方法によれば、基板の一カ所を台から浮き上がらせることから、基板には台に接触している部分が常に存在するため、静電気が基板に広範囲に残存している場合でも、基板が跳ねたり、位置ずれが生じたりしない。また、基板の一カ所を台から浮き上がらせることを、前記円に沿って一周以上連続的に行うため、基板に残存している静電気を円周方向全体に亙って確実に除去できる。   According to the method of the first aspect of the present invention, since one portion of the substrate is lifted from the base, there is always a portion in contact with the base, so that even if static electricity remains in a wide range on the substrate, the substrate Will not bounce or misalign. In addition, since one part of the substrate is lifted from the table continuously for one or more rounds along the circle, static electricity remaining on the substrate can be reliably removed over the entire circumferential direction.

発明2は、静電気で基板を吸着保持する台と、吸着保持解除後の基板を下側から持ち上げて台から外すリフトピンと、前記基板の一カ所を、基板面の中心点を中心とした円に沿って連続的に前記台から浮き上がらせる残存静電気除去機構と、を備えたことを特徴とする静電チャックである。
発明3は、発明2の前記残存静電気除去機構が、前記台の上面の基板の周縁部が配置される位置に設けた円周溝と、この円周溝の円に沿って配置した基板昇降部材と、この基板昇降部材を前記円に沿って連続的に上昇させる駆動装置と、からなる静電チャックである。
A second aspect of the present invention provides a base for attracting and holding the substrate by static electricity, a lift pin for lifting the substrate after the suction and holding release from the lower side and removing it from the base, and a portion of the substrate in a circle centered on the center point of the substrate surface An electrostatic chuck comprising: a residual static electricity removing mechanism that continuously floats along the base.
In the invention 3, the residual static electricity removing mechanism of the invention 2 is provided with a circumferential groove provided at a position where the peripheral portion of the substrate on the upper surface of the table is disposed, and a substrate lifting member disposed along a circle of the circumferential groove. And a driving device for continuously raising the substrate elevating member along the circle.

発明4は、発明3の基板昇降部材が前記円周溝に入るリングである静電チャックである。
発明2〜4の静電チャックによれば、基板の一カ所を前記台から浮き上がらせることを、基板面の中心点を中心とした円に沿って一周以上連続的に行うことができるため、発明1および2の方法が容易に実施できる。
A fourth aspect of the present invention is an electrostatic chuck in which the substrate elevating member of the third aspect is a ring that enters the circumferential groove.
According to the electrostatic chucks of the inventions 2 to 4, since one place of the substrate can be lifted from the table, it can be continuously performed one or more times along a circle centering on the center point of the substrate surface. The methods 1 and 2 can be easily performed.

以下、本発明の実施形態について説明する。
図1は、この実施形態の静電チャックを示す平面図(a)と断面図(b)である。
図1(b)は、図1(a)のA−A、B−B、C−C、D−Dの各断面に対応する図である。
この静電チャックは、静電気で円形の基板1を吸着保持する台2と、吸着保持解除後の基板1を下側から持ち上げて台から外すリフトピン3を備えている。この台2には、リフトピン3を通す貫通穴21が設けてある。また、台2の上面には、基板1の周縁部が配置される位置に円周溝22が設けてある。この円周溝22は、例えば、基板1の外周から1cm内側となる位置に配置することが好ましい。
Hereinafter, embodiments of the present invention will be described.
FIG. 1 is a plan view (a) and a cross-sectional view (b) showing the electrostatic chuck of this embodiment.
FIG.1 (b) is a figure corresponding to each cross section of AA of FIG.1 (a), BB, CC, DD.
This electrostatic chuck includes a base 2 for attracting and holding the circular substrate 1 by static electricity, and lift pins 3 for lifting the substrate 1 after the suction and holding release from the lower side and removing it from the base. The base 2 is provided with a through hole 21 through which the lift pin 3 passes. A circumferential groove 22 is provided on the upper surface of the table 2 at a position where the peripheral edge of the substrate 1 is disposed. The circumferential groove 22 is preferably arranged, for example, at a position 1 cm inside from the outer periphery of the substrate 1.

そして、この円周溝22の円に沿って等間隔に8個の貫通穴23が設けてある。各貫通穴23は円周溝22の底面を貫通している。円周溝22には、丸棒を環状に曲げて結合したリング(基板昇降部材)4が配置されている。各貫通穴23には、リング4を円周溝22の円に沿った8カ所で昇降させるピン5が配置されている。
各ピン5は、図示されない昇降機構にそれぞれ接続され、各昇降機構に接続された制御装置により、円周溝22の円に沿って8本のピン5が順次、所定量上昇した後に下降するように構成されている。これらのピン5、昇降機構、制御装置が、本発明の駆動装置を構成する。また、この駆動装置と、円周溝22と、リング4が、本発明の残存静電気除去機構を構成する。
Eight through holes 23 are provided at equal intervals along the circle of the circumferential groove 22. Each through hole 23 passes through the bottom surface of the circumferential groove 22. In the circumferential groove 22, a ring (substrate elevating member) 4 in which round bars are bent and joined in an annular shape is arranged. In each through hole 23, pins 5 that raise and lower the ring 4 at eight locations along the circle of the circumferential groove 22 are arranged.
Each pin 5 is connected to an elevating mechanism (not shown), and the control device connected to each elevating mechanism causes the eight pins 5 to sequentially descend along a circle of the circumferential groove 22 and then descend. It is configured. These pins 5, the lifting mechanism and the control device constitute the drive device of the present invention. In addition, the drive device, the circumferential groove 22 and the ring 4 constitute the residual static electricity removing mechanism of the present invention.

この静電チャックは、例えば、反応性イオンエッチング装置のチャンバ内に設置されて使用される。この場合、台2の上にウエハ(基板)1を静電気で吸着保持し、チャンバ内を密閉した状態で反応性イオンエッチングを行った後に、チャンバの蓋を開ける。そして、ウエハ1を台2の上から外す際に、制御装置で昇降機構を制御することにより、円周溝22の円に沿って8本のピン5が順次、所定量上昇した後に下降する。   For example, the electrostatic chuck is used by being installed in a chamber of a reactive ion etching apparatus. In this case, the wafer (substrate) 1 is adsorbed and held on the table 2 by static electricity, and reactive ion etching is performed in a state where the chamber is sealed, and then the lid of the chamber is opened. Then, when removing the wafer 1 from the table 2, the control device controls the lifting mechanism so that the eight pins 5 are sequentially raised by a predetermined amount along the circle of the circumferential groove 22 and then lowered.

これに伴って、図2に示すように、リング4は、上昇しているピン5の上側にある部分が台2より上に出て、その上に存在する基板1の一部分に接触する。この接触により、基板1は、リング4からの押し上げ力が作用する範囲で、弾性変形して台2から浮き上がった状態となり、この範囲外の部分は台2に接触したままの状態となる。
例えば、先ず、図1(a)のA−A断面をこの状態とした場合、次に、A−A断面に存在するピン5を下降させると同時に、B−B断面に存在するピン5を上昇させて図2の状態とする。次に、B−B断面に存在するピン5を下降させると同時に、C−C断面に存在するピン5を上昇させて図2の状態とする。次に、C−C断面に存在するピン5を下降させると同時に、D−D断面に存在するピン5を上昇させて図2の状態とする。
Accordingly, as shown in FIG. 2, the ring 4 has a portion on the upper side of the rising pin 5 protruding above the table 2 and comes into contact with a part of the substrate 1 existing thereon. As a result of this contact, the substrate 1 is elastically deformed and lifted from the table 2 within a range in which the pushing force from the ring 4 acts, and a portion outside this range remains in contact with the table 2.
For example, first, when the AA cross section of FIG. 1A is in this state, the pin 5 existing in the AA cross section is lowered, and at the same time, the pin 5 existing in the BB cross section is raised. Let the state shown in FIG. Next, the pin 5 present in the BB cross section is lowered, and at the same time, the pin 5 present in the CC cross section is raised to the state shown in FIG. Next, the pin 5 existing in the CC cross section is lowered, and at the same time, the pin 5 existing in the DD cross section is raised to the state shown in FIG.

これにより、基板1の一カ所を台2から浮き上がらせることが、円周溝22の円(基板面の中心点を中心とした円)に沿って一周、連続的に行われる。この操作を、図1のように、アースされたリフトピン3が基板1に接触している状態とした後に行うことにより、基板1に残存している静電気が円周方向全体に亙って確実に除去される。そして、この操作を終えた後に、リフトピン3で基板1を下側から持ち上げて台から外せば、基板1が跳ねたり、基板1に位置ずれが生じたりしない。   As a result, the part of the substrate 1 that is lifted from the base 2 is continuously performed around the circle of the circumferential groove 22 (a circle centered on the center point of the substrate surface). This operation is performed after the grounded lift pins 3 are in contact with the substrate 1 as shown in FIG. 1, so that the static electricity remaining on the substrate 1 can be ensured over the entire circumferential direction. Removed. And after finishing this operation, if the board | substrate 1 is lifted from the lower side with the lift pin 3, and it removes from a base, the board | substrate 1 will not jump or a position shift will not arise in the board | substrate 1. FIG.

なお、この実施形態では、リング4を円周溝22の円に沿って等間隔で配置した8本のピン5で昇降させているが、円周溝22の円に沿って配置したボールによりリング4を昇降させてもよい。
また、基板昇降部材としてリング4を用い、リング4を入れる円周溝22を台2に設けた静電チャックを用いて本発明の方法を実施しているが、本発明の実施できる静電チャックはこれに限定されない。例えば、複数個のリフトピンを、基板面の中心点を中心とした円に沿って、且つ、通常より基板の周縁部側に配置した静電チャックを用いて、本発明の方法を実施することもできる。
In this embodiment, the ring 4 is moved up and down by eight pins 5 arranged at equal intervals along the circle of the circumferential groove 22, but the ring is formed by the balls arranged along the circle of the circumferential groove 22. 4 may be raised and lowered.
In addition, the method of the present invention is carried out using an electrostatic chuck in which the ring 4 is used as the substrate elevating member and the circumferential groove 22 into which the ring 4 is inserted is provided in the table 2. Is not limited to this. For example, the method of the present invention may be carried out by using an electrostatic chuck in which a plurality of lift pins are arranged along a circle centered on the center point of the substrate surface and more usually on the peripheral edge side of the substrate. it can.

実施形態の静電チャックを示す平面図(a)と断面図(b)。The top view (a) and sectional drawing (b) which show the electrostatic chuck of embodiment. 基板の1カ所を台から浮き上がらせた状態を示す断面図。Sectional drawing which shows the state which raised one place of the board | substrate from the stand.

符号の説明Explanation of symbols

1…ウエハ(基板)、2…台、21…貫通穴、22…円周溝、23…貫通穴、3…リフトピン、4…リング(基板昇降部材)、5…ピン(駆動装置)。   DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate), 2 ... Stand, 21 ... Through-hole, 22 ... Circumferential groove, 23 ... Through-hole, 3 ... Lift pin, 4 ... Ring (substrate raising / lowering member), 5 ... Pin (drive device).

Claims (4)

静電気で基板を吸着保持する台と、吸着保持解除後の基板を下側から持ち上げて台から外すリフトピンを備えた静電チャックで、吸着保持解除後に前記台上の基板に残存する静電気を除去する方法であって、
前記基板の一カ所を前記台から浮き上がらせることを、基板面の中心点を中心とした円に沿って一周以上連続的に行うことを特徴とする静電チャックの残存静電気除去方法。
The electrostatic chuck with a base that holds the substrate by electrostatic suction and a lift pin that lifts the substrate after the suction holding release from the lower side and removes it from the base, removes the static electricity remaining on the substrate on the base after releasing the suction holding. A method,
A method for removing residual static electricity from an electrostatic chuck, comprising: continuously raising one portion of the substrate from the table along a circle centering on a central point of the substrate surface.
静電気で基板を吸着保持する台と、吸着保持解除後の基板を下側から持ち上げて台から外すリフトピンと、前記基板の一カ所を、基板面の中心点を中心とした円に沿って連続的に前記台から浮き上がらせる残存静電気除去機構と、を備えたことを特徴とする静電チャック。   A base for attracting and holding the substrate with static electricity, a lift pin for lifting the substrate after the suction and holding release from the lower side to remove it from the base, and one place of the substrate continuously along a circle centering on the center point of the substrate surface And a residual static electricity removing mechanism that floats from the table. 前記残存静電気除去機構は、前記台の上面の基板の周縁部が配置される位置に設けた円周溝と、この円周溝の円に沿って配置した基板昇降部材と、この基板昇降部材を前記円に沿って連続的に上昇させる駆動装置と、からなる請求項2記載の静電チャック。   The residual static electricity removing mechanism includes a circumferential groove provided at a position where the peripheral portion of the substrate on the upper surface of the table is disposed, a substrate lifting member disposed along a circle of the circumferential groove, and the substrate lifting member. The electrostatic chuck according to claim 2, comprising: a drive device that continuously raises along the circle. 前記基板昇降部材は前記円周溝に入るリングである請求項3記載の静電チャック。   The electrostatic chuck according to claim 3, wherein the substrate elevating member is a ring that enters the circumferential groove.
JP2007042972A 2007-02-22 2007-02-22 Method for discharging remaining static electricity of electrostatic chuck, and electrostic chuck Withdrawn JP2008205407A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007042972A JP2008205407A (en) 2007-02-22 2007-02-22 Method for discharging remaining static electricity of electrostatic chuck, and electrostic chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007042972A JP2008205407A (en) 2007-02-22 2007-02-22 Method for discharging remaining static electricity of electrostatic chuck, and electrostic chuck

Publications (1)

Publication Number Publication Date
JP2008205407A true JP2008205407A (en) 2008-09-04

Family

ID=39782541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007042972A Withdrawn JP2008205407A (en) 2007-02-22 2007-02-22 Method for discharging remaining static electricity of electrostatic chuck, and electrostic chuck

Country Status (1)

Country Link
JP (1) JP2008205407A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104157547A (en) * 2014-08-26 2014-11-19 上海先进半导体制造股份有限公司 Electrostatic discharge method for deep trench etching equipment
WO2023231378A1 (en) * 2022-05-30 2023-12-07 江苏鲁汶仪器股份有限公司 Wafer lifting mechanism and method of using same, and wafer stage device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456749A (en) * 1990-06-22 1992-02-24 Hitachi Metals Ltd Die for casting or apparatus to be brought into contact with molten metal excellent in erosion resistance

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456749A (en) * 1990-06-22 1992-02-24 Hitachi Metals Ltd Die for casting or apparatus to be brought into contact with molten metal excellent in erosion resistance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104157547A (en) * 2014-08-26 2014-11-19 上海先进半导体制造股份有限公司 Electrostatic discharge method for deep trench etching equipment
WO2023231378A1 (en) * 2022-05-30 2023-12-07 江苏鲁汶仪器股份有限公司 Wafer lifting mechanism and method of using same, and wafer stage device

Similar Documents

Publication Publication Date Title
KR102389767B1 (en) Substrate processing apparatus
JP6400977B2 (en) Spin processing device
JP5036614B2 (en) Substrate stage
JPH09148419A (en) Electrostatic chuck
JP2009295751A (en) Substrate holding mechanism, and substrate holding method
JP6746471B2 (en) Substrate processing equipment
JP5973299B2 (en) Substrate processing equipment
JP2006303138A (en) Apparatus and method for manufacturing semiconductor device
JP2014067780A (en) Substrate processing apparatus
JP2006216583A (en) Static electricity eliminating method and substrate processing apparatus
JP3608121B2 (en) Mechanical desorption mechanism of substrate and desorption method using the mechanism
JP2008041969A (en) Removal method of substrate
JP2008205407A (en) Method for discharging remaining static electricity of electrostatic chuck, and electrostic chuck
JP6294121B2 (en) Substrate processing equipment
JP2685006B2 (en) Dry etching equipment
KR20180112489A (en) Substrate supporting member and method of de-chucking substrate thereof
KR20180069383A (en) Vacuum chuck
JP5214421B2 (en) Peeling apparatus and peeling method
KR20210021558A (en) Substrate Lifting Device and Substrate Transfer Method
JP6230941B2 (en) Substrate processing equipment
KR102139020B1 (en) Substrate processing apparatus and substrate processing method
KR101403850B1 (en) System for holding large scale substrate
JPH11243137A (en) Electrostatic chuck
KR20090048202A (en) Apparatus for chucking a substrate and method of chucking the substrate
KR101221034B1 (en) Substrate chuck and apparatus for processing substrate using the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090805

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100930

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110927

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20111116